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公开(公告)号：US20240418501A1
公开(公告)日：2024-12-19
申请号：US18501672
申请日：2023-11-03
Applicant: Tokyo Electron Limited
Inventor： Ivan MALEEV , Yan CHEN , Holger TUITJE , Basanta BHADURI , Ching Ling MENG , Da SONG , Xinkang TIAN
IPC: G01B11/06
Abstract: A method of film thickness measurement includes illuminating a top layer of a sample in a first region with a broadband illumination beam. The sample includes a substrate and a plurality of semiconductor structures formed between the substrate and the top layer. A first reflectivity spectrum of the sample is obtained in the first region. A first thickness of the top layer in the first region is determined by applying a top-layer model to the first reflectivity spectrum. The top-layer model is substantially unaffected by the plurality of semiconductor structures.
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2.发明申请公开(公告)号：US20240387448A1
公开(公告)日：2024-11-21
申请号：US18419733
申请日：2024-01-23
Applicant: Tokyo Electron Limited
Inventor： Francisco MACHUCA , James S. PAPANU , Xinkang TIAN , Arkalgud SITARAM
Abstract: A hybrid bonding apparatus includes a hybrid bonder that has a bonder head and is configured to bond a first semiconductor structure to a second semiconductor structure via hybrid bonding. The hybrid bonding apparatus also includes an X-ray probe having an X-ray source and a detector. The bonder head is positioned in a measurement gap between the X-ray source and the detector or positioned in a measurement space opposite to both the X-ray source and the detector. The X-ray probe is configured to irradiate X-rays through the first semiconductor structure and the second semiconductor structure, in whole or in part, to measure relative positions of the first semiconductor structure and the second semiconductor structure. The hybrid bonder is configured to align the first semiconductor structure and the second semiconductor structure based on the relative positions of the first semiconductor structure and the second semiconductor structure.
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公开(公告)号：US20170350826A1
公开(公告)日：2017-12-07
申请号：US15611290
申请日：2017-06-01
Applicant: Tokyo Electron Limited
Inventor： Xinkang TIAN , Ching-Ling MENG
CPC classification number: G01N21/8806 , G01N21/49 , G01N21/9501 , G01N2021/4735 , G01N2021/8822 , G01N2201/06113
Abstract: Provided is a method, system, and apparatus for inspecting a substrate. The method comprises illuminating the substrate with a singular laser beam, the singular laser beam forming an illuminated spot on the substrate and a bright fringe at a surface of the substrate, the bright fringe extending over at least a portion of the illuminated spot, and detecting, by an optical detection system, scattered light from nano-defects present on the substrate within the illuminated spot.
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公开(公告)号：US20250112065A1
公开(公告)日：2025-04-03
申请号：US18478946
申请日：2023-09-29
Applicant: Tokyo Electron Limited
Inventor： Ivan MALEEV , Basanta BHADURI , Holger TUITJE , Mihail MIHAYLOV , Xinkang TIAN , Da SONG
Abstract: A system includes a vacuum chamber having a wafer chuck therein and side windows slanted relative to the wafer chuck. A wafer stage is positioned below the wafer chuck and configured to rotate the wafer chuck and move the wafer chuck vertically. Illumination optics, including an illumination corrector lens, are configured to receive light and direct the light through an illumination vacuum window of the side windows to an optical spot on the wafer. Collection optics, including a collection corrector lens, are configured to receive the light from the optical spot through a collection vacuum window of the side windows and direct the light to a detector. A transfer module is configured to move the illumination optics and the collection optics parallel to the illumination vacuum window and the collection vacuum window respectively. The illumination corrector lens and the collection corrector lens are configured to reduce chromatic aberration.
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公开(公告)号：US20230055839A1
公开(公告)日：2023-02-23
申请号：US17889114
申请日：2022-08-16
Applicant: Tokyo Electron Limited
Inventor： Ivan MALEEV , Shin-Yee LU , Dimitri KLYACHKO , Ching Ling MENG , Xinkang TIAN
IPC: H01L21/68 , H01J37/32 , H01L21/677
Abstract: A method of manufacturing semiconductor devices includes repeatedly performing a transfer operation which transfers each of a plurality of semiconductor wafers between a substrate handling module and a processing chamber through a wafer access port, the processing chamber including at least one consumable component. Using the processing chamber, a semiconductor manufacturing process is performed on each of the plurality of semiconductor wafers; and detecting an optical signal from the at least one consumable component during a time when the processing chamber is not performing the semiconductor manufacturing process on the wafers.
