公开(公告)号：US20090165853A1

公开(公告)日：2009-07-02

申请号：US12087067

申请日：2006-12-19

申请人： Toru Sawada ,  Yuko Tawada ,  Takashi Suezaki ,  Kenji Yamamoto

发明人： Toru Sawada ,  Yuko Tawada ,  Takashi Suezaki ,  Kenji Yamamoto

IPC分类号： H01L31/00

CPC分类号： H01L31/076 ,  H01L31/046 ,  Y02E10/548

摘要： The present invention makes it possible to provide a stacked-type thin-film photoelectric conversion device having high photostability, at a high yield rate and significantly reduced production costs. In a stacked-type photoelectric conversion device having an amorphous silicon-based photoelectric conversion unit and a crystalline silicon-based photoelectric conversion unit stacked thereon or vice versa, an amorphous photoelectric conversion layer included in the amorphous photoelectric conversion unit has a thickness of at least 0.03 μm and less than 0.17 μm, a crystalline photoelectric conversion layer included in the crystalline photoelectric conversion unit has a thickness of at least 0.2 μm and less than 1.0 μm, and a silicon oxide layer of a first conductivity type included in the amorphous photoelectric conversion unit and a silicon layer of a second conductivity type included in the crystalline photoelectric conversion unit make a junction.

摘要翻译： 本发明使得可以以高产率提供具有高光稳定性的堆叠型薄膜光电转换装置并显着降低生产成本。 在具有非晶硅基光电转换单元和层叠在其上的晶体硅基光电转换单元的叠层型光电转换装置中，反之亦然，非晶型光电转换单元中包含的非晶型光电转换层至少具有至少 0.03μm以上且小于0.17μm的结晶光电转换层的结晶光电转换层的厚度为0.2μm以上且小于1.0μm，并且包含在非晶光电转换中的第一导电类型的氧化硅层 单元和包括在晶体光电转换单元中的第二导电类型的硅层形成结。

公开(公告)号：US07851695B2

公开(公告)日：2010-12-14

申请号：US12087067

申请日：2006-12-19

申请人： Toru Sawada ,  Yuko Tawada ,  Takashi Suezaki ,  Kenji Yamamoto

发明人： Toru Sawada ,  Yuko Tawada ,  Takashi Suezaki ,  Kenji Yamamoto

IPC分类号： H01L31/00 ,  H02N6/00

CPC分类号： H01L31/076 ,  H01L31/046 ,  Y02E10/548

摘要： The present invention makes it possible to provide a stacked-type thin-film photoelectric conversion device having high photostability, at a high yield rate and significantly reduced production costs. In a stacked-type photoelectric conversion device having an amorphous silicon-based photoelectric conversion unit and a crystalline silicon-based photoelectric conversion unit stacked thereon or vice versa, an amorphous photoelectric conversion layer included in the amorphous photoelectric conversion unit has a thickness of at least 0.03 μm and less than 0.17 μm, a crystalline photoelectric conversion layer included in the crystalline photoelectric conversion unit has a thickness of at least 0.2 μm and less than 1.0 μm, and a silicon oxide layer of a first conductivity type included in the amorphous photoelectric conversion unit and a silicon layer of a second conductivity type included in the crystalline photoelectric conversion unit make a junction.

摘要翻译： 本发明使得可以以高产率提供具有高光稳定性的堆叠型薄膜光电转换装置并显着降低生产成本。 在具有非晶硅基光电转换单元和层叠在其上的晶体硅基光电转换单元的叠层型光电转换装置中，反之亦然，非晶型光电转换单元中包含的非晶型光电转换层至少具有至少 0.03μm以上且小于0.17μm的结晶光电转换层的结晶光电转换层的厚度为0.2μm以上且小于1.0μm，并且具有第一导电类型的氧化硅层包括在非晶形光电转换 单元和包括在晶体光电转换单元中的第二导电类型的硅层形成结。

公开(公告)号：US07678992B2

公开(公告)日：2010-03-16

申请号：US10543516

申请日：2004-05-28

申请人： Takashi Suezaki ,  Masashi Yoshimi ,  Toshiaki Sasaki ,  Yuko Tawada ,  Kenji Yamamoto

发明人： Takashi Suezaki ,  Masashi Yoshimi ,  Toshiaki Sasaki ,  Yuko Tawada ,  Kenji Yamamoto

IPC分类号： H01L31/00

CPC分类号： H01L31/076 ,  H01L31/046 ,  Y02E10/548

摘要： A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area. A thin film photoelectric converter of the present invention is preferably an integrated thin film photoelectric converter.

