公开(公告)号：US07372675B2

公开(公告)日：2008-05-13

申请号：US11253757

申请日：2005-10-20

申请人： Satoshi Miura ,  Takumi Uesugi ,  Norio Takahashi

发明人： Satoshi Miura ,  Takumi Uesugi ,  Norio Takahashi

IPC分类号： G11B5/39

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/06 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3272 ,  H01L43/08

摘要： An MR element comprises: a tunnel barrier layer having two surfaces that face toward opposite directions; a free layer disposed adjacent to one of the surfaces of the tunnel barrier layer and having a direction of magnetization that changes in response to an external magnetic field; and a pinned layer that is a ferromagnetic layer disposed adjacent to the other of the surfaces of the tunnel barrier layer and having a fixed direction of magnetization. The free layer incorporates: a first soft magnetic layer disposed adjacent to the one of the surfaces of the tunnel barrier layer; a high polarization layer disposed such that the first soft magnetic layer is sandwiched between the tunnel barrier layer and the high polarization layer; and a second soft magnetic layer disposed such that the high polarization layer is sandwiched between the first and second soft magnetic layers.

摘要翻译： MR元件包括：具有面向相反方向的两个表面的隧道势垒层; 邻近隧道势垒层的一个表面设置并具有响应于外部磁场而变化的磁化方向的自由层; 以及钉扎层，其是与隧道势垒层的另一个表面相邻设置并具有固定的磁化方向的铁磁层。 自由层包括：邻近隧道势垒层的一个表面设置的第一软磁层; 设置为使得第一软磁层夹在隧道势垒层和高偏振层之间的高偏振层; 以及设置成使得高偏振层夹在第一和第二软磁性层之间的第二软磁层。

公开(公告)号：US20080037184A1

公开(公告)日：2008-02-14

申请号：US11806823

申请日：2007-06-04

申请人： Takumi Uesugi ,  Satoshi Miura

发明人： Takumi Uesugi ,  Satoshi Miura

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/16 ,  H01F10/3272 ,  H01L43/08

摘要： An exchange-coupling film incorporates an antiferromagnetic layer and a pinned layer. The pinned layer includes a first ferromagnetic layer, a second ferromagnetic layer, a third ferromagnetic layer, a nonmagnetic middle layer, and a fourth ferromagnetic layer that are disposed in this order, the first ferromagnetic layer being closest to the antiferromagnetic layer. The first ferromagnetic layer is made of a ferromagnetic material and has a face-centered cubic structure. The second ferromagnetic layer is made of only iron or an alloy containing x atomic % cobalt and (100−x) atomic % iron, wherein x is greater than zero and smaller than or equal to 60. The third ferromagnetic layer is made of an alloy containing y atomic % cobalt and (100−y) atomic % iron, wherein y is within a range of 65 to 80 inclusive. The antiferromagnetic layer and the first ferromagnetic layer are exchange-coupled to each other. The third and fourth ferromagnetic layers are antiferromagnetically coupled to each other.

摘要翻译： 交换耦合膜包含反铁磁层和钉扎层。 被钉扎层包括第一铁磁层，第二铁磁层，第三铁磁层，非磁性中间层和第四铁磁层，第一铁磁层最靠近反铁磁层。 第一铁磁层由铁磁材料制成并具有面心立方结构。 第二铁磁层仅由铁或含有x原子％钴和（100-x）原子％铁的合金制成，其中x大于零且小于或等于60.第三铁磁层由合金 含有原子％钴和（100-y）原子％铁，其中y在65〜80的范围内。 反铁磁层和第一铁磁层彼此交换耦合。 第三和第四铁磁层彼此反铁磁耦合。

