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1.发明授权
公开(公告)号：US5234642A
公开(公告)日：1993-08-10
申请号：US459398
申请日：1989-12-29
申请人： Takao Nishioka , Akira Kuibira , Kenji Matsunuma , Yoshishige Takano , Matsuo Higuchi , Masaaki Honda , Masaya Miyake
发明人： Takao Nishioka , Akira Kuibira , Kenji Matsunuma , Yoshishige Takano , Matsuo Higuchi , Masaaki Honda , Masaya Miyake
IPC分类号： C04B35/597
CPC分类号： C04B35/597
摘要： A high-strength silicon nitride sintered body having a flexural strength of 100 kg/mm.sup.2 or higher and a process for producing the same are disclosed, the sintered body comprising not less than 90% by weight of a single crystalline phase of silicon aluminum oxynitride (Si.sub.6-z Al.sub.2 O.sub.z N.sub.8-z, wherein z is a number of from 0 to 4.2) having an average longer diameter of not more than 5 .mu.m and an aspect ratio of not less than 5, the crystal phase constituting a network structure in the sintered body, the balance being a crystalline or amorphous (glassy) phase comprising one or more of oxides or oxynitrides of a rare earth metal, a group 3A metal, a group 2A metal or Si, and the process comprising mixing silicon nitride powder, an organic metal salt as a first sintering aid, and at least one of a metal oxide, a metal nitride, and a metal oxynitride as a second sintering aid, either separately or as a mixture of two or more thereof, with a solvent and a surface active agent, subjecting the mixture or mixtures to ultrasonic dispersion, mixing the mixtures together followed by drying to obtain a mixed powder, molding the mixed powder, and sintering the molded article at a temperature of from 1,600.degree. to 2,200.degree. C. in a non-oxidative atmosphere.
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2.发明授权
公开(公告)号：US5328876A
公开(公告)日：1994-07-12
申请号：US995703
申请日：1992-12-23
申请人： Takao Nishioka , Akira Kuibira , Kenji Matsunuma , Yoshishige Takano , Matsuo Higuchi , Masaaki Honda , Masaya Miyake
发明人： Takao Nishioka , Akira Kuibira , Kenji Matsunuma , Yoshishige Takano , Matsuo Higuchi , Masaaki Honda , Masaya Miyake
IPC分类号： C04B35/597 , C04B35/58
CPC分类号： C04B35/597
摘要： A high-strength silicon nitride sintered body having a flexural strength of 100 kg/mm.sup.2 or higher and a process for producing the same are disclosed, the sintered body comprising not less than 90% by weight of a single crystalline phase of silicon aluminum oxynitride (Si.sub.6-z Al.sub.2 O.sub.z N.sub.8-z, wherein z is a number of from 0 to 4.2) having an average longer diameter of not more than 5 .mu.m and an aspect ratio of not less than 5, the crystal phase constituting a network structure in the sintered body, the balance being a crystalline or amorphous (glassy) phase comprising one or more of oxides or oxynitrides of a rare earth metal, a group 3A metal, a group 2A metal or Si, and the process comprising mixing silicon nitride powder, an organic metal salt as a first sintering aid, and at least one of a metal oxide, a metal nitride, and a metal oxynitride as a second sintering aid, either separately or as a mixture of two or more thereof, with a solvent and a surface active agent, subjecting the mixture or mixtures to ultrasonic dispersion, mixing the mixtures together followed by drying to obtain a mixed powder, molding the mixed powder, and sintering the molded article at a temperature of from 1,600.degree. C. to 2,200.degree. C. in a non-oxidative atmosphere.
