公开(公告)号：US10930527B2

公开(公告)日：2021-02-23

申请号：US16899803

申请日：2020-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Lun Lo ,  Jih-Churng Twu ,  Feng-Yu Chen ,  Yuan-Hsiao Su ,  Yi-Chi Huang ,  Yueh-Ting Yang ,  Shu-Han Chao

IPC: H01L21/67 ,  C23C16/52 ,  C23C16/46 ,  H01L21/02

Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers in a furnace. The furnace includes a first end thermal zone, a middle thermal zone and a second end thermal zone arranged in sequence. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. The method also includes supplying a purging gas into the furnace after the formation of the thin film. In addition, the method includes controlling the temperature of the furnace in a second thermal mode during the supply of the purging gas. The temperature distributions of the furnace are different in the first and second thermal modes.

公开(公告)号：US11133207B2

公开(公告)日：2021-09-28

申请号：US16419581

申请日：2019-05-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wen-Bin Yang ,  Feng-Yu Chen ,  Jian-Lun Lo

IPC: C23C16/458 ,  H01L21/673 ,  H01L21/67

Abstract: A method for forming a film is provided. The method includes sequentially placing a first wafer, a second wafer, and a third wafer in a chamber. The first wafer is separated from the second wafer by a first distance, the second wafer is separated from the third wafer by a second distance, and the first distance is smaller than the second distance. At least one process gas is introduced sequentially passing through the first wafer, the second wafer and the third wafer in the chamber.

公开(公告)号：US11804392B2

公开(公告)日：2023-10-31

申请号：US17568611

申请日：2022-01-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hom-Chung Lin ,  Chi-Ying Chang ,  Jih-Churng Twu ,  Chin-Yun Chen ,  Yi-Ting Chang ,  Feng-Yu Chen

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67259 ,  H01L21/67763

Abstract: A method includes transferring a tool monitoring device to a load port of a tool. An environmental parameter of the load port is monitored by the tool monitoring device. The tool monitoring device is removed from the load port after the environmental parameter of the load port is monitored. A door of the tool in front of the load port is closed. The door of the tool is kept closed during a period from a time of transferring the tool monitoring device to the load port to a time of removing the tool monitoring device from the load port.

公开(公告)号：US11239099B2

公开(公告)日：2022-02-01

申请号：US16539708

申请日：2019-08-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hom-Chung Lin ,  Chi-Ying Chang ,  Jih-Churng Twu ,  Chin-Yun Chen ,  Yi-Ting Chang ,  Feng-Yu Chen

IPC: H01L21/67 ,  H01L21/677

Abstract: In some embodiments, a system for monitoring a tool is provided. The system includes a tool monitoring device, a transporting system and an external apparatus. The tool monitoring device is configured to monitor an environmental parameter of a load port of a tool. The tool monitoring device includes a wafer pod and a monitoring module disposed in the wafer pod. The monitoring module includes at least one sensor, a computer coupled to the at least one sensor, a power supply electrically coupled to the at least one sensor and the computer, and a wireless unit coupled to the computer. The transporting system is configured to transfer the tool monitoring device from one load port to another load port. The external apparatus is coupled to the tool monitoring device.

公开(公告)号：US10741426B2

公开(公告)日：2020-08-11

申请号：US15906152

申请日：2018-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Lun Lo ,  Jih-Churng Twu ,  Feng-Yu Chen ,  Yuan-Hsiao Su ,  Yi-Chi Huang ,  Yueh-Ting Yang ,  Shu-Han Chao

IPC: H01L21/67 ,  C23C16/52 ,  C23C16/44 ,  H01L21/02

Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. In the first thermal mode, a first end thermal zone, a middle thermal zone and a second end thermal zone of the furnace which are arranged in sequence have a gradually increasing temperature. The method also includes controlling the temperature of the furnace in a second thermal mode after the formation of the thin film. In the second thermal mode, the first end thermal zone, the middle thermal zone and the second end thermal zone of the furnace have a gradually decreasing temperature.