摘要翻译： 通过在包括晶体硅光电转换单元的薄膜光电转换器中控制开路电压和填充因子以不小而提供薄膜光电转换器，特别是具有改进的光电转换效率的集成薄膜光电转换器。 本发明的薄膜光电转换器至少在透明基板的一个主表面上依次形成透明电极膜，晶体硅光电转换单元和背面电极膜，并且转换器具有白色变色区域 形成晶体硅光电转换单元后的转换器表面的一部分。 白色变色区域的尺寸的百分比优选不大于光电转换区域的尺寸的5％。 本发明的薄膜光电转换器优选为集成薄膜光电转换器。

公开(公告)号：US20080185036A1

公开(公告)日：2008-08-07

申请号：US11791754

申请日：2005-11-09

申请人： Toshiaki Sasaki ,  Yohei Koi ,  Yuko Tawada ,  Takashi Suezaki ,  Kenji Yamamoto

发明人： Toshiaki Sasaki ,  Yohei Koi ,  Yuko Tawada ,  Takashi Suezaki ,  Kenji Yamamoto

IPC分类号： H01L31/04

CPC分类号： H01L31/076 ,  H01L31/02168 ,  H01L31/03529 ,  H01L31/0392 ,  Y02E10/548

摘要： An object of the present invention is to provide a substrate for a thin film photoelectric conversion device, in which its properties are not deteriorated when its surface unevenness is effectively increased, and then provide the thin film photoelectric conversion device having its performance improved by using the substrate.According to the present invention, by setting the surface area ratio of a transparent electrode layer in the substrate for the thin film photoelectric conversion device to at least 55% and at most 95%, the surface unevenness are effectively increased to increase the optical confinement effect, while deterioration in properties due to sharpening of the surface level variation is suppressed, whereby making it possible to provide a substrate for a thin film photoelectric conversion device, which can enhance output properties of the thin film photoelectric conversion device.

摘要翻译： 本发明的目的是提供一种用于薄膜光电转换装置的基板，其特征在其表面不均匀性有效提高时不劣化，然后提供其性能得到改善的薄膜光电转换装置 基质。 根据本发明，通过将薄膜光电转换元件用基板中的透明电极层的表面积比设定为至少55％以上且95％以下，能够有效地增加表面不均匀性，提高光学限制效果 ，同时由于表面水平变化的锐化而导致的性能劣化被抑制，从而可以提供可以提高薄膜光电转换装置的输出特性的薄膜光电转换装置用基板。

公开(公告)号：US20060097259A1

公开(公告)日：2006-05-11

申请号：US10543516

申请日：2004-05-28

申请人： Takashi Suezaki ,  Masashi Yoshimi ,  Toshiaki Sasaki ,  Yuko Tawada ,  Kenji Yamamoto

发明人： Takashi Suezaki ,  Masashi Yoshimi ,  Toshiaki Sasaki ,  Yuko Tawada ,  Kenji Yamamoto

IPC分类号： H01L29/76 ,  H01L29/10

CPC分类号： H01L31/076 ,  H01L31/046 ,  Y02E10/548

摘要： A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area. A thin film photoelectric converter of the present invention is preferably an integrated thin film photoelectric converter.

摘要翻译： 通过在包括晶体硅光电转换单元的薄膜光电转换器中控制开路电压和填充因子以不小而提供薄膜光电转换器，特别是具有改进的光电转换效率的集成薄膜光电转换器。 本发明的薄膜光电转换器至少在透明基板的一个主表面上依次形成透明电极膜，晶体硅光电转换单元和背面电极膜，并且转换器具有白色变色区域 形成晶体硅光电转换单元后的转换器表面的一部分。 白色变色区域的尺寸的百分比优选不大于光电转换区域的尺寸的5％。 本发明的薄膜光电转换器优选为集成薄膜光电转换器。