公开(公告)号：US07241514B2

公开(公告)日：2007-07-10

申请号：US10880574

申请日：2004-07-01

申请人： Takeo Kagami ,  Takumi Uesugi ,  Satoshi Miura ,  Norio Takahashi

发明人： Takeo Kagami ,  Takumi Uesugi ,  Satoshi Miura ,  Norio Takahashi

IPC分类号： G11B5/39 ,  G11B5/27

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1164 ,  Y10T428/256

摘要： A magneto-resistive device is provided for contributing to a higher MR ratio and a reduced cleaning time for cleaning the surface of a cap layer. In the magneto-resistive device, a cap layer which serves as a protection layer is formed on a free layer which is the topmost layer of a magneto-resistive layer constituting a TMR devise. An upper electrode which is additionally used as an upper magnetic shield is electrically connected to the free layer through an upper metal layer. The cap layer comprised of a two-layer film made up of a conductive layer closer to the free layer and a topmost conductive layer. The conductive layer closer to the free layer is made of a material having higher oxygen bond energy than Ru, such as Zr, Hf, or the like. The topmost conductive layer is made of a material having lower oxygen bond energy, such as a noble metal or the like.

摘要翻译： 提供了一种磁阻装置，用于有助于更高的MR比和减少的清洁时间以清洁盖层的表面。 在磁阻装置中，作为保护层的盖层形成在作为构成TMR装置的磁阻层的最上层的自由层上。 另外用作上磁屏蔽的上电极通过上金属层电连接到自由层。 盖层由由更靠近自由层的导电层构成的双层膜和最上面的导电层组成。 更靠近自由层的导电层由诸如Zr，Hf等的比Ru更高的氧键能的材料制成。 最上面的导电层由具有较低氧键能的材料制成，例如贵金属等。

公开(公告)号：US20070264728A1

公开(公告)日：2007-11-15

申请号：US11797635

申请日：2007-05-04

申请人： Satoshi Miura ,  Takumi Uesugi

发明人： Satoshi Miura ,  Takumi Uesugi

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  G11C11/16 ,  H01F10/3254 ,  H01F41/307

摘要： A manufacturing method of a TMR element having a magnetization fixed layer, a magnetization free layer and a tunnel barrier layer sandwiched between the magnetization fixed layer and the magnetization free layer. A fabricating process of the tunnel barrier layer includes a step of depositing a first metallic material film on the magnetization fixed layer or the magnetization free layer, and a step of oxidizing the deposited first metallic material film under an environment with an impurity concentration of 1E-02 or less.

摘要翻译： 具有磁化固定层，磁化自由层和夹在磁化固定层和磁化自由层之间的隧道势垒层的TMR元件的制造方法。 隧道势垒层的制造工艺包括在磁化固定层或磁化自由层上沉积第一金属材料膜的步骤，以及在杂质浓度为1E-的环境下氧化沉积的第一金属材料膜的步骤， 02以下。

公开(公告)号：US20060092579A1

公开(公告)日：2006-05-04

申请号：US11253757

申请日：2005-10-20

申请人： Satoshi Miura ,  Takumi Uesugi ,  Norio Takahashi

发明人： Satoshi Miura ,  Takumi Uesugi ,  Norio Takahashi

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/06 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3272 ,  H01L43/08

摘要： An MR element comprises: a tunnel barrier layer having two surfaces that face toward opposite directions; a free layer disposed adjacent to one of the surfaces of the tunnel barrier layer and having a direction of magnetization that changes in response to an external magnetic field; and a pinned layer that is a ferromagnetic layer disposed adjacent to the other of the surfaces of the tunnel barrier layer and having a fixed direction of magnetization. The free layer incorporates: a first soft magnetic layer disposed adjacent to the one of the surfaces of the tunnel barrier layer; a high polarization layer disposed such that the first soft magnetic layer is sandwiched between the tunnel barrier layer and the high polarization layer; and a second soft magnetic layer disposed such that the high polarization layer is sandwiched between the first and second soft magnetic layers.

