公开(公告)号：US20170314991A1

公开(公告)日：2017-11-02

申请号：US15648035

申请日：2017-07-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ching-Ling MENG ,  Holger TUITJE ,  Yan CHEN ,  Mihail MIHAYLOV

IPC: G01J3/443 ,  G01N21/31 ,  G01N21/68

CPC classification number: G01J3/443 ,  G01N21/31 ,  G01N21/68 ,  G01N2201/10

Abstract: Disclosed is a method, system, and apparatus for optical emission measurement. The apparatus includes a collection system for collecting a plasma optical emission spectra through an optical window disposed at a wall of a plasma processing chamber. The optical system includes a mirror configured to scan a plurality of non-coincident rays across the plasma processing chamber; and a telecentric coupler for collecting an optical signal from a plasma and directing the optical signal to a spectrometer for measuring the plasma optical emission spectra.

公开(公告)号：US20210193444A1

公开(公告)日：2021-06-24

申请号：US17197947

申请日：2021-03-10

Applicant: Tokyo Electron Limited

Inventor： Ching Ling MENG ,  Holger TUITJE ,  Qiang ZHAO ,  Hanyou CHU ,  Xinkang TIAN

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/66

Abstract: An apparatus for in-situ etching monitoring in a plasma processing chamber includes a continuous wave broadband light source, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed from the continuous wave broadband light source at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and to direct the reflected light beam to a first light detector, and a controller. The controller is configured to determine a property of the substrate or structures formed thereupon based on a reference light beam and the reflected light beam, and control an etch process based on the determined property. The reference light beam is generated by the illumination system by splitting a portion of the incident light beam and directed to a second light detector.

公开(公告)号：US20150078416A1

公开(公告)日：2015-03-19

申请号：US14490430

申请日：2014-09-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun PEI ,  Junwei BAO ,  Holger TUITJE ,  Ching-Ling MENG ,  Mihail D. MIHAYLOV

IPC: G01K11/24 ,  H01L21/66

CPC classification number: G01K11/24 ,  H01L21/67248

Abstract: Disclosed is a method and apparatus for measuring semiconductor substrate temperature using a differential acoustic time of flight measurement technique. The measurement is based on measuring the time of flight of acoustic (ultrasonic) waves across the substrate, and calculating a substrate temperature from the measured time of flight and the known temperature dependence of the speed of sound for the substrate material. The differential acoustic time of flight method eliminates most sources of interference and error, for example due to varying coupling between an ultrasonic transducer and the substrate. To further increase the accuracy of the differential acoustic time of flight measurement, a correlation waveform processing algorithm is utilized to obtain a differential acoustic time of flight measurement from two measured ultrasonic waveforms. To facilitate signal recognition and processing, a symmetric Lamb mode may be used as mode of excitation of the substrate.

Abstract translation: 公开了一种使用飞行测量技术的差分声学时间来测量半导体衬底温度的方法和装置。 该测量基于测量穿过基底的声波（超声波）的飞行时间，以及从测量的飞行时间和基底材料的声速的已知温度依赖性来计算基底温度。 差分声学时间飞行方法消除了大量的干扰和误差源，例如由于超声换能器和基底之间的耦合变化。 为了进一步提高差分声学时间飞行测量的精度，利用相关波形处理算法从两个测量的超声波波形获得飞行测量的差分声学时间。 为了便于信号识别和处理，可以使用对称的兰姆模式作为衬底的激发模式。

公开(公告)号：US20240418501A1

公开(公告)日：2024-12-19

申请号：US18501672

申请日：2023-11-03

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Yan CHEN ,  Holger TUITJE ,  Basanta BHADURI ,  Ching Ling MENG ,  Da SONG ,  Xinkang TIAN

IPC: G01B11/06

Abstract: A method of film thickness measurement includes illuminating a top layer of a sample in a first region with a broadband illumination beam. The sample includes a substrate and a plurality of semiconductor structures formed between the substrate and the top layer. A first reflectivity spectrum of the sample is obtained in the first region. A first thickness of the top layer in the first region is determined by applying a top-layer model to the first reflectivity spectrum. The top-layer model is substantially unaffected by the plurality of semiconductor structures.

公开(公告)号：US20180286643A1

公开(公告)日：2018-10-04

申请号：US15472494

申请日：2017-03-29

Applicant: Tokyo Electron Limited

Inventor： Holger TUITJE ,  Xinkang Tian ,  Ching-Ling Meng ,  Vi Vuong ,  Wen Jin ,  Zheng Yan ,  Mihail Mihaylov

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/66 ,  G01N21/31 ,  G06N99/00

Abstract: An apparatus, system, and method for in-situ etching monitoring in a plasma processing chamber. The apparatus includes a continuous wave broadband light source; an illumination system configured to illuminate an area on a substrate with an incident light beam having a fixed polarization direction, the incident light beam from the broadband light source being modulated by a shutter; a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector; and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property value from the processed light, and control an etch process based on the determined property value.

公开(公告)号：US20250112065A1

公开(公告)日：2025-04-03

申请号：US18478946

申请日：2023-09-29

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Basanta BHADURI ,  Holger TUITJE ,  Mihail MIHAYLOV ,  Xinkang TIAN ,  Da SONG

IPC: H01L21/67 ,  G01N21/84 ,  H01L21/66

Abstract: A system includes a vacuum chamber having a wafer chuck therein and side windows slanted relative to the wafer chuck. A wafer stage is positioned below the wafer chuck and configured to rotate the wafer chuck and move the wafer chuck vertically. Illumination optics, including an illumination corrector lens, are configured to receive light and direct the light through an illumination vacuum window of the side windows to an optical spot on the wafer. Collection optics, including a collection corrector lens, are configured to receive the light from the optical spot through a collection vacuum window of the side windows and direct the light to a detector. A transfer module is configured to move the illumination optics and the collection optics parallel to the illumination vacuum window and the collection vacuum window respectively. The illumination corrector lens and the collection corrector lens are configured to reduce chromatic aberration.

公开(公告)号：US20150124250A1

公开(公告)日：2015-05-07

申请号：US14530164

申请日：2014-10-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Junwei BAO ,  Ching-Ling MENG ,  Holger TUITJE ,  Mihail MIHAYLOV ,  Yan CHEN ,  Zheng YAN ,  Haixing ZOU ,  Hanyou CHU

IPC: G01J3/443 ,  G01N21/31

CPC classification number: G01J3/443 ,  G01N21/31 ,  G01N21/68 ,  G01N2201/10

Abstract: Disclosed is a method, computer method, system, and apparatus for measuring two-dimensional distributions of optical emissions from a plasma in a semiconductor plasma processing chamber. The acquired two-dimensional distributions of plasma optical emissions can be used to infer the two-dimensional distributions of concentrations of certain chemical species of interest that are present in the plasma, and thus provide a useful tool for process development and also for new and improved processing tool development. The disclosed technique is computationally simple and inexpensive, and involves the use of an expansion of the assumed optical intensity distribution into a sum of basis functions that allow for circumferential variation of optical intensity. An example of suitable basis functions are Zernike polynomials.

Abstract translation: 公开了一种用于测量半导体等离子体处理室中的等离子体的光发射的二维分布的方法，计算机方法，系统和装置。 所获得的等离子体光学发射的二维分布可以用于推断存在于等离子体中的某些化学物质的浓度的二维分布，并且因此为工艺开发提供了有用的工具，并为新的和改进的 加工工具开发。 所公开的技术在计算上是简单和便宜的，并且涉及将假设的光强度分布的扩展用于允许光强度的周向变化的基函数的总和。 合适的基函数的例子是泽尔尼克多项式。