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公开(公告)号:US10930527B2
公开(公告)日:2021-02-23
申请号:US16899803
申请日:2020-06-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Jian-Lun Lo , Jih-Churng Twu , Feng-Yu Chen , Yuan-Hsiao Su , Yi-Chi Huang , Yueh-Ting Yang , Shu-Han Chao
Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers in a furnace. The furnace includes a first end thermal zone, a middle thermal zone and a second end thermal zone arranged in sequence. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. The method also includes supplying a purging gas into the furnace after the formation of the thin film. In addition, the method includes controlling the temperature of the furnace in a second thermal mode during the supply of the purging gas. The temperature distributions of the furnace are different in the first and second thermal modes.
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公开(公告)号:US10741426B2
公开(公告)日:2020-08-11
申请号:US15906152
申请日:2018-02-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Jian-Lun Lo , Jih-Churng Twu , Feng-Yu Chen , Yuan-Hsiao Su , Yi-Chi Huang , Yueh-Ting Yang , Shu-Han Chao
Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. In the first thermal mode, a first end thermal zone, a middle thermal zone and a second end thermal zone of the furnace which are arranged in sequence have a gradually increasing temperature. The method also includes controlling the temperature of the furnace in a second thermal mode after the formation of the thin film. In the second thermal mode, the first end thermal zone, the middle thermal zone and the second end thermal zone of the furnace have a gradually decreasing temperature.
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