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    Solid-state imaging device, process of making solid state imaging device, digital still camera, digital video camera, mobile phone, and endoscope
    1.
    发明授权
    Solid-state imaging device, process of making solid state imaging device, digital still camera, digital video camera, mobile phone, and endoscope 有权
    固态成像装置，制造固态成像装置，数码相机，数码摄像机，手机和内窥镜的过程

    公开(公告)号：US08803211B2

    公开(公告)日：2014-08-12

    申请号：US13587769

    申请日：2012-08-16

    申请人： Toshihiro Nakatani ,  Takashi Goto ,  Yoshiki Maehara ,  Hideyuki Suzuki

    发明人： Toshihiro Nakatani ,  Takashi Goto ,  Yoshiki Maehara ,  Hideyuki Suzuki

    IPC分类号： H01L31/062

    CPC分类号： H04N5/3532 ,  H01L27/307 ,  H01L51/4273 ,  H01L51/448 ,  H04N5/363 ,  H04N5/3745 ,  H04N9/045 ,  Y02E10/549

    摘要： A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.

    摘要翻译： 固态成像装置包括像素阵列，每个像素包括：像素电极; 有机层; 对电极 密封层; 彩色滤光片; 一个读出电路; 和如本文所定义的光收集单元，光电层包含有机p型半导体和有机n型半导体，有机层还包括如本文所定义的电荷阻挡层，电荷阻挡层和电子的电离电位 有机n型半导体在光电层中的亲和力具有至少1eV的差异，并且密封层包括通过原子层沉积形成的第一密封子层和通过物理气相沉积形成的第二密封子层，并且包含金属 氧化物，金属氮化物和金属氮氧化物。

    Solid-state imaging device, process of making solid state imaging device, digital still camera, digital video camera, mobile phone, and endoscope
    2.
    发明授权
    Solid-state imaging device, process of making solid state imaging device, digital still camera, digital video camera, mobile phone, and endoscope 有权
    固态成像装置，制造固态成像装置，数码相机，数码摄像机，手机和内窥镜的过程

    公开(公告)号：US08378397B2

    公开(公告)日：2013-02-19

    申请号：US12870321

    申请日：2010-08-27

    申请人： Toshihiro Nakatani ,  Takashi Goto ,  Yoshiki Maehara ,  Hideyuki Suzuki

    发明人： Toshihiro Nakatani ,  Takashi Goto ,  Yoshiki Maehara ,  Hideyuki Suzuki

    IPC分类号： H01L31/062

    CPC分类号： H04N5/3532 ,  H01L27/307 ,  H01L51/4273 ,  H01L51/448 ,  H04N5/363 ,  H04N5/3745 ,  H04N9/045 ,  Y02E10/549

    摘要： A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.

    摘要翻译： 固态成像装置包括像素阵列，每个像素包括：像素电极; 有机层; 对电极 密封层; 彩色滤光片; 读出电路; 和如本文所定义的光收集单元，光电层包含有机p型半导体和有机n型半导体，有机层还包括如本文所定义的电荷阻挡层，电荷阻挡层和电子的电离势 有机n型半导体在光电层中的亲和力具有至少1eV的差异，并且密封层包括通过原子层沉积形成的第一密封子层和通过物理气相沉积形成的第二密封子层，并且包含金属 氧化物，金属氮化物和金属氮氧化物。

    Solid-state imaging device and process of making solid state imaging device
    3.
    发明授权
    Solid-state imaging device and process of making solid state imaging device 有权
    固态成像装置和制作固态成像装置的过程

    公开(公告)号：US08232616B2

    公开(公告)日：2012-07-31

    申请号：US12870366

    申请日：2010-08-27

    申请人： Yoshiki Maehara ,  Takashi Goto ,  Hideyuki Suzuki ,  Daigo Sawaki

    发明人： Yoshiki Maehara ,  Takashi Goto ,  Hideyuki Suzuki ,  Daigo Sawaki

    IPC分类号： H01L27/146 ,  H01L51/00

    CPC分类号： H01L27/307 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14692 ,  H01L51/0053 ,  H01L51/0059 ,  H01L51/4273 ,  Y02E10/549 ,  Y02P70/521

    摘要： A solid state imaging device includes an array of pixels, each of the pixels includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; and a readout circuit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer have a difference of at least 1 eV, and the solid-state imaging device further includes a transparent partition wall between adjacent color filters of adjacent pixels of the array of pixels, the partition wall being made from a transparent material having a lower refractive index than a material forming the color filters.

