公开(公告)号：US09865584B1

公开(公告)日：2018-01-09

申请号：US15344087

申请日：2016-11-04

Applicant: Texas Instruments Incorporated

Inventor： He Lin ,  Kun Chen ,  Chao Wu ,  Dening Wang ,  Lily Springer ,  Andy Strachan ,  Gang Xue

IPC: H01L27/02 ,  H01L27/08 ,  H01L29/866 ,  H01L29/06

CPC classification number: H01L27/0248 ,  H01L27/0814 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/861 ,  H01L29/866

Abstract: A contact array optimization scheme for ESD devices. In one embodiment, contact apertures patterned through a pre-metal dielectric layer over active areas may be selectively modified in size, shape, placement and the like, to increase ESD protection performance, e.g., such as maximizing the transient current density, etc., in a standard ESD rating test.