公开(公告)号：US20070169805A1

公开(公告)日：2007-07-26

申请号：US10588708

申请日：2005-03-15

申请人： Toshiaki Sasaki ,  Yohei Koi ,  Yuko Tawada ,  Kenji Yamamoto

发明人： Toshiaki Sasaki ,  Yohei Koi ,  Yuko Tawada ,  Kenji Yamamoto

IPC分类号： H01L31/00

CPC分类号： H01L31/03921 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/1884 ,  Y02E10/50

摘要： An inexpensive substrate for thin film solar cells having improved performance of a thin film solar cell, and a manufacturing method thereof are provided by increasing light trapping effect due to effective increase in unevenness of a substrate for thin film solar cells. Furthermore, a thin film solar cell having improved performance using the substrate is provided. A substrate for thin film solar cells of the present invention has a transparent insulating substrate and a transparent electrode layer deposited thereon including at least zinc oxide (ZnO), the transparent insulating substrate has a fine surface unevenness having a root-mean-square deviation of the surface (RMS) 5 to 50 nm in an interface by a side of the transparent electrode layer, a projected area thereof consists of a curved surface, and furthermore a haze ratio or a ratio of a diffuse transmittance to a total transmittance as an index of unevenness of a substrate may be set at not less than 20% measured using a C light source. And thereby light trapping effect may effectively occur to improve performance of the thin film solar cell.

摘要翻译： 通过提高薄膜太阳能电池基板的不均匀性的增加的光捕获效果，提供薄膜太阳能电池的性能提高的薄膜太阳能电池的便宜的基板，及其制造方法。 此外，提供了使用该基板具有改进的性能的薄膜太阳能电池。 本发明的薄膜太阳能电池用基板具有透明绝缘性基板和至少含有氧化锌（ZnO）的淀积的透明电极层，透明绝缘性基板具有平均值偏差为 通过透明电极层的一侧的界面中的5〜50nm的面（RMS），其投影面积由曲面构成，此外，雾度比或漫透射率与总透射率的比率为指标 可以将基板的不平坦度设定为使用C光源测量的不小于20％。 从而可以有效地发生光捕获效应，以改善薄膜太阳能电池的性能。

公开(公告)号：US07781668B2

公开(公告)日：2010-08-24

申请号：US10588708

申请日：2005-03-15

申请人： Toshiaki Sasaki ,  Yohei Koi ,  Yuko Tawada ,  Kenji Yamamoto

发明人： Toshiaki Sasaki ,  Yohei Koi ,  Yuko Tawada ,  Kenji Yamamoto

IPC分类号： H01L25/00

CPC分类号： H01L31/03921 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/1884 ,  Y02E10/50

摘要： An inexpensive substrate for thin film solar cells having improved performance of a thin film solar cell, and a manufacturing method thereof are provided by increasing light trapping effect due to effective increase in unevenness of a substrate for thin film solar cells. Furthermore, a thin film solar cell having improved performance using the substrate is provided. A substrate for thin film solar cells of the present invention has a transparent insulating substrate and a transparent electrode layer deposited thereon including at least zinc oxide (ZnO), the transparent insulating substrate has a fine surface unevenness having a root-mean-square deviation of the surface (RMS) 5 to 50 nm in an interface by a side of the transparent electrode layer, a projected area thereof consists of a curved surface, and furthermore a haze ratio or a ratio of a diffuse transmittance to a total transmittance as an index of unevenness of a substrate may be set at not less than 20% measured using a C light source. And thereby light trapping effect may effectively occur to improve performance of the thin film solar cell.

摘要翻译： 通过提高薄膜太阳能电池基板的不均匀性的增加的光捕获效果，提供薄膜太阳能电池的性能提高的薄膜太阳能电池的便宜的基板，及其制造方法。 此外，提供了使用该基板具有改进的性能的薄膜太阳能电池。 本发明的薄膜太阳能电池用基板具有透明绝缘性基板和至少含有氧化锌（ZnO）的淀积的透明电极层，透明绝缘性基板具有平均值偏差为 通过透明电极层的一侧的界面中的5〜50nm的面（RMS），其投影面积由曲面构成，此外，雾度比或漫透射率与总透射率的比率为指标 可以将基板的不平坦度设定为使用C光源测量的不小于20％。 从而可以有效地发生光捕获效应，以改善薄膜太阳能电池的性能。

