摘要:
A solid-state image-sensing element 1 is fed with, from a coupling controller 4, a signal φSv that couples together the photoelectric conversion portions of every predetermined number of vertically adjacent pixels and a signal φSh that couples together the photoelectric conversion portions of every predetermined number of horizontally adjacent pixels. This sets the numbers of pixels of which the photoelectric conversion portions are coupled together horizontally and vertically. A pixel output controller 5 feeds a signal that controls the connection between the photoelectric conversion portion and the signal output portion in each pixel, and, within each group of pixels so coupled together, signals are outputted from one of those pixels.
摘要:
Solid-state image-sensing device for acquisition of sensed-image data is described. A photoelectric converter disconnecting switch is turned on to make a forcible reset switch perform resetting. Then, the logarithmic conversion MOS transistor is reset according to the threshold voltage thereof. Then, an output commensurate with the amount of light incident on the photoelectric converter is delivered. The photoelectric converter disconnecting switch is turned on to perform resetting and then turned off. Then, the voltage at the end of the logarithmic conversion MOS transistor that is not connected to the photoelectric converter disconnecting switch is reset according to its threshold voltage. This provides an output unrelated to the incident light. With this sequence of operations, variations in sensitivity among individual pixels can be corrected for without irradiation with uniform light.
摘要:
In a solid-state image-sensing device of the invention, for acquisition of sensed-image data, a photoelectric converter disconnecting switch is turned on to make a forcible reset switch perform resetting, then the voltage at the end of a logarithmic conversion MOS transistor that is not connected to the photoelectric converter disconnecting switch is so controlled that the logarithmic conversion MOS transistor is reset according to the threshold voltage thereof, and then an output commensurate with the amount of light incident on the photoelectric converter is delivered; for acquisition of noise data, the photoelectric converter disconnecting switch is turned on to make the forcible reset switch perform resetting, then the photoelectric converter disconnecting switch is turned off, then the voltage at the end of the logarithmic conversion MOS transistor that is not connected to the photoelectric converter disconnecting switch is so controlled that the logarithmic conversion MOS transistor is reset according to the threshold voltage thereof, and then an output unrelated to the amount of light incident on the photoelectric converter is delivered. With this sequence of operations, variations in sensitivity among individual pixels can be corrected for without irradiation with uniform light.
摘要:
A solid-state image-sensing element 1 is fed with, from a coupling controller 4, a signal φSv that couples together the photoelectric conversion portions of every predetermined number of vertically adjacent pixels and a signal φSh that couples together the photoelectric conversion portions of every predetermined number of horizontally adjacent pixels. This sets the numbers of pixels of which the photoelectric conversion portions are coupled together horizontally and vertically. A pixel output controller 5 feeds a signal that controls the connection between the photoelectric conversion portion and the signal output portion in each pixel, and, within each group of pixels so coupled together, signals are outputted from one of those pixels.
摘要:
When the brightness of a subject detected by a detecting device 4 is higher than a predetermined value, for example 700 [cd/m2], a switching judgment circuit 5 judges that an area sensor (solid-state image-sensing device) 3 should perform logarithmic conversion. In response to this judgment by the switching judgment circuit 5, a switching signal generating circuit 6 outputs a switching signal to instruct the area sensor 3 to perform logarithmic conversion. When the brightness of the subject detected by the detecting device 4 is lower than the predetermined value, for example 700 [cd/m2], a switching judgment circuit 5 judges that the area sensor 3 should perform linear conversion. In response to this judgment by the switching judgment circuit 5, the switching signal generating circuit 6 outputs a switching signal to instruct the area sensor 3 to perform linear conversion.
摘要:
When picking up an image using an image pickup device having a photoelectric conversion characteristic composed of a linear characteristic region and a logarithmic characteristic region, regardless of an image pickup mode and a recording mode, an image pickup apparatus always obtaining optimum images will be provided. An image pickup apparatus for recording any of an unprocessed image, an image subject to a predetermined image process and image compression, and an image subject to the predetermined image process, a wide dynamic range image processing, and image compression in accordance with the image pickup mode and recording mode, thereby always obtaining optimum images will be provided.
摘要:
In a solid-state image-sensing device, by global shuttering, whereby image sensing is performed simultaneously in all the pixels, a potential commensurate with the amount of light incident on a buried diode PD is held in an N-type floating diffusion region FD. Then a noise signal is outputted, and then the potential held in the N-type floating diffusion region FD is transferred to an N-type floating diffusion region FD1 so that an image signal is outputted.
摘要:
A scanning circuit operates at a driving speed approximately twice the conventional speed when clock signals having the same frequency as those in the prior art are supplied. By alternately driving the switches in even-numbered and odd-numbered transfer stages T1 to Tn, the input side and the output side of each transfer stage are simultaneously made high in order of T1, T2, . . . and Tn. Logical AND circuits are connected to the even- and odd-numbered stages to output pulse signals for scanning at intervals shorter than the clock period.
摘要:
In a solid-state image-sensing device, when an image sensing operation is performed in each pixel, a MOS transistor T1 is turned on and a MOS transistor T4 is turned off to make a MOS transistor T2 operate in a subthreshold region. When a reset operation is performed in each pixel, the MOS transistor T1 is turned off and the MOS transistor T4 is turned on to feed a constant voltage to the gate and drain of the MOS transistor T2. Then, the MOS transistor T4 is turned off, then the voltage at the node “a” is reset, and then a pulse signal φV is fed to a MOS transistor T5 to obtain an output. By using the thus obtained output as compensation data, variations in sensitivity among individual pixels are reduced.
摘要:
An object of the present invention is to provide a solid-state image sensing device configured to change a bias voltage given to the photoelectric converting section at the time of resetting so that an operative condition of the photoelectric converting section after the resetting can be maintained a constant condition regardless of an amount of the incident light. To achieve the object, an MOS transistor T5 is provided. The drain of the MOS transistor T5 is connected with a gate and a drain of an MOS transistor T2 and the source of the MOS transistor T5configured to be applied a DC voltage VRS. Here, a signal Φ V is given, an MOS transistor T4is turned on, and image data is output. A signal Φ RS is given and the MOS transistor T5 is turned on. As a result, a gate voltage Vg of the MOS transistor T2 is maintained as a constant voltage value. Then, a reset operation for pixels is stared.