公开(公告)号：US20080218915A1

公开(公告)日：2008-09-11

申请号：US11681937

申请日：2007-03-05

申请人： Takumi Uesugi ,  Satoshi Miura ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

发明人： Takumi Uesugi ,  Satoshi Miura ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906

摘要： Provided is a TMR effect element having no special structures needing much man-hour cost for the formation, in which the high temperature noise and the low temperature noise are suppressed and a sufficiently high resistance-change ratio is provided. The TMR effect element comprises: a tunnel barrier layer formed by oxidizing a base film; and two ferromagnetic layers stacked so as to sandwich the tunnel barrier layer, the base film having a film thickness larger than a film thickness at which a resistance-change ratio of the TMR effect element indicates a maximum value. Here, in the case that the base film is an aluminum film, the film thickness of the aluminum film is preferably in the range of 0.50 nm to 1.5 nm.

摘要翻译： 本发明提供一种TMR效应元件，其特征在于，在抑制高温噪声和低温噪声以及提供足够高的电阻变化率的情况下，不需要大量的人工成本。 TMR效应元件包括：通过氧化基膜形成的隧道势垒层; 以及层叠所述隧道势垒层的两个铁磁层，所述基膜的膜厚度大于所述TMR效应元件的电阻变化率为最大值的膜厚度。 这里，在基膜是铝膜的情况下，铝膜的膜厚优选在0.50nm〜1.5nm的范围内。

公开(公告)号：US07864489B2

公开(公告)日：2011-01-04

申请号：US11678913

申请日：2007-02-26

申请人： Kei Hirata ,  Takeo Kagami ,  Takumi Uesugi ,  Tetsuro Sasaki

发明人： Kei Hirata ,  Takeo Kagami ,  Takumi Uesugi ,  Tetsuro Sasaki

IPC分类号： G11B5/33

CPC分类号： G11B5/3106 ,  G11B5/3929 ,  G11B5/40

摘要： Provided is a thin-film magnetic head in which a noise due to the voltage potential difference between the read head element and the protective coat surface is suppressed. The thin-film magnetic head comprises: a read head element, one end surface of the read head element reaching an head end surface on the ABS side; a protective coat formed on the head end surface in such a way to cover at least the one end surface of the read head element; and at least one antistatic means for preventing the protective coat from being electrostatically charged, formed on/above the element formation surface, one end surface of the at least one antistatic means reaching the head end surface, the protective coat covering a portion, not the whole, of the one end surface of the at least one antistatic means on the head end surface.

摘要翻译： 提供了一种薄膜磁头，其中抑制了读头元件和保护涂层表面之间的电压电位差引起的噪声。 薄膜磁头包括：读头元件，读头元件的一个端面到达ABS侧的头端面; 形成在头端表面上的保护涂层，以至少覆盖读头元件的一个端面; 以及至少一个抗静电装置，用于防止保护涂层被静电充电，形成在元件形成表面上或上方，至少一个抗静电装置的一个端面到达头端表面，保护涂层覆盖一部分，而不是 在头端表面上的至少一个抗静电装置的一个端面的整体。

公开(公告)号：US20080204938A1

公开(公告)日：2008-08-28

申请号：US11678913

申请日：2007-02-26

申请人： Kei Hirata ,  Takeo Kagami ,  Takumi Uesugi ,  Tetsuro Sasaki

发明人： Kei Hirata ,  Takeo Kagami ,  Takumi Uesugi ,  Tetsuro Sasaki

IPC分类号： G11B5/48

CPC分类号： G11B5/3106 ,  G11B5/3929 ,  G11B5/40

摘要： Provided is a thin-film magnetic head in which a noise due to the voltage potential difference between the read head element and the protective coat surface is suppressed. The thin-film magnetic head comprises: a read head element, one end surface of the read head element reaching an head end surface on the ABS side; a protective coat formed on the head end surface in such a way to cover at least the one end surface of the read head element; and at least one antistatic means for preventing the protective coat from being electrostatically charged, formed on/above the element formation surface, one end surface of the at least one antistatic means reaching the head end surface, the protective coat covering a portion, not the whole, of the one end surface of the at least one antistatic means on the head end surface.