    摘要翻译： 固态成像装置包括像素阵列，每个像素包括：像素电极; 有机层; 对电极 密封层; 彩色滤光片; 以及如本文所定义的读出电路，光电层包含有机p型半导体和有机n型半导体，电荷阻挡层的电离电位和有机n型半导体在光电层中的电子亲和力具有 至少1eV，并且所述固态成像装置还包括在像素阵列的相邻像素的相邻滤色器之间的透明分隔壁，所述分隔壁由折射率低于形成所述像素的材料的透明材料制成 滤色片

    Process of making a solid state imaging device
    4.
    发明授权
    Process of making a solid state imaging device 有权
    制作固态成像装置的过程

    公开(公告)号：US08704281B2

    公开(公告)日：2014-04-22

    申请号：US13392587

    申请日：2010-08-27

    申请人： Yoshiki Maehara ,  Takashi Goto ,  Hideyuki Suzuki

    发明人： Yoshiki Maehara ,  Takashi Goto ,  Hideyuki Suzuki

    IPC分类号： H01L31/113

    CPC分类号： H01L27/307 ,  B82Y10/00 ,  H01L51/001 ,  H01L51/0047 ,  H01L51/0059 ,  H01L51/4253

    摘要： A solid-state imaging device includes a substrate, a dielectric layer on the substrate, and an array of pixels, each of the pixels includes: a pixel electrode, an organic layer, a counter electrode, a sealing layer, a color filter, a readout circuit and a light-collecting unit as defined herein, the photoelectric layer contains an organic p-type semiconductor and an organic n-type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n-type semiconductor present in the photoelectric layer have a difference of at least 1 eV, and a surface of the pixel electrodes on a side of the photoelectric layer and a surface of the dielectric layer on a side of the photoelectric layer are substantially coplanar.

    摘要翻译： 一种固态成像装置，包括基板，基板上的电介质层和像素阵列，每个像素包括：像素电极，有机层，对电极，密封层，滤色器， 读出电路和如本文所定义的光收集单元，光电层包含有机p型半导体和有机n型半导体，有机层还包括如本文所定义的电荷阻挡层，电荷阻挡的电离电位 层和存在于光电层中的有机n型半导体的电子亲和力具有至少1eV的差异，以及光电层一侧的像素电极的表面和侧面上的电介质层的表面 的光电层基本上共面。

    Process of making a solid state imaging device
    5.
    发明授权
    Process of making a solid state imaging device 有权

    公开(公告)号：US08637911B2

    公开(公告)日：2014-01-28

    申请号：US13392587

    申请日：2010-08-27

    申请人： Yoshiki Maehara ,  Takashi Goto ,  Hideyuki Suzuki

    发明人： Yoshiki Maehara ,  Takashi Goto ,  Hideyuki Suzuki

    IPC分类号： H01L31/113

    摘要： A solid-state imaging device includes a substrate, a dielectric layer on the substrate, and an array of pixels, each of the pixels includes: a pixel electrode, an organic layer, a counter electrode, a sealing layer, a color filter, a readout circuit and a light-collecting unit as defined herein, the photoelectric layer contains an organic p-type semiconductor and an organic n-type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n-type semiconductor present in the photoelectric layer have a difference of at least 1 eV, and a surface of the pixel electrodes on a side of the photoelectric layer and a surface of the dielectric layer on a side of the photoelectric layer are substantially coplanar.

    SOLID-STATE IMAGING DEVICE, PROCESS OF MAKING SOLID STATE IMAGING DEVICE, DIGITAL STILL CAMERA, DIGITAL VIDEO CAMERA, MOBILE PHONE, AND ENDOSCOPE
    6.
    发明申请
    SOLID-STATE IMAGING DEVICE, PROCESS OF MAKING SOLID STATE IMAGING DEVICE, DIGITAL STILL CAMERA, DIGITAL VIDEO CAMERA, MOBILE PHONE, AND ENDOSCOPE 有权
    固态成像装置，制造固态成像装置的方法，数码相机，数字视频摄像机，移动电话和内窥镜

    公开(公告)号：US20120161270A1

    公开(公告)日：2012-06-28

    申请号：US13392587

    申请日：2010-08-27

    申请人： Yoshiki Maehara ,  Takashi Goto ,  Hideyuki Suzuki

    发明人： Yoshiki Maehara ,  Takashi Goto ,  Hideyuki Suzuki

    IPC分类号： H01L31/0232 ,  H01L31/18

    CPC分类号： H01L27/307 ,  B82Y10/00 ,  H01L51/001 ,  H01L51/0047 ,  H01L51/0059 ,  H01L51/4253

    摘要： A solid-state imaging device includes a substrate, a dielectric layer on the substrate, and an array of pixels, each of the pixels includes: a pixel electrode, an organic layer, a counter electrode, a sealing layer, a color filter, a readout circuit and a light-collecting unit as defined herein, the photoelectric layer contains an organic p-type semiconductor and an organic n-type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n-type semiconductor present in the photoelectric layer have a difference of at least 1 eV, and a surface of the pixel electrodes on a side of the photoelectric layer and a surface of the dielectric layer on a side of the photoelectric layer are substantially coplanar.

