公开(公告)号：US20220359233A1

公开(公告)日：2022-11-10

申请号：US17661095

申请日：2022-04-28

Applicant: Tokyo Electron Limited

Inventor： Gentaro GOSHI

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677

Abstract: A substrate processing apparatus includes: a batch processor configured to collectively process a lot including plural substrates; a single-wafer processor configured to process the substrates included in the lot one by one; and a transport portion configured to deliver the substrates one by one between the batch processor and the single-wafer processor. The batch processor includes a processing tank configured to store a processing liquid including a rinsing liquid. The transport portion includes a fluid supplier configured to supply, after receiving the substrates included in the lot in the processing tank and until delivering the substrates to the single-wafer processor, a low surface tension fluid having a lower surface tension than the rinsing liquid to at least one of the processing tank and the substrates.

公开(公告)号：US20220208566A1

公开(公告)日：2022-06-30

申请号：US17644406

申请日：2021-12-15

Applicant: Tokyo Electron Limited

Inventor： Gentaro GOSHI

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing method includes: a pressure increasing process of increasing an internal pressure of a process container to a processing pressure by supplying a process fluid into the process container; and after the pressure increasing process, a circulating process of supplying the process fluid from a second discharge part into the process container and discharging the process fluid in the process container from a fluid discharge part, while maintaining the internal pressure at the processing pressure, wherein the pressure increasing process includes: a first pressure increasing stage of increasing the internal pressure to a switching pressure by supplying the process fluid from a first discharge part into the process container; and after the first pressure increasing stage, a second pressure increasing stage of increasing the internal pressure from the switching pressure to the processing pressure by supplying the process fluid from the second discharge part into the process container.

公开(公告)号：US20170320107A1

公开(公告)日：2017-11-09

申请号：US15491058

申请日：2017-04-19

Applicant: Tokyo Electron Limited

Inventor： Gentaro GOSHI ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII ,  Takayuki TOSHIMA

IPC: B08B3/10 ,  H01L21/67

CPC classification number: B08B3/10 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109

Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.

公开(公告)号：US20250149353A1

公开(公告)日：2025-05-08

申请号：US18935536

申请日：2024-11-03

Applicant: Tokyo Electron Limited

Inventor： Gentaro GOSHI

IPC: H01L21/67

Abstract: A controller of a substrate processing apparatus executes: a first process in which a processing fluid is supplied to a processing container in a first period until a pressure in the processing container is increased and the processing fluid in the processing container reaches a supercritical state; a second process in which the processing fluid is supplied to the processing container at a flow rate larger than a flow rate of the processing fluid supplied to the first fluid ejector in the first process, in a second period; and a density adjustment process in which after ending of the first process and before starting of the second process, the density adjustment mechanism makes a difference between a density of the processing fluid present in the upstream region of a second opening/closing valve and a density of the processing fluid present in the processing container smaller than a predetermined threshold.

公开(公告)号：US20180096863A1

公开(公告)日：2018-04-05

申请号：US15718369

申请日：2017-09-28

Applicant: Tokyo Electron Limited

Inventor： Gentaro GOSHI ,  Hiromi KIYOSE ,  Yasuo KIYOHARA

IPC: H01L21/67 ,  B08B3/08 ,  F26B5/00

CPC classification number: H01L21/67034 ,  B08B3/08 ,  B08B7/0021 ,  F26B5/005 ,  H01L21/02057 ,  H01L21/02101

Abstract: Disclosed is a substrate liquid processing method including: a first processing step of discharging a fluid in the processing container until an inside of the processing container reaches a first discharge ultimate pressure at which the processing fluid in the supercritical state is not vaporized, and then supplying the processing fluid into the processing container until the inside of the processing container reaches a first supply ultimate pressure at which vaporization of the processing fluid does not occur; and a second processing step of discharging a fluid in the processing container until the inside of the processing container reaches a second discharge ultimate pressure at which the processing fluid in the supercritical state is not vaporized, and then supplying the processing fluid into the processing container until the inside of the processing container reaches a second supply ultimate pressure at which vaporization of the processing fluid does not occur.

公开(公告)号：US20130333726A1

公开(公告)日：2013-12-19

申请号：US13910270

申请日：2013-06-05

Applicant: Tokyo Electron Limited

Inventor： Gentaro GOSHI ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII ,  Takayuki TOSHIMA

IPC: B08B3/10

CPC classification number: B08B3/10 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109

Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.

Abstract translation: 本公开提供了一种基板处理装置，包括：处理室，被配置为处理基板; 流体供给源，其构造成以预定压力供给用于所述基板的处理中使用的基板处理流体; 恒定压力供给路径，被配置为以预定压力将所述基板处理流体从所述流体供给源供给到所述处理室，而不增加所述基板处理液体的压力; 增压压力供给路径，被配置为通过增压机构将衬底处理流体从流体供给源的压力升高到预定压力，并将增压的衬底处理流体供应到处理室; 以及控制单元，被配置为切换恒压供给路径和升压压力供给路径。