公开(公告)号：US11894221B2

公开(公告)日：2024-02-06

申请号：US16960384

申请日：2019-05-23

申请人： JX Metals Corporation

发明人： Yasuyuki Iwabuchi ,  Manami Masuda ,  Takashi Kosho

IPC分类号： H01J37/34 ,  C23C14/34 ,  C22C19/07 ,  H01F41/18 ,  H01F10/16 ,  G11B5/65 ,  G11B5/851

CPC分类号： H01J37/3429 ,  C22C19/07 ,  C23C14/3414 ,  G11B5/656 ,  G11B5/658 ,  G11B5/851 ,  H01F10/16 ,  H01F41/183

摘要： Provided is a sputtering target, comprising: from 0.001 mol % to 0.5 mol % of Bi; from 45 mol % or less of Cr; 45 mol % or less of Pt; 60 mol % or less of Ru; and a total of 1 mol % to 35 mol % of at least one metal oxide, the balance being Co and inevitable impurities.

公开(公告)号：US20180248554A1

公开(公告)日：2018-08-30

申请号：US15959700

申请日：2018-04-23

申请人： Georgia Tech Research Corporation

发明人： Chenyun Pan ,  Sourav Dutta ,  Azad Naeemi

IPC分类号： H03K19/20 ,  H01F10/32 ,  H01F10/14 ,  H01F10/16 ,  H01L43/10 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

CPC分类号： H03K19/20 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3218 ,  H01L27/22 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Embodiments of the present invention relate generally to logic devices, and more particularly, to magnetoelectric magnetic tunneling junction computational devices. Aspects of the disclosed technology include a stand-alone voltage-controlled magnetoelectric device that satisfies essential requirements for general logic applications, including nonlinearity, gain, concatenability, feedback prevention, and a complete set of Boolean operations based on the majority gate and inverter. Aspects of the present disclosed technology can eliminate the need for any auxiliary FETs to preset or complicated clocking schemes and prevents the racing condition.

公开(公告)号：US10049761B2

公开(公告)日：2018-08-14

申请号：US15450024

申请日：2017-03-05

申请人： RIKEN

发明人： Yusuke Tokunaga ,  Xiuzhen Yu ,  Yasujiro Taguchi ,  Yoshinori Tokura ,  Yoshio Kaneko

IPC分类号： G11C19/08 ,  H01F10/16 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22

CPC分类号： G11C19/0841 ,  G11C11/1675 ,  G11C19/08 ,  H01F10/16 ,  H01L27/105 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

摘要： To provide a magnetic element which can generate a skyrmion, and a skyrmion memory which applies the magnetic element or the like.To provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having a β-Mn type crystal structure. Also, to provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having an Au4Al type crystal structure.

公开(公告)号：US20180026179A1

公开(公告)日：2018-01-25

申请号：US15707373

申请日：2017-09-18

申请人： Headway Technologies, Inc.

发明人： Jian Zhu ,  Guenole Jan ,  Yuan-Jen Lee ,  Huanlong Liu ,  Ru-Ying Tong ,  Po-Kang Wang

IPC分类号： H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01F10/30

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01F10/16 ,  H01F10/30 ,  H01F10/32 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

摘要： A laminated seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sequentially sputter depositing a first seed layer, a first amorphous layer, a second seed layer, and a second amorphous layer where each seed layer may be Mg and has a resputtering rate 2 to 30× that of the amorphous layers that are TaN, SiN, or a CoFeM alloy. A template layer that is NiCr or NiFeCr is formed on the second amorphous layer. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The laminated seed layer stack may include a bottommost Ta or TaN buffer layer.

公开(公告)号：US20170324027A1

公开(公告)日：2017-11-09

申请号：US15662114

申请日：2017-07-27

申请人： Avalanche Technology, Inc.

发明人： Yiming Huai ,  Huadong Gan ,  Zihui Wang

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  H01F10/32 ,  H01F10/16 ,  H01L43/10 ,  H01F10/14

CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3222 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01F41/307 ,  H01L27/222 ,  H01L27/228 ,  H01L29/66984 ,  H01L43/08 ,  H01L43/10

摘要： The present invention is directed to a magnetic tunnel junction (MTJ) memory element including a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer; a magnesium oxide layer formed adjacent to the magnetic fixed layer; and a metal layer comprising nickel and chromium formed adjacent to the magnesium oxide layer. The magnetic reference layer structure includes a first and a second magnetic reference layers with a first perpendicular enhancement layer (PEL) interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction opposite to the first invariable magnetization direction. The magnetic free layer structure includes one or more magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes thereof.

