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    MAGNETIC TUNNEL JUNCTION DEVICE
    3.
    发明申请
    MAGNETIC TUNNEL JUNCTION DEVICE 审中-公开
    磁铁隧道连接装置

    公开(公告)号：US20160020385A1

    公开(公告)日：2016-01-21

    申请号：US14837558

    申请日：2015-08-27

    Applicant: Japan Science and Technology Agency ,  National Institute of Advanced Industrial Science and Technology

    Inventor： Shinji YUASA

    IPC: H01L43/10 ,  H01L43/02

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01F10/132 ,  H01F10/3254 ,  H01L27/11507 ,  H01L27/22 ,  H01L27/222 ,  H01L27/228 ,  H01L28/55 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

    Abstract translation: 通过以下制备的样品的微细加工形成的Fe（001）/ MgO（001）/ Fe（001）MTJ器件，MRAM的输出电压增加：单晶MgO（001）衬底 准备好了 外延Fe（001）下电极（第一电极）在室温下在MgO（001）晶种层上生长，然后在超高真空下进行退火。 使用MgO电子束蒸发，在室温下在Fe（001）下电极（第一电极）上外延形成MgO（001）势垒层。 然后在室温下在MgO（001）阻挡层上形成Fe（001）上电极（第二电极）。 随后在Fe（001）上电极（第二电极）上沉积Co层。 提供Co层以增加上电极的矫顽力，以实现反平行的磁化对准。

    Magnetic recording medium, method of fabricating the same, and storage apparatus
    4.
    发明授权
    Magnetic recording medium, method of fabricating the same, and storage apparatus 失效
    磁记录介质，其制造方法和存储装置

    公开(公告)号：US08673465B2

    公开(公告)日：2014-03-18

    申请号：US12640939

    申请日：2009-12-17

    Applicant: Koji Matsumoto

    Inventor： Koji Matsumoto

    IPC: G11B5/65 ,  G11B5/667

    CPC classification number: G11B5/855 ,  B82Y10/00 ,  G11B5/65 ,  G11B5/667 ,  G11B5/743 ,  G11B5/82 ,  H01F1/083 ,  H01F10/131 ,  H01F10/132

    Abstract: A magnetic recording medium includes a recording layer having a granular structure in which magnetic particles are dispersed within a non-magnetic base, and a non-magnetic material embedded in grooves of patterns formed on the recording layer. The magnetic particles have an inverted truncated cone shape with a diameter larger in an upper region of the recording layer than in a lower region of the recording layer.

    Abstract translation: 磁记录介质包括具有磁性颗粒分散在非磁性基底内的颗粒结构的记录层和嵌入在记录层上形成的图案凹槽中的非磁性材料。 磁性颗粒具有在记录层的上部区域中比在记录层的下部区域更大的倒圆锥体形状。

    Magnetoresistive effect head having a multilayered pinned layer and/or free layer having amorphous and crystalline layers, and systems thereof
    5.
    发明授权
    Magnetoresistive effect head having a multilayered pinned layer and/or free layer having amorphous and crystalline layers, and systems thereof 有权
    具有多层被钉扎层和/或具有无定形和结晶层的自由层的磁阻效应头及其系统

    公开(公告)号：US08514527B2

    公开(公告)日：2013-08-20

    申请号：US12955767

    申请日：2010-11-29

    Applicant: Kojiro Komagaki ,  Katsumi Hoshino ,  Masashige Sato ,  Hiroyuki Hoshiya

    Inventor： Kojiro Komagaki ,  Katsumi Hoshino ,  Masashige Sato ,  Hiroyuki Hoshiya

    IPC: G11B5/39

    CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/132 ,  H01F10/3254 ,  H01L43/08 ,  H01L43/10