公开(公告)号：US20050145972A1

公开(公告)日：2005-07-07

申请号：US10499176

申请日：2003-01-27

申请人： Susumu Fukuda ,  Yuko Tawada ,  Youhei Koi ,  Kenji Yamamoto

发明人： Susumu Fukuda ,  Yuko Tawada ,  Youhei Koi ,  Kenji Yamamoto

IPC分类号： C23C16/40 ,  H01L31/0236 ,  H01L31/04 ,  H01L31/075 ,  H01L31/076

CPC分类号： H01L31/076 ,  H01L31/02363 ,  H01L31/02366 ,  Y02E10/548

摘要： A tandem thin film photoelectric converter includes a transparent electrode, a plurality of photoelectric conversion units and back electrode deposited in sequence on a transparent insulating substrate. An intermediate layer for partially reflecting and transmitting light is inserted along at least one interface between the plurality of photoelectric conversion units. The intermediate layer has an average thickness in the range of 10 to 90 nanometers. The upper surface of the intermediate layer includes an uneven surface geometry having an average peak-to-peak pitch in the range of 10 to 50 nanometers.

摘要翻译： 串联薄膜光电转换器包括依次沉积在透明绝缘基板上的透明电极，多个光电转换单元和背电极。 用于部分反射和透射光的中间层沿着多个光电转换单元之间的至少一个界面被插入。 中间层的平均厚度在10至90纳米的范围内。 中间层的上表面包括平均峰 - 峰间距在10至50纳米范围内的不平坦表面几何形状。

公开(公告)号：US06759645B2

公开(公告)日：2004-07-06

申请号：US10181841

申请日：2002-07-19

申请人： Yuko Tawada ,  Kenji Yamamoto

发明人： Yuko Tawada ,  Kenji Yamamoto

IPC分类号： H01L3100

CPC分类号： H01L31/076 ,  H01L31/02363 ,  H01L31/02366 ,  Y02E10/548

摘要： A hybrid-type thin film photoelectric converter includes a transparent electrode (12), at least one amorphous photoelectric conversion unit (20), at least one crystalline photoelectric conversion unit (30) and a backside electrode (40), successively stacked on a transparent glass substrate (11). The transparent electrode (12) has a thickness of more than 400 nm and less than 1000 nm. A transparent laminated body (10) including the glass substrate (11) and the transparent electrode (12) has a haze ratio of more than 2% and less than 10%.

摘要翻译： 混合型薄膜光电转换器包括透明电极（12），至少一个非晶形光电转换单元（20），至少一个结晶光电转换单元（30）和背面电极（40） 玻璃基板（11）。 透明电极（12）的厚度大于400nm且小于1000nm。 包括玻璃基板（11）和透明电极（12）的透明层叠体（10）的雾度比大于2％且小于10％。

公开(公告)号：US07238545B2

公开(公告)日：2007-07-03

申请号：US10508044

申请日：2003-04-02

申请人： Masashi Yoshimi ,  Takashi Suezaki ,  Kenji Yamamoto

发明人： Masashi Yoshimi ,  Takashi Suezaki ,  Kenji Yamamoto

IPC分类号： H01L21/00

CPC分类号： H01L31/076 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit (3) on a substrate (1) in a deposition apparatus, taking out the substrate (1) having the photoelectric conversion unit (3) from the deposition apparatus to the air, introducing the substrate (1) into a deposition apparatus and carrying out plasma exposure processing on the substrate (1) in an atmosphere of a gas mixture containing an impurity for determining the conductivity type of the same conductivity type as that of the uppermost conductivity type layer (33) and hydrogen, forming a conductivity type intermediate layer (5) by additionally supplying semiconductor raw gas to the deposition apparatus, and then forming a subsequent photoelectric conversion unit (4).

摘要翻译： 制造串联型薄膜光电转换装置的方法包括以下步骤：在沉积装置中在基板（1）上形成至少一个光电转换单元（3），取出具有光电转换单元的基板（1） （3）从沉积设备到空气中，将基板（1）引入沉积设备中，并在含有杂质的气体混合物的气氛中对基板（1）进行等离子体曝光处理，以确定导电类型 通过向沉积设备另外提供半导体原料气体，然后形成后续的光电转换单元（4），形成导电型中间层（5），与最上面的导电型层（33）和氢的导电类型相同。