公开(公告)号：US10930527B2

公开(公告)日：2021-02-23

申请号：US16899803

申请日：2020-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Lun Lo ,  Jih-Churng Twu ,  Feng-Yu Chen ,  Yuan-Hsiao Su ,  Yi-Chi Huang ,  Yueh-Ting Yang ,  Shu-Han Chao

IPC: H01L21/67 ,  C23C16/52 ,  C23C16/46 ,  H01L21/02

Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers in a furnace. The furnace includes a first end thermal zone, a middle thermal zone and a second end thermal zone arranged in sequence. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. The method also includes supplying a purging gas into the furnace after the formation of the thin film. In addition, the method includes controlling the temperature of the furnace in a second thermal mode during the supply of the purging gas. The temperature distributions of the furnace are different in the first and second thermal modes.

公开(公告)号：US11133207B2

公开(公告)日：2021-09-28

申请号：US16419581

申请日：2019-05-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wen-Bin Yang ,  Feng-Yu Chen ,  Jian-Lun Lo

IPC: C23C16/458 ,  H01L21/673 ,  H01L21/67

Abstract: A method for forming a film is provided. The method includes sequentially placing a first wafer, a second wafer, and a third wafer in a chamber. The first wafer is separated from the second wafer by a first distance, the second wafer is separated from the third wafer by a second distance, and the first distance is smaller than the second distance. At least one process gas is introduced sequentially passing through the first wafer, the second wafer and the third wafer in the chamber.

公开(公告)号：US10741426B2

公开(公告)日：2020-08-11

申请号：US15906152

申请日：2018-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Lun Lo ,  Jih-Churng Twu ,  Feng-Yu Chen ,  Yuan-Hsiao Su ,  Yi-Chi Huang ,  Yueh-Ting Yang ,  Shu-Han Chao

IPC: H01L21/67 ,  C23C16/52 ,  C23C16/44 ,  H01L21/02

Abstract: A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. In the first thermal mode, a first end thermal zone, a middle thermal zone and a second end thermal zone of the furnace which are arranged in sequence have a gradually increasing temperature. The method also includes controlling the temperature of the furnace in a second thermal mode after the formation of the thin film. In the second thermal mode, the first end thermal zone, the middle thermal zone and the second end thermal zone of the furnace have a gradually decreasing temperature.