摘要翻译： 提供了一种薄膜磁头，其中抑制了读头元件和保护涂层表面之间的电压电位差引起的噪声。 薄膜磁头包括：读头元件，读头元件的一个端面到达ABS侧的头端面; 形成在头端表面上的保护涂层，以至少覆盖读头元件的一个端面; 以及至少一个抗静电装置，用于防止保护涂层被静电充电，形成在元件形成表面上或上方，至少一个抗静电装置的一个端面到达头端表面，保护涂层覆盖一部分，而不是 在头端表面上的至少一个抗静电装置的一个端面的整体。

公开(公告)号：US08085038B2

公开(公告)日：2011-12-27

申请号：US11753836

申请日：2007-05-25

申请人： Takumi Uesugi ,  Takeo Kagami ,  Tetsuro Sasaki ,  Kei Hirata ,  Masaru Hirose ,  Chi Man Lee ,  Kwok Piu Tso

发明人： Takumi Uesugi ,  Takeo Kagami ,  Tetsuro Sasaki ,  Kei Hirata ,  Masaru Hirose ,  Chi Man Lee ,  Kwok Piu Tso

IPC分类号： G01R33/12 ,  G11B5/00

CPC分类号： G11B5/455 ,  G11B5/3189 ,  G11B5/3903

摘要： A noise-testing method for a thin-film magnetic head with an MR read head element and a heating unit capable of applying a heat and a stress to the MR read head element, includes a step of applying alternately and discontinuously with each other an electrical power having a first level and an electrical power having a second level higher than the first level to the heating unit, and a step of evaluating the thin-film magnetic head by measuring a noise output or noise outputs obtained from the MR read head element when the electrical power or the electrical powers are applied to the heating unit.

摘要翻译： 具有MR读取头元件的薄膜磁头和能够向MR读取头元件施加热和应力的加热单元的噪声测试方法包括以下步骤：交替地和不连续地施加电气 具有第一电平的功率和具有比加热单元的第一电平高的第二电平的电力;以及通过测量从MR读取头元件获得的噪声输出或噪声输出来评估薄膜磁头的步骤， 电力或电力被施加到加热单元。

公开(公告)号：US20080291579A1

公开(公告)日：2008-11-27

申请号：US11753836

申请日：2007-05-25

申请人： Takumi Uesugi ,  Takeo Kagami ,  Tetsuro Sasaki ,  Kei Hirata ,  Masaru Hirose ,  Chi Man Lee ,  Kwok Piu Tso

发明人： Takumi Uesugi ,  Takeo Kagami ,  Tetsuro Sasaki ,  Kei Hirata ,  Masaru Hirose ,  Chi Man Lee ,  Kwok Piu Tso

IPC分类号： G11B5/33

CPC分类号： G11B5/455 ,  G11B5/3189 ,  G11B5/3903

摘要： A noise-testing method for a thin-film magnetic head with an MR read head element and a heating unit capable of applying a heat and a stress to the MR read head element, includes a step of applying alternately and discontinuously with each other an electrical power having a first level and an electrical power having a second level higher than the first level to the heating unit, and a step of evaluating the thin-film magnetic head by measuring a noise output or noise outputs obtained from the MR read head element when the electrical power or the electrical powers are applied to the heating unit.

摘要翻译： 具有MR读取头元件的薄膜磁头和能够向MR读取头元件施加热和应力的加热单元的噪声测试方法包括以下步骤：交替地和不连续地施加电气 具有第一电平的功率和具有比加热单元的第一电平高的第二电平的电力;以及通过测量从MR读取头元件获得的噪声输出或噪声输出来评估薄膜磁头的步骤， 电力或电力被施加到加热单元。

公开(公告)号：US20080024934A1

公开(公告)日：2008-01-31

申请号：US11790396

申请日：2007-04-25

申请人： Takumi Uesugi ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

发明人： Takumi Uesugi ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

IPC分类号： G11B5/127

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3983 ,  H01L27/222 ,  H01L43/08

摘要： An MR element incorporates a layered structure. The layered structure includes: a spacer layer having a first surface and a second surface that face toward opposite directions; a free layer disposed adjacent to the first surface of the spacer layer and having a direction of magnetization that changes in response to a signal magnetic field; and a pinned layer disposed adjacent to the second surface of the spacer layer and having a fixed direction of magnetization. The spacer layer is a layer at least part of which is made of a material other than a conductor, and the spacer layer intercepts the passage of currents or limits the passage of currents as compared with a layer entirely made of a conductor. The MR element further incorporates a conductive film that is disposed on the peripheral surface of the layered structure and allows conduction between the free layer and the pinned layer.