公开(公告)号：US20170317273A1

公开(公告)日：2017-11-02

申请号：US15652816

申请日：2017-07-18

申请人： TOKYO ELECTRON LIMITED

发明人： Toru KITADA ,  Kanto NAKAMURA ,  Atsushi GOMI ,  Shinji FURUKAWA ,  Yusuke SUZUKI

IPC分类号： H01L43/12 ,  H01L43/08 ,  H01F41/18 ,  H01F10/32 ,  C23C14/08 ,  H01F10/16 ,  C23C14/58 ,  C23C14/34 ,  H01L43/10

CPC分类号： H01L43/12 ,  C23C14/082 ,  C23C14/165 ,  C23C14/34 ,  C23C14/568 ,  C23C14/5853 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/18 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10

摘要： A method for forming a perpendicular magnetization type magnetic tunnel junction element includes forming a tunnel barrier layer on a first magnetic layer of a workpiece, cooling the workpiece on which the tunnel barrier layer is formed, and forming a second magnetic layer on the tunnel barrier layer after the cooling.

公开(公告)号：US20170309813A1

公开(公告)日：2017-10-26

申请号：US15443741

申请日：2017-02-27

申请人： Globalfoundries Singapore Pte. Ltd.

发明人： Vinayak Bharat Naik ,  Kazutaka Yamane ,  Kangho Lee

IPC分类号： H01L43/10 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/10 ,  H01F10/145 ,  H01F10/16 ,  H01F10/3213 ,  H01F41/32 ,  H01L27/228 ,  H01L43/08

摘要： Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a fixed layer that is magnetic and a tunnel barrier layer overlying the fixed layer, where the tunnel barrier layer is non-magnetic. A total free layer overlies the tunnel barrier layer, where the total free layer includes a plurality of individual free layers, wherein each of the plurality of individual free layers includes one or more of cobalt, iron, or boron, and where each of the plurality of individual free layers is magnetic. At least one of the plurality of individual free layers includes an atomic ratio of cobalt to iron that is from about 0.9/1 to about 1.1/1.

公开(公告)号：US09608038B2

公开(公告)日：2017-03-28

申请号：US15174754

申请日：2016-06-06

申请人： Avalanche Technology, Inc.

发明人： Zihui Wang ,  Yuchen Zhou ,  Huadong Gan ,  Yiming Huai

IPC分类号： H01L27/22 ,  H01L43/08 ,  H01F10/32 ,  G11C11/16 ,  H01F41/30 ,  H01L29/66 ,  H01L43/02 ,  H01L43/10 ,  B82Y25/00

CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3222 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01F41/307 ,  H01L27/222 ,  H01L27/228 ,  H01L29/66984 ,  H01L43/08 ,  H01L43/10

摘要： The present invention is directed to an STT-MRAM device comprising a plurality of memory elements. Each of the memory elements includes an MTJ structure in between a seed layer and a cap layer. The MTJ structure includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; and a magnetic fixed layer separated from the magnetic reference layer structure by an anti-ferromagnetic coupling layer. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by an intermediate magnetic reference layer. The first, second, and intermediate magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction that is opposite to the first invariable magnetization direction.

公开(公告)号：US09484531B2

公开(公告)日：2016-11-01

申请号：US14744137

申请日：2015-06-19

申请人： International Business Machines Corporation

发明人： Guohan Hu ,  Daniel C. Worledge

IPC分类号： H01L43/12 ,  H01L43/10 ,  H01L43/08

CPC分类号： H01L43/10 ,  G11C11/161 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/32 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).

摘要翻译： 磁性材料包括在相对的铁层之间的钴层。 铁层包括铁并且是体心立方（BCC），钴层包括钴并且是BCC或非晶体，并且磁性材料具有垂直磁各向异性（PMA）。

公开(公告)号：US09299916B2

公开(公告)日：2016-03-29

申请号：US14263657

申请日：2014-04-28

申请人： Sony Corporation

发明人： Kazuhiro Bessho ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC分类号： G11C11/14 ,  H01L43/02 ,  B82Y25/00 ,  H01F10/16 ,  H01F10/32 ,  H01L27/22 ,  H01L43/08 ,  G11C11/16

CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

摘要： There is disclosed a memory element including a memory layer that maintains information through the magnetization state of a magnetic material, a magnetization-fixed layer with a magnetization that is a reference of information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer. The storing of the information is performed by inverting the magnetization of the memory layer by using a spin torque magnetization inversion occurring according to a current flowing in the lamination direction of a layered structure having the memory layer, the intermediate layer, and the magnetization-fixed layer, the memory layer includes an alloy region containing at least one of Fe and Co, and a magnitude of an effective diamagnetic field which the memory layer receives during magnetization inversion thereof is smaller than the saturated magnetization amount of the memory layer.

摘要翻译： 公开了一种存储元件，其包括通过磁性材料的磁化状态保持信息的存储层，作为存储在存储层中的信息的参考的磁化的磁化固定层，以及由 非磁性材料，并且设置在存储层和磁化固定层之间。 通过使用根据在具有存储层，中间层和磁化固定的层叠结构的层叠方向上流动的电流发生的自旋转矩磁化反转而使存储层的磁化反转来进行信息的存储 存储层包括含有Fe和Co中的至少一种的合金区域，并且存储层在其磁化反转期间接收的有效抗磁场的大小小于存储层的饱和磁化量。