公开(公告)号：US20230260807A1

公开(公告)日：2023-08-17

申请号：US18106753

申请日：2023-02-07

Applicant: Tokyo Electron Limited

Inventor： Yasuo KIYOHARA

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67034 ,  H01L21/6719 ,  H01L21/67742

Abstract: A substrate processing apparatus includes: a processing container including an internal space where a supercritical drying process is performed on a substrate having a surface to which a liquid is attached, by using a processing fluid in a supercritical state; a housing including a processing region where the processing container is disposed, and a carry-in/out region where carry-in/out of the substrate is performed; a delivery section that is provided in the carry-in/out region to deliver the substrate to/from a substrate transfer arm entering the carry-in/out region from an outside of the housing; a substrate transfer section that transfers the substrate between the delivery section and the processing container; and a gas supply provided in the carry-in/out region to supply a dry gas to the processing container.

公开(公告)号：US20230028053A1

公开(公告)日：2023-01-26

申请号：US17949437

申请日：2022-09-21

Applicant: Tokyo Electron Limited

Inventor： Yasuo KIYOHARA ,  Hiroaki INADOMI ,  Satoshi OKAMURA

IPC: H01L21/67 ,  B08B3/10 ,  B08B5/00

Abstract: A processing fluid supplying method includes: supplying a processing fluid of a gaseous state to a circulation line; generating a processing fluid of a liquid state by cooling the processing fluid of the gaseous state in the circulation line; branching the processing fluid of the liquid state from the circulation line to a branch line; and generating a processing fluid of a supercritical state by heating the processing fluid of the liquid state in the circulation line.

公开(公告)号：US20180096863A1

公开(公告)日：2018-04-05

申请号：US15718369

申请日：2017-09-28

Applicant: Tokyo Electron Limited

Inventor： Gentaro GOSHI ,  Hiromi KIYOSE ,  Yasuo KIYOHARA

IPC: H01L21/67 ,  B08B3/08 ,  F26B5/00

CPC classification number: H01L21/67034 ,  B08B3/08 ,  B08B7/0021 ,  F26B5/005 ,  H01L21/02057 ,  H01L21/02101

Abstract: Disclosed is a substrate liquid processing method including: a first processing step of discharging a fluid in the processing container until an inside of the processing container reaches a first discharge ultimate pressure at which the processing fluid in the supercritical state is not vaporized, and then supplying the processing fluid into the processing container until the inside of the processing container reaches a first supply ultimate pressure at which vaporization of the processing fluid does not occur; and a second processing step of discharging a fluid in the processing container until the inside of the processing container reaches a second discharge ultimate pressure at which the processing fluid in the supercritical state is not vaporized, and then supplying the processing fluid into the processing container until the inside of the processing container reaches a second supply ultimate pressure at which vaporization of the processing fluid does not occur.