    Abstract: According to one embodiment, a magnetoresistive effect head includes a magnetically pinned layer having a direction of magnetization that is pinned, a free magnetic layer positioned above the magnetically pinned layer, the free magnetic layer having a direction of magnetization that is free to vary, and a barrier layer comprising an insulator positioned between the magnetically pinned layer and the free magnetic layer, wherein at least one of the magnetically pinned layer and the free magnetic layer has a layered structure, the layered structure including a crystal layer comprising one of: a CoFe magnetic layer or a CoFeB magnetic layer and an amorphous magnetic layer comprising CoFeB and an element selected from: Ta, Hf, Zr, and Nb, wherein the crystal layer is positioned closer to a tunnel barrier layer than the amorphous magnetic layer. In another embodiment, a magnetic data storage system includes the magnetoresistive effect head described above.

    Abstract translation: 根据一个实施例，磁阻效应头包括具有被钉扎的磁化方向的磁性钉扎层，位于磁性钉扎层上方的自由磁性层，具有可自由变化的磁化方向的自由磁性层，以及 阻挡层，其包括定位在所述磁性被钉扎层和所述自由磁性层之间的绝缘体，其中所述磁性钉扎层和所述自由磁性层中的至少一个具有层状结构，所述层状结构包括晶体层，所述晶体层包括以下之一：CoFe 磁性层或CoFeB磁性层以及包含CoFeB和选自Ta，Hf，Zr和Nb的元素的非晶磁性层，其中所述晶体层位于比非晶磁性层更靠近隧道势垒层。 在另一个实施例中，磁数据存储系统包括上述磁阻效应头。

    TUNNELING MAGNETORESISTANCE READ HEAD HAVING A COFE INTERFACE LAYER AND METHODS FOR PRODUCING THE SAME
    6.
    发明申请
    TUNNELING MAGNETORESISTANCE READ HEAD HAVING A COFE INTERFACE LAYER AND METHODS FOR PRODUCING THE SAME 有权
    带有接合层的隧道磁阻读取头及其制造方法

    公开(公告)号：US20110141613A1

    公开(公告)日：2011-06-16

    申请号：US12948072

    申请日：2010-11-17

    Applicant: Koji Sakamoto ,  Koichi Nishioka

    Inventor： Koji Sakamoto ,  Koichi Nishioka

    IPC: G11B5/33 ,  G11B21/02 ,  B05D5/00

    CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  H01F10/132 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T29/49034

    Abstract: According to one embodiment, a method for producing a Tunneling Magnetoresistance (TMR) read head includes forming a fixed layer, forming an insulating barrier layer above the fixed layer, forming a free layer above the insulating barrier layer, and annealing the free layer, the fixed layer, and the insulating barrier layer. The fixed layer includes a first ferromagnetic layer having a CoxFe (0≦x≦15) interface layer and a Co-based amorphous metallic layer between the CoxFe interface layer and the insulating barrier layer, an antiparallel coupling layer below the first ferromagnetic layer, and a second ferromagnetic layer below the antiparallel coupling layer. In another embodiment, a TMR read head includes the layers described above, and may be included in a magnetic data storage system.

    Abstract translation: 根据一个实施例，一种用于制造隧道磁阻（TMR）读头的方法包括形成固定层，在固定层上形成绝缘阻挡层，在绝缘阻挡层上方形成自由层，退火自由层， 固定层和绝缘阻挡层。 该固定层包括具有CoxFe（0＆amp; nlE; x＆nlE; 15）界面层的第一铁磁层和在CoxFe界面层和绝缘阻挡层之间的Co基非晶金属层，在第一铁磁层下面​​的反向平行耦合层，以及 位于反平行耦合层下面的第二铁磁层。 在另一个实施例中，TMR读取头包括上述层，并且可以包括在磁数据存储系统中。

    Magnetic tunnel junction device and method of manufacturing the same
    7.
    发明申请
    Magnetic tunnel junction device and method of manufacturing the same 有权
    磁隧道结装置及其制造方法

