公开(公告)号：US20190096680A1

公开(公告)日：2019-03-28

申请号：US15824474

申请日：2017-11-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsiao-Kuan WEI ,  Hsien-Ming LEE ,  Chin-You HSU ,  Hsin-Yun HSU ,  Pin-Hsuan YEH

IPC: H01L21/28 ,  H01L29/40 ,  H01L21/285 ,  H01L29/49 ,  H01L21/3213 ,  H01L29/51

Abstract: Generally, the present disclosure provides example embodiments relating to formation of a gate structure of a device, such as in a replacement gate process, and the device formed thereby. In an example method, a gate dielectric layer is formed over an active area on a substrate. A dummy layer that contains a passivating species (such as fluorine) is formed over the gate dielectric layer. A thermal process is performed to drive the passivating species from the dummy layer into the gate dielectric layer. The dummy layer is removed. A metal gate electrode is formed over the gate dielectric layer. The gate dielectric layer includes the passivating species before the metal gate electrode is formed.