公开(公告)号：US20150328668A1

公开(公告)日：2015-11-19

申请号：US14713275

申请日：2015-05-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuya KOYAMA ,  Hiromi KIYOSE ,  Katsufumi MATSUKI ,  Shuhei TAKAHASHI ,  Hideki NISHIMURA ,  Takashi UNO ,  Hirotaka MARUYAMA

IPC: B08B9/032 ,  H01L21/67

CPC classification number: H01L21/67017 ,  B08B9/032 ,  H01L21/67023

Abstract: A substrate liquid treatment apparatus includes: at least one processing unit that processes a substrate with a treatment liquid; a storage tank that stores the treatment liquid; a circulation line through which the treatment liquid discharged from the storage tank into the circulation line is returned to the storage tank; a branch supply line that is branched from the circulation line to supply the treatment liquid to the processing unit; a recovery line that returns to the storage tank the treatment liquid having been supplied to the substrate in the processing unit; a distribution line connecting the circulation line and the recovery line; and a shutoff valve, provided on the distribution line, that is opened when cleaning of the recovery line is performed.

Abstract translation: 基板液体处理装置包括：至少一个处理单元，其用处理液处理基板; 存储处理液的储罐; 从储罐排入循环管线的处理液通过该循环管线返回到储罐; 分支供应管线，其从所述循环管线分支以将处理液体供应到所述处理单元; 回收管线，其将处理单元中已经供给到所述基板的处理液体返回到所述储存罐; 连接循环管线和回收管线的分配管线; 以及设置在分配线上的截止阀，其在清洁回收管线时被打开。

公开(公告)号：US20180096863A1

公开(公告)日：2018-04-05

申请号：US15718369

申请日：2017-09-28

Applicant: Tokyo Electron Limited

Inventor： Gentaro GOSHI ,  Hiromi KIYOSE ,  Yasuo KIYOHARA

IPC: H01L21/67 ,  B08B3/08 ,  F26B5/00

CPC classification number: H01L21/67034 ,  B08B3/08 ,  B08B7/0021 ,  F26B5/005 ,  H01L21/02057 ,  H01L21/02101

Abstract: Disclosed is a substrate liquid processing method including: a first processing step of discharging a fluid in the processing container until an inside of the processing container reaches a first discharge ultimate pressure at which the processing fluid in the supercritical state is not vaporized, and then supplying the processing fluid into the processing container until the inside of the processing container reaches a first supply ultimate pressure at which vaporization of the processing fluid does not occur; and a second processing step of discharging a fluid in the processing container until the inside of the processing container reaches a second discharge ultimate pressure at which the processing fluid in the supercritical state is not vaporized, and then supplying the processing fluid into the processing container until the inside of the processing container reaches a second supply ultimate pressure at which vaporization of the processing fluid does not occur.

公开(公告)号：US20200090958A1

公开(公告)日：2020-03-19

申请号：US16616062

申请日：2018-05-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiromi KIYOSE

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/02

Abstract: A substrate treatment device according to an embodiment includes: a liquid treatment part configured to supply a liquid onto a substrate to form a liquid film remaining in a liquid state on the substrate; an imaging part configured to capture an image of a front surface of the substrate, on which the liquid film remaining in the liquid state is formed; a determination part configured to determine a quality of a formation state of the liquid film based on the captured image of the substrate; and a post-treatment part configured to treat the substrate on which the liquid film is formed, when the determination part determines that the formation state of the liquid film is good.