公开(公告)号：US20210193444A1

公开(公告)日：2021-06-24

申请号：US17197947

申请日：2021-03-10

Applicant: Tokyo Electron Limited

Inventor： Ching Ling MENG ,  Holger TUITJE ,  Qiang ZHAO ,  Hanyou CHU ,  Xinkang TIAN

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/66

Abstract: An apparatus for in-situ etching monitoring in a plasma processing chamber includes a continuous wave broadband light source, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed from the continuous wave broadband light source at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and to direct the reflected light beam to a first light detector, and a controller. The controller is configured to determine a property of the substrate or structures formed thereupon based on a reference light beam and the reflected light beam, and control an etch process based on the determined property. The reference light beam is generated by the illumination system by splitting a portion of the incident light beam and directed to a second light detector.