    公开(公告)号：US20110031570A1

    公开(公告)日：2011-02-10

    申请号：US12923643

    申请日：2010-09-30

    Applicant: Shinji Yuasa

    Inventor： Shinji Yuasa

    IPC: H01L29/82 ,  H01L21/02

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01F10/132 ,  H01F10/3254 ,  H01L27/11507 ,  H01L27/22 ,  H01L27/222 ,  H01L27/228 ,  H01L28/55 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared by the following steps. A single-crystalline MgO (001) substrate 11 is prepared. An epitaxial Fe(001) lower electrode (a first electrode) 17 with the thickness of 50 nm is grown on a MgO(001) seed layer 15 at room temperature, followed by annealing under ultrahigh vacuum (2×10−8 Pa) and at 350° C. A MgO(001) barrier layer 21 with the thickness of 2 nm is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) with the thickness of 10 nm is then formed on the MgO(001) barrier layer 21 at room temperature. This is successively followed by the deposition of a Co layer 21 with the thickness of 10 nm on the Fe(001) upper electrode (the second electrode) 23. The Co layer 21 is provided so as to increase the coercive force of the upper electrode 23 in order to realize an antiparallel magnetization alignment.

    Abstract translation: 通过以下步骤制备的样品的微细加工形成的Fe（001）/ MgO（001）/ Fe（001）MTJ装置来增加MRAM的输出电压。 制备单晶MgO（001）基板11。 在室温下在MgO（001）种子层15上生长厚度为50nm的外延Fe（001）下电极（第一电极）17，然后在超高真空（2×10-8Pa）下退火， 在350℃下，使用MgO电子束蒸发，在室温下在Fe（001）下电极（第一电极）上外延形成厚度为2nm的MgO（001）势垒层21。 然后在室温下在MgO（001）阻挡层21上形成厚度为10nm的Fe（001）上电极（第二电极）。 随后在Fe（001）上电极（第二电极）23上沉积厚度为10nm的Co层21，Co层21设置成增加上电极的矫顽力 23以实现反平行磁化对准。

    Power Converter Employing a Micromagnetic Device
    8.
    发明申请
    Power Converter Employing a Micromagnetic Device 有权
    使用微电磁设备的电源转换器

    公开(公告)号：US20090066468A1

    公开(公告)日：2009-03-12

    申请号：US11852703

    申请日：2007-09-10

    Applicant: Ashraf W. Lotfi ,  Trifon M. Liakopoulos ,  Robert W. Filas

    Inventor： Ashraf W. Lotfi ,  Trifon M. Liakopoulos ,  Robert W. Filas

    IPC: H01F27/24 ,  G05F1/00

    CPC classification number: H01F41/046 ,  H01F10/132 ,  H01F10/138 ,  H01F10/265 ,  H01L2224/11

    Abstract: A power converter including a power train, a controller and a driver. The power train includes a switch that conducts for a duty cycle and provides a regulated output characteristic for the power converter, and a micromagnetic device interposed between the switch and the output of the power converter. The micromagnetic device includes a substrate, and a magnetic core layer formed over the substrate from a magnetic alloy including iron, cobalt and phosphorous. A content of the cobalt is in a range of 1.8 to 4.5 atomic percent. A content of the phosphorus is in a range of 20.1 to 30 atomic percent. A content of the iron is substantially a remaining proportion of the magnetic alloy. The controller provides a signal to control the duty cycle of the switch. The driver provides a drive signal to the switch as a function of the signal from the controller.

    Abstract translation: 一种功率转换器，包括传动系，控制器和驱动器。 动力传动系包括开关，用于进行占空比并为功率转换器提供稳定的输出特性，以及插入在开关和功率转换器的输出端之间的微电磁装置。 该微型磁性器件包括基底和由包括铁，钴和磷的磁性合金在基底上形成的磁芯层。 钴的含量在1.8〜4.5原子％的范围内。 磷的含量为20.1〜30原子％。 铁的含量基本上是磁性合金的剩余比例。 控制器提供一个信号来控制开关的占空比。 驱动器根据来自控制器的信号向开关提供驱动信号。

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