摘要翻译： 公开了一种弯曲强度为100kg / mm 2以上的高强度氮化硅烧结体及其制造方法，所述烧结体包含不小于90重量％的氮化硅铝的单晶相（ Si6-zAl2OzN8-z，其中z为0-4.2的数），平均长度不大于5μm，纵横比不小于5，构成烧结体网状结构的晶相 余量为包含稀土金属，3A族金属，2A族金属或Si族的氧化物或氮氧化物中的一种或多种的结晶或无定形（玻璃质）相，并且该方法包括将氮化硅粉末，有机金属 盐作为第一烧结助剂，以及作为第二烧结助剂的金属氧化物，金属氮化物和金属氮氧化物中的至少一种，分别地或作为其两种或多种的混合物与溶剂和表面活性剂 对混合物进行处理 或与超声分散体的混合物，将混合物混合在一起，然后干燥以获得混合粉末，模塑混合粉末，并在非氧化性气氛中在1600℃至2200℃的温度下烧结该模制品。
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公开(公告)号：US07491432B2
公开(公告)日：2009-02-17
申请号：US10605764
申请日：2003-10-24
申请人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
发明人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
IPC分类号： B32B9/00
CPC分类号： H01L21/67103 , C23C16/4581 , C23C16/4586 , H01L21/68735 , H05B3/143 , Y10T428/131
摘要： For semiconductor manufacturing equipment, a ceramic susceptor that without occurrence of cracking in the course of heating wafers suppresses thermal radiation from the circumferential surface of a wafer placed on the ceramic susceptor, to heighten isothermal quality in the wafer face. A semiconductor-manufacturing-equipment ceramic susceptor (1) including a resistive heating element (3) in the face or interior of ceramic substrates (2a, 2b) has a wafer pocket (5) consisting of a recess that can accommodatingly carry a wafer. The angle that the perimetric inside surface and the bottom face of the wafer pocket (5) form is over 90° and 170° or less, and/or the curvature of the bottom-portion circumferential rim where the perimetric inside surface and the bottom face of the pocket join is 0.1 mm or more. A plasma electrode furthermore may be disposed in the face or interior of the ceramic substrates (2a, 2b) of the ceramic susceptor (1).
摘要翻译： 对于半导体制造设备，在加热晶片的过程中不发生开裂的陶瓷基座抑制来自放置在陶瓷基座上的晶片的圆周表面的热辐射，以提高晶片表面的等温质量。 在陶瓷基板（2a，2b）的表面或内部包括电阻加热元件（3）的半导体制造设备陶瓷基座（1）具有由可以容纳地携带晶片的凹部构成的晶片槽（5）。 晶片槽（5）的周边内表面和底面形成的角度超过90°和170°或更小，和/或底部周缘的曲率，其中周边内表面和底面 的口袋连接为0.1mm以上。 此外，等离子体电极可以设置在陶瓷基座（1）的陶瓷基板（2a，2b）的表面或内部。
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公开(公告)号：US07361230B2
公开(公告)日：2008-04-22
申请号：US10119955
申请日：2002-04-09
CPC分类号： H01L21/67103 , C23C16/4581 , C23C16/4586 , H01L21/68714 , Y10T279/23
摘要： In the substrate processing apparatus, a ceramic module for mounting a substrate has a flat plate portion having an electric circuitry and a ceramic base body, and as at least a part of a surface of the flat plate portion other than the surface mounting the substrate is in contact with a chamber, it is supported by the chamber. Thus, a substrate processing apparatus can be provided which improves thermal uniformity, reduces cost, is suitable for size reduction of the apparatus and which can ease restrictions in mounting a power supply conductive member or the like.
摘要翻译： 在基板处理装置中，用于安装基板的陶瓷模块具有具有电路和陶瓷基体的平板部分，并且作为安装基板的表面以外的平板部分的至少一部分表面， 与腔室接触，它由腔室支撑。 因此，可以提供提高热均匀性，降低成本的衬底处理装置，适合于装置的尺寸减小，并且可以减轻安装电源导电构件等的限制。
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公开(公告)号：US07268322B2
公开(公告)日：2007-09-11
申请号：US11099987
申请日：2005-04-05
申请人： Akira Kuibira , Hirohiko Nakata , Kenji Shinma
发明人： Akira Kuibira , Hirohiko Nakata , Kenji Shinma
CPC分类号： H01L21/67109 , H01L21/67103
摘要： A semiconductor heating apparatus, in which, when measuring the electrical properties of multiple chips formed on a large size wafer, only one or a several chips are heated uniformly, and the other chips are on standby at a low temperature. The semiconductor heating apparatus includes a heating part for mounting and heating the workpiece, a support part which supports the heating part, and a cooling module which contacts the support part. A plurality of heating parts and supporting parts are joined together. The workpiece mounting surfaces of the plurality of heating parts are preferably constructed in the same plane. In addition, there is preferably a thermal insulating material distributed underneath the support part. The heating part is preferably a ceramic heater.