摘要翻译： MR元件结合了分层结构。 层状结构包括：具有朝向相反方向的第一表面和第二表面的间隔层; 邻近所述间隔层的第一表面设置并具有响应于信号磁场而变化的磁化方向的自由层; 以及与所述间隔层的第二表面相邻并且具有固定的磁化方向的被钉扎层。 间隔层是其至少一部分由导体以外的材料制成的层，并且与完全由导体制成的层相比，间隔层拦截电流的流动或限制电流的流动。 MR元件还包括设置在层状结构的外围表面上的导电膜，并允许自由层和钉扎层之间的导电。

公开(公告)号：US07876537B2

公开(公告)日：2011-01-25

申请号：US11790396

申请日：2007-04-25

申请人： Takumi Uesugi ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

发明人： Takumi Uesugi ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3983 ,  H01L27/222 ,  H01L43/08

摘要： An MR element incorporates a layered structure. The layered structure includes: a spacer layer having a first surface and a second surface that face toward opposite directions; a free layer disposed adjacent to the first surface of the spacer layer and having a direction of magnetization that changes in response to a signal magnetic field; and a pinned layer disposed adjacent to the second surface of the spacer layer and having a fixed direction of magnetization. The spacer layer is a layer at least part of which is made of a material other than a conductor, and the spacer layer intercepts the passage of currents or limits the passage of currents as compared with a layer entirely made of a conductor. The MR element further incorporates a conductive film that is disposed on the peripheral surface of the layered structure and allows conduction between the free layer and the pinned layer.

摘要翻译： MR元件结合了分层结构。 层状结构包括：具有朝向相反方向的第一表面和第二表面的间隔层; 邻近所述间隔层的第一表面设置并具有响应于信号磁场而变化的磁化方向的自由层; 以及与所述间隔层的第二表面相邻并且具有固定的磁化方向的被钉扎层。 间隔层是其至少一部分由导体以外的材料制成的层，并且与完全由导体制成的层相比，间隔层拦截电流的流动或限制电流的流动。 MR元件还包括设置在层状结构的外围表面上的导电膜，并允许自由层和钉扎层之间的导电。

公开(公告)号：US20080218912A1

公开(公告)日：2008-09-11

申请号：US11715984

申请日：2007-03-09

申请人： Kei Hirata ,  Satoshi Miura ,  Takeo Kagami ,  Tetsuro Sasaki

发明人： Kei Hirata ,  Satoshi Miura ,  Takeo Kagami ,  Tetsuro Sasaki

IPC分类号： G11B5/39

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： An MR element includes: a free layer whose direction of magnetization changes in response to a signal magnetic field; a pinned layer whose direction of magnetization is fixed; and a spacer layer disposed between these layers. The spacer layer includes: a semiconductor layer made of an n-type semiconductor; and a Schottky barrier forming layer made of a metal material having a work function higher than that of the n-type semiconductor that the semiconductor layer is made of, the Schottky barrier forming layer being disposed in at least one of a position between the semiconductor layer and the free layer and a position between the semiconductor layer and the pinned layer, touching the semiconductor layer and forming a Schottky barrier at an interface between the semiconductor layer and itself The semiconductor layer is 1.1 to 1.7 nm in thickness, and the Schottky barrier forming layer is 0.1 to 0.3 nm in thickness.