摘要翻译： MR元件包括：具有面向相反方向的两个表面的隧道势垒层; 邻近隧道势垒层的一个表面设置并具有响应于外部磁场而变化的磁化方向的自由层; 以及钉扎层，其是与隧道势垒层的另一个表面相邻设置并具有固定的磁化方向的铁磁层。 自由层包括：邻近隧道势垒层的一个表面设置的第一软磁层; 设置为使得第一软磁层夹在隧道势垒层和高偏振层之间的高偏振层; 以及设置成使得高偏振层夹在第一和第二软磁性层之间的第二软磁层。

公开(公告)号：US07660082B2

公开(公告)日：2010-02-09

申请号：US11500379

申请日：2006-08-08

申请人： Takumi Uesugi ,  Satoshi Miura ,  Takeo Kagami

发明人： Takumi Uesugi ,  Satoshi Miura ,  Takeo Kagami

IPC分类号： G11B5/39 ,  G11C11/14

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11C11/16 ,  H01F10/3254 ,  H01F41/307 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

摘要： A magneto-resistive element has a lower layer, a tunnel barrier layer, and an upper layer. The lower layer, the tunnel barrier layer, and the upper layer are disposed adjacent to each other and are stacked in this order. A magnetization direction of either of the lower layer and the upper layer is fixed relative to an external magnetic field, and a magnetization direction of the other layer is variable in accordance with the external magnetic field. A crystalline portion and a non-crystalline portion co-exist in a plane that is parallel with a surface of the tunnel barrier layer.

摘要翻译： 磁阻元件具有下层，隧道势垒层和上层。 下层，隧道势垒层和上层相邻配置并依次层叠。 下层和上层之一的磁化方向相对于外部磁场固定，另一层的磁化方向根据外部磁场而变化。 结晶部分和非结晶部分共存于与隧道势垒层的表面平行的平面中。

公开(公告)号：US20080218915A1

公开(公告)日：2008-09-11

申请号：US11681937

申请日：2007-03-05

申请人： Takumi Uesugi ,  Satoshi Miura ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

发明人： Takumi Uesugi ,  Satoshi Miura ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906

摘要： Provided is a TMR effect element having no special structures needing much man-hour cost for the formation, in which the high temperature noise and the low temperature noise are suppressed and a sufficiently high resistance-change ratio is provided. The TMR effect element comprises: a tunnel barrier layer formed by oxidizing a base film; and two ferromagnetic layers stacked so as to sandwich the tunnel barrier layer, the base film having a film thickness larger than a film thickness at which a resistance-change ratio of the TMR effect element indicates a maximum value. Here, in the case that the base film is an aluminum film, the film thickness of the aluminum film is preferably in the range of 0.50 nm to 1.5 nm.

摘要翻译： 本发明提供一种TMR效应元件，其特征在于，在抑制高温噪声和低温噪声以及提供足够高的电阻变化率的情况下，不需要大量的人工成本。 TMR效应元件包括：通过氧化基膜形成的隧道势垒层; 以及层叠所述隧道势垒层的两个铁磁层，所述基膜的膜厚度大于所述TMR效应元件的电阻变化率为最大值的膜厚度。 这里，在基膜是铝膜的情况下，铝膜的膜厚优选在0.50nm〜1.5nm的范围内。

公开(公告)号：US20070053114A1

公开(公告)日：2007-03-08

申请号：US11500379

申请日：2006-08-08

申请人： Takumi Uesugi ,  Satoshi Miura ,  Takeo Kagami

发明人： Takumi Uesugi ,  Satoshi Miura ,  Takeo Kagami

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11C11/16 ,  H01F10/3254 ,  H01F41/307 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

摘要： A magneto-resistive element has a lower layer, a tunnel barrier layer, and an upper layer. The lower layer, the tunnel barrier layer, and the upper layer are disposed adjacent to each other and are stacked in this order. A magnetization direction of either of the lower layer and the upper layer is fixed relative to an external magnetic field, and a magnetization direction of the other layer is variable in accordance with the external magnetic field. A crystalline portion and a non-crystalline portion co-exist in a plane that is parallel with a surface of the tunnel barrier layer.