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Patent Agency Ranking
公开(公告)号：US20220139743A1
公开(公告)日：2022-05-05
申请号：US17088885
申请日：2020-11-04
Applicant: Tokyo Electron Limited
Inventor： Ivan MALEEV , Yan CHEN , Ching-Ling MENG , Xinkang TIAN
IPC: H01L21/67 , G01N21/55 , G01N21/95 , G01N23/2251
Abstract: An apparatus for detecting defects on a sample is provided. The apparatus includes a stage for receiving a sample to be inspected, and a first light source configured to generate an incident light beam to illuminate the sample on the stage. The first light source is configured to sequentially emit light of different wavelengths in wavelength sweeps. The apparatus also includes imaging optics for collecting light scattered from the sample and for forming a detection light beam, a detector for receiving the detection light beam and acquiring images of the sample, collection optics disposed within the detection light beam and configured to direct the detection light beam to the detector, and a first light modulator. The first light modulator is configured to filter out signals from the detection light beam, where the signals originate from uniform periodicity of uniformly repeating structures on the sample.
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公开(公告)号：US20240419885A1
公开(公告)日：2024-12-19
申请号：US18535103
申请日：2023-12-11
Applicant: Tokyo Electron Limited
Inventor： Yan CHEN , Vi VUONG , Xinkang TIAN , Francisco MACHUCA
IPC: G06F30/398 , G06F119/18
Abstract: A method of film thickness modeling includes receiving optical data of a sample having a top layer and at least one underlying layer. First simulation data are obtained by inputting the optical data into a multi-layer model. When a GOF of the first simulation data is below a threshold, a simulated thickness is obtained by inputting the optical data into a top-layer model that is substantially unaffected by the at least one underlying layer. A starting point of the thickness of the multi-layer model is adjusted based on the simulated thickness. Second simulation data are obtained by inputting the optical data into the multi-layer model. When the GOF of the second simulation data is below the threshold, the starting point of the thickness in the multi-layer model is re-adjusted, and third simulation data are obtained by inputting the optical data into the multi-layer model.
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公开(公告)号：US20220381612A1
公开(公告)日：2022-12-01
申请号：US17335814
申请日：2021-06-01
Applicant: Tokyo Electron Limited
Inventor： Yan CHEN , Xinkang TIAN
Abstract: Aspects of the present disclosure provide a method for wavelength calibration of a spectrometer. The method can include receiving a calibration light signal having first spectral components of different first wavelengths; separating and projecting the first spectral components onto pixels of a detector of the spectrometer; establishing a relation between the first wavelengths and pixel numbers of first pixels on which the first spectral components are projected; calculating first residual errors between the first wavelengths and estimated wavelengths that are associated by the relation to the pixel numbers of the first pixels; receiving an optical signal having a second spectral component of a second wavelength; projecting the optical signal onto a second pixel; and calibrating the second wavelength based on a second residual error calculated based on one of the first residual errors that corresponds to a pair of the first pixels between which the second pixel is located.
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公开(公告)号：US20210057195A1
公开(公告)日：2021-02-25
申请号：US16548333
申请日：2019-08-22
Applicant: Tokyo Electron Limited
Inventor： Yan CHEN , Xinkang TIAN , Vi VUONG
IPC: H01J37/32 , G06F17/16 , H01L21/3065 , H01L21/67
Abstract: Described is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. OES data is acquired by a spectrometer in a plasma etch processing chamber. The acquired time-evolving spectral data is first filtered and de-meaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. Grouping of the principal components weights into two separate groups corresponding to positive and negative natural wavelengths, creates separate signed trends (synthetic wavelengths).
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公开(公告)号：US20230097892A1
公开(公告)日：2023-03-30
申请号：US18075058
申请日：2022-12-05
Applicant: Tokyo Electron Limited
Inventor： Yan CHEN , Xinkang TIAN
Abstract: Disclosed are embodiments of an improved apparatus and system, and associated methods for optically diagnosing a semiconductor manufacturing process. A hyperspectral imaging system is used to acquire spectrally-resolved images of emissions from the plasma, in a plasma processing system. Acquired hyperspectral images may be used to determine the chemical composition of the plasma and the plasma process endpoint. Alternatively, a hyperspectral imaging system is used to acquire spectrally-resolved images of a substrate before, during, or after processing, to determine properties of the substrate or layers and features formed on the substrate, including whether a process endpoint has been reached; or before or after processing, for inspecting the substrate condition.
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