摘要翻译： MR元件包括：其磁化方向响应于信号磁场而变化的自由层; 固定磁化方向的钉扎层; 以及设置在这些层之间的间隔层。 间隔层包括：由n型半导体制成的半导体层; 以及肖特基势垒形成层，其由具有比半导体层形成的n型半导体的功函数高的金属材料制成，所述肖特基势垒形成层设置在所述半导体层之间的位置中的至少一个 自由层和半导体层与被钉扎层之间的位置，与半导体层接触并在半导体层与其自身之间的界面处形成肖特基势垒。半导体层的厚度为1.1〜1.7nm，形成肖特基势垒 层的厚度为0.1〜0.3nm。

公开(公告)号：US07241514B2

公开(公告)日：2007-07-10

申请号：US10880574

申请日：2004-07-01

申请人： Takeo Kagami ,  Takumi Uesugi ,  Satoshi Miura ,  Norio Takahashi

发明人： Takeo Kagami ,  Takumi Uesugi ,  Satoshi Miura ,  Norio Takahashi

IPC分类号： G11B5/39 ,  G11B5/27

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1164 ,  Y10T428/256

摘要： A magneto-resistive device is provided for contributing to a higher MR ratio and a reduced cleaning time for cleaning the surface of a cap layer. In the magneto-resistive device, a cap layer which serves as a protection layer is formed on a free layer which is the topmost layer of a magneto-resistive layer constituting a TMR devise. An upper electrode which is additionally used as an upper magnetic shield is electrically connected to the free layer through an upper metal layer. The cap layer comprised of a two-layer film made up of a conductive layer closer to the free layer and a topmost conductive layer. The conductive layer closer to the free layer is made of a material having higher oxygen bond energy than Ru, such as Zr, Hf, or the like. The topmost conductive layer is made of a material having lower oxygen bond energy, such as a noble metal or the like.

摘要翻译： 提供了一种磁阻装置，用于有助于更高的MR比和减少的清洁时间以清洁盖层的表面。 在磁阻装置中，作为保护层的盖层形成在作为构成TMR装置的磁阻层的最上层的自由层上。 另外用作上磁屏蔽的上电极通过上金属层电连接到自由层。 盖层由由更靠近自由层的导电层构成的双层膜和最上面的导电层组成。 更靠近自由层的导电层由诸如Zr，Hf等的比Ru更高的氧键能的材料制成。 最上面的导电层由具有较低氧键能的材料制成，例如贵金属等。

公开(公告)号：US20050008849A1

公开(公告)日：2005-01-13

申请号：US10880574

申请日：2004-07-01

申请人： Takeo Kagami ,  Takumi Uesugi ,  Satoshi Miura ,  Norio Takahashi

发明人： Takeo Kagami ,  Takumi Uesugi ,  Satoshi Miura ,  Norio Takahashi

IPC分类号： G11B5/39 ,  H01L43/08 ,  G11B5/17 ,  B32B5/16

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1164 ,  Y10T428/256

摘要： A magneto-resistive device is provided for contributing to a higher MR ratio and a reduced cleaning time for cleaning the surface of a cap layer. In the magneto-resistive device, a cap layer which serves as a protection layer is formed on a free layer which is the topmost layer of a magneto-resistive layer constituting a TMR devise. An upper electrode which is additionally used as an upper magnetic shield is electrically connected to the free layer through an upper metal layer. The cap layer comprised of a two-layer film made up of a conductive layer closer to the free layer and a topmost conductive layer. The conductive layer closer to the free layer is made of a material having higher oxygen bond energy than Ru, such as Zr, Hf, or the like. The topmost conductive layer is made of a material having lower oxygen bond energy, such as a noble metal or the like.

摘要翻译： 提供了一种磁阻装置，用于有助于更高的MR比和减少的清洁时间以清洁盖层的表面。 在磁阻装置中，作为保护层的盖层形成在作为构成TMR装置的磁阻层的最上层的自由层上。 另外用作上磁屏蔽的上电极通过上金属层电连接到自由层。 盖层由由更靠近自由层的导电层构成的双层膜和最上面的导电层组成。 更靠近自由层的导电层由诸如Zr，Hf等的比Ru更高的氧键能的材料制成。 最上面的导电层由具有较低氧键能的材料制成，例如贵金属等。