摘要翻译： 一种半导体加热装置，其中，当测量形成在大尺寸晶片上的多个芯片的电特性时，只有一个或几个芯片被均匀地加热，而另一个芯片在低温待机。 半导体加热装置包括用于安装和加热工件的加热部件，支撑加热部件的支撑部件和与支撑部件接触的冷却模块。 多个加热部和支撑部接合在一起。 多个加热部的工件安装面优选构成为同一平面。 此外，优选地，分布在支撑部分下方的绝热材料。 加热部件优选为陶瓷加热器。
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公开(公告)号：US07268321B2
公开(公告)日：2007-09-11
申请号：US10498460
申请日：2003-03-19
CPC分类号： H01L21/68757 , H01L21/67103 , H01L21/67248
摘要： A wafer holder is provided in which local heat radiation in supporting and heating wafers is kept under control and temperature uniformity of the wafer retaining surface is enhanced, and by making use of the wafer holder a semiconductor manufacturing apparatus suitable for processing larger-diameter wafers is made available. In a wafer holder (1) including within a ceramic substrate (2) a resistive heating element (3) or the like and being furnished with a lead (4) penetrating a reaction chamber (6), the lead (4) is housed in a tubular guide member (5), and an interval between the guide member (5) and the reaction chamber (6) as well as the interior of the guide member (5) are hermetically sealed. The guide member (5) and the ceramic substrate (2) are not joined together, and in the interior of the guide member (5) in which the inside is hermetically sealed, the atmosphere toward the ceramic substrate (2) is preferably substantially the same as the atmosphere in the reaction chamber (6).
摘要翻译： 提供了一种晶片保持器，其中支撑和加热晶片中的局部热辐射保持在控制之下，并且晶片保持表面的温度均匀性得到增强，并且通过利用晶片保持器，适于处理较大直径晶片的半导体制造装置为 提供。 在陶瓷基板（2）内具有电阻加热元件（3）等并配有穿过反应室（6）的引线（4）的晶片保持器（1）中，引线（4）容纳在 管状引导构件（5）以及引导构件（5）和反应室（6）之间的间隔以及引导构件（5）的内部被气密地密封。 引导构件（5）和陶瓷基板（2）不接合在一起，并且在内部被密封的引导构件（5）的内部，朝向陶瓷基板（2）的气氛优选为 与反应室（6）中的气氛相同。
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7.发明授权Ceramic joined body, substrate holding structure and substrate processing apparatus 有权陶瓷接合体，基板保持结构和基板处理装置公开(公告)号：US07211153B2
公开(公告)日：2007-05-01
申请号：US10276394
申请日：2002-04-11
CPC分类号： H01L21/6833 , B32B18/00 , B32B2309/022 , B32B2315/02 , C04B35/44 , C04B35/581 , C04B37/005 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3865 , C04B2235/96 , C04B2237/064 , C04B2237/08 , Y10T279/23
摘要： A substrate holding structure having excellent corrosion resistance and airtightness, excellent dimensional accuracy and sufficient durability when mechanical or thermal stress is applied thereto is obtained. A holder (1) serving as the substrate holding structure includes a ceramic base (2) for holding a substrate, a protective cylinder (7) joined to the ceramic base (2) and a joining layer (8) positioned therebetween for joining the ceramic base (2) and the protective cylinder (7) to each other. The joining layer (8) contains at least 2 mass % and not more than 70 mass % of a rare earth oxide, at least 10 mass % and not more than 78 mass % of aluminum oxide, and at least 2 mass % and not more than 50 mass % of aluminum nitride. The rare earth oxide or the aluminum oxide has the largest proportional content among the aforementioned three types of components in the joining layer (8).
