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    Method of manufacturing semiconductor devices and semiconductor devices
    1.
    发明授权
    Method of manufacturing semiconductor devices and semiconductor devices 有权

    公开(公告)号：US11069791B2

    公开(公告)日：2021-07-20

    申请号：US16601721

    申请日：2019-10-15

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Cheng-Yi Peng ,  Wen-Yuan Chen ,  Wen-Hsing Hsieh ,  Yi-Ju Hsu ,  Jon-Hsu Ho ,  Song-Bor Lee ,  Bor-Zen Tien

    IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/02

    Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

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