摘要翻译： 磁阻元件具有下层，隧道势垒层和上层。 下层，隧道势垒层和上层相邻配置并依次层叠。 下层和上层之一的磁化方向相对于外部磁场固定，另一层的磁化方向根据外部磁场而变化。 结晶部分和非结晶部分共存于与隧道势垒层的表面平行的平面中。

公开(公告)号：US20070014053A1

公开(公告)日：2007-01-18

申请号：US11476724

申请日：2006-06-29

申请人： Takumi Uesugi ,  Satoshi Miura

发明人： Takumi Uesugi ,  Satoshi Miura

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  G01R33/06 ,  G11B5/3903 ,  H01F10/132 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3281 ,  H01L43/08

摘要： A magnetic field detecting element has a lower layer, a tunnel barrier layer, and an upper layer, wherein the lower layer, the tunnel barrier layer, and the upper layer are stacked adjacent to each other in this order, wherein a magnetization direction of either the lower layer or the upper layer is fixed relative to an external magnetic field, and a magnetization direction of the other can be changed in accordance with the external magnetic field such that a magnitude of the external magnetic field is detected based on a change in resistance relative to a sense current, the change in resistance depending on the external magnetic field, wherein the lower layer comprises: a first layer that is formed in an amorphous state; and a second layer that is made of cobalt, iron, nickel or a combination thereof and that is formed in a substantially amorphous state, the second layer being adjacent to the first layer and the tunnel barrier layer on both sides.

摘要翻译： 磁场检测元件具有下层，隧道势垒层和上层，其中下层，隧道势垒层和上层依次堆叠在一起，其中两者之一的磁化方向 下层或上层相对于外部磁场固定，并且可以根据外部磁场改变另一个的磁化方向，使得基于电阻的变化来检测外部磁场的大小 相对于感测电流，根据外部磁场的电阻变化，其中所述下层包括：形成为非晶态的第一层; 以及由钴，铁，镍或其组合制成的第二层，其形成为基本非晶态，所述第二层与所述第一层相邻，并且所述隧道势垒层位于两侧。

公开(公告)号：US07782576B2

公开(公告)日：2010-08-24

申请号：US11806823

申请日：2007-06-04

申请人： Takumi Uesugi ,  Satoshi Miura

发明人： Takumi Uesugi ,  Satoshi Miura

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/16 ,  H01F10/3272 ,  H01L43/08

摘要： An exchange-coupling film incorporates an antiferromagnetic layer and a pinned layer. The pinned layer includes a first ferromagnetic layer, a second ferromagnetic layer, a third ferromagnetic layer, a nonmagnetic middle layer, and a fourth ferromagnetic layer that are disposed in this order, the first ferromagnetic layer being closest to the antiferromagnetic layer. The first ferromagnetic layer is made of a ferromagnetic material and has a face-centered cubic structure. The second ferromagnetic layer is made of only iron or an alloy containing x atomic % cobalt and (100−x) atomic % iron, wherein x is greater than zero and smaller than or equal to 60. The third ferromagnetic layer is made of an alloy containing y atomic % cobalt and (100−y) atomic % iron, wherein y is within a range of 65 to 80 inclusive. The antiferromagnetic layer and the first ferromagnetic layer are exchange-coupled to each other. The third and fourth ferromagnetic layers are antiferromagnetically coupled to each other.

摘要翻译： 交换耦合膜包含反铁磁层和钉扎层。 被钉扎层包括第一铁磁层，第二铁磁层，第三铁磁层，非磁性中间层和第四铁磁层，第一铁磁层最靠近反铁磁层。 第一铁磁层由铁磁材料制成并具有面心立方结构。 第二铁磁层仅由铁或含有x原子％钴和（100-x）原子％铁的合金制成，其中x大于零且小于或等于60.第三铁磁层由合金 含有原子％钴和（100-y）原子％铁，其中y在65〜80的范围内。 反铁磁层和第一铁磁层彼此交换耦合。 第三和第四铁磁层彼此反铁磁耦合。