摘要翻译： 获得具有优异的耐腐蚀性和气密性的基板保持结构，在施加机械或热应力时具有优异的尺寸精度和足够的耐久性。 用作基板保持结构的保持器（1）包括用于保持基板的陶瓷基体（2），与陶瓷基体（2）接合的保护筒（7）和位于其间的接合层（8），用于将陶瓷 基座（2）和保护筒（7）彼此连接。 接合层（8）含有2质量％以上且70质量％以下的稀土类氧化物，至少10质量％以上且78质量％以下的氧化铝，至少2质量％以上 超过50质量％的氮化铝。 在接合层（8）中，上述三种成分中的稀土氧化物或氧化铝的比例含量最大。
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公开(公告)号：US20050263516A1
公开(公告)日：2005-12-01
申请号：US11140668
申请日：2005-05-27
IPC分类号： H05B3/20 , F27B17/00 , F27D11/00 , F27D99/00 , H01L21/00 , H01L21/02 , H01L21/66 , H01L21/68 , H01L21/683 , H05B3/06 , H05B3/10 , H05B3/74
CPC分类号： F27D99/0006 , F27B17/0025 , F27D2099/0008 , H01L21/67103
摘要： The present invention provides a heating device which is rigid with little likelihood of warping. The workpiece mounting surface has a high thermal conductivity, and there is improved heat uniformity, and rapid cooling is possible. The heating device of the present invention comprises: a mounting part for mounting the workpiece; a heating part which has a resistance heating element and which heats the mounting part; and a support part which supports the mounting part and heating part. The Young's modulus for each of the mounting part and support part is 100 GPa or greater. By having a Young's modulus of 100 GPa or greater, even if the mounting part is thin, there is little deformation when pressed by a probe card.
摘要翻译： 本发明提供一种加热装置，该加热装置具有几乎不变形的刚性。 工件安装面具有高导热性，并且具有改善的热均匀性，并且可以进行快速冷却。 本发明的加热装置包括：用于安装工件的安装部件; 加热部，其具有电阻加热元件，并加热所述安装部; 以及支撑安装部和加热部的支撑部。 每个安装部分和支撑部分的杨氏模量为100GPa或更大。 通过具有100GPa以上的杨氏模量，即使安装部分较薄，当由探针卡按压时几乎没有变形。
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公开(公告)号：US06946625B2
公开(公告)日：2005-09-20
申请号：US10711064
申请日：2004-08-20
CPC分类号： H01L21/67103 , H05B3/143 , H05B3/265
摘要： Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is formed. Fluctuation in pullback length L between sintered ceramic body outer-peripheral edge 1a and resistive heating element substantive-domain outer-peripheral edge 2a is within ±0.8%, while isothermal rating of the entire surface of the wafer-retaining face is ±1.0% or less. Preferable is a superior isothermal rating of ±0.5% or less that can be achieved by bringing the fluctuation in pullback length L to within ±0.5%.
摘要翻译： 其晶片保持面具有优异的等温性能，适用于半导体制造装置和液晶制造装置的陶瓷基座。 在板状烧结陶瓷体1中，形成电阻加热元件2。 烧结陶瓷体外周边缘1a和电阻加热元件本体外缘边缘2a之间的回拉长度L的波动在±0.8％以内，而晶片保持面的整个表面的等温额定值为±1.0 ％ 或更少。 优选的等温额定值为±0.5％以下，通过使拉回长度L的波动在±0.5％以内可以实现。
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10.发明授权公开(公告)号：US06664515B2
公开(公告)日：2003-12-16
申请号：US10119778
申请日：2002-04-11
IPC分类号： H05B368
CPC分类号： H01L21/67103 , H05B3/143 , H05B3/283
摘要： A technology that achieves a highly uniform temperature distribution on the surface of large-area semiconductor wafers and substrates for liquid crystals without prior measurement of the resistance-heating-element circuit and subsequent adjustment of the value of resistance. At least one current-receiving point 4 and at least one current-releasing point 5 are provided at the central portion of an insulating substrate 1. One or more resistance-heating-element circuits 2 are embedded in the insulating substrate spirally or pseudospirally from the central portion including the current-receiving point 4 to the peripheral portion of the insulating substrate 1. All the circuits merge with one another at the outermost portion. One or more resistance-heating-element circuits are separated at the outermost portion of the resistance-heating-element circuits and are formed spirally or pseudospirally from the outermost portion to the central portion including the current-releasing point 5.
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