    摘要翻译： 一种固态成像装置，包括基板，基板上的电介质层和像素阵列，每个像素包括：像素电极，有机层，对电极，密封层，滤色器， 读出电路和如本文所定义的光收集单元，光电层包含有机p型半导体和有机n型半导体，有机层还包括如本文所定义的电荷阻挡层，电荷阻挡的电离电位 层和存在于光电层中的有机n型半导体的电子亲和力具有至少1eV的差异，以及光电层一侧的像素电极的表面和侧面上的电介质层的表面 的光电层基本上共面。

    ELECTRIC MOTOR
    8.
    发明申请
    ELECTRIC MOTOR 审中-公开
    电动马达

    公开(公告)号：US20130328424A1

    公开(公告)日：2013-12-12

    申请号：US14001467

    申请日：2011-07-08

    申请人： Takashi Goto

    发明人： Takashi Goto

    IPC分类号： H02K5/18 ,  H02K5/22

    CPC分类号： H02K5/18 ,  H02K5/22 ,  H02K5/225 ,  H02K9/22 ,  H02K11/225 ,  H02K11/33

    摘要： A power element 22 is mounted on a board 21 outside an electric motor body 10 when viewed from an axial direction X. Heat produced by the power element 22 is conducted to a heat mass 32 formed outside the electric motor body 10 when similarly viewed from the axial direction X in a portion opposed to the power element 22, and radiated from a board-side heat radiating fin 33, and is also conducted through an uneven structure 42 which surrounds the power element 22 and radiated from a cover 40.

    摘要翻译： 功率元件22从轴向方向X观察时安装在电动机主体10的外侧的基板21上。当从电动元件22观察时，由功率元件22产生的热量传导到形成在电动机主体10外部的热质体32 轴向方向X在与功率元件22相对的部分中，并且从板侧散热片33辐射，并且还通过围绕功率元件22并从盖40辐射的不平坦结构42传导。

    Solid-state imaging device and imaging apparatus
    9.
    发明授权
    Solid-state imaging device and imaging apparatus 有权
    固态成像装置和成像装置

    公开(公告)号：US08368788B2

    公开(公告)日：2013-02-05

    申请号：US13109507

    申请日：2011-05-17

    申请人： Takashi Goto

    发明人： Takashi Goto

    IPC分类号： H04N3/14 ,  H04N5/335

    CPC分类号： H04N5/335 ,  H01L27/14609 ,  H01L27/14647 ,  H01L27/14667 ,  H04N5/355 ,  H04N5/3698 ,  H04N5/374

    摘要： A solid-state imaging device includes a photoelectric conversion layer, a MOS transistor circuit. The photoelectric conversion layer is formed over a semiconductor substrate. The MOS transistor circuit reads out a signal corresponding to charges generated in the photoelectric conversion layer and then collected, and that is formed in the semiconductor substrate, the charges having a given polarity. The MOS transistor circuit includes a charge accumulation portion, a reset transistor, and an output transistor. The charge accumulation portion is electrically connected with the photoelectric conversion layer. The reset transistor resets a potential of the charge accumulation portion to a reset potential. The output transistor outputs a signal corresponding to the potential of the charge accumulation portion. The reset transistor and the output transistor have carriers whose polarity is opposite to the given polarity. In the MOS transistor circuit, following formula (1) is satisfied: GND

    摘要翻译： 固态成像装置包括光电转换层，MOS晶体管电路。 光电转换层形成在半导体衬底上。 MOS晶体管电路读出与光电转换层中产生的电荷对应的信号，然后在半导体衬底中形成具有给定极性的电荷。 MOS晶体管电路包括电荷累积部分，复位晶体管和输出晶体管。 电荷累积部分与光电转换层电连接。 复位晶体管将电荷累积部分的电位复位到复位电位。 输出晶体管输出对应于电荷累积部分的电位的信号。 复位晶体管和输出晶体管具有极性与给定极性相反的载流子。 在MOS晶体管电路中，满足以下公式（1）：GND

    NETWORK PRINTER AND PRINTING METHOD USING SAME
    10.
    发明申请
    NETWORK PRINTER AND PRINTING METHOD USING SAME 审中-公开
    网络打印机和打印方法

    公开(公告)号：US20120307263A1

    公开(公告)日：2012-12-06

    申请号：US13473779

    申请日：2012-05-17

    申请人： Takashi Ichikawa ,  Kaoru Uematsu ,  Takashi Goto

    发明人： Takashi Ichikawa ,  Kaoru Uematsu ,  Takashi Goto

    IPC分类号： G06K15/02 ,  G06F3/12

    CPC分类号： G06F3/1247 ,  G06F3/1208 ,  G06F3/1285 ,  G06K15/1806 ,  G06K15/405 ,  Y02D10/1592

    摘要： A printing method, comprising: determining whether or not a printer is capable of executing a printing command sent from a user terminal to the printer through a first communication channel; requesting a cloud computer through a second communication channel to provide an information needed to execute the printing command if the printer is not capable of executing the printing command; and executing the printing command after the information needed to execute the printing command is downloaded to the printer from the cloud computer.

    摘要翻译： 一种打印方法，包括：确定打印机是否能够通过第一通信信道执行从用户终端发送到打印机的打印命令; 如果打印机不能执行打印命令，请求云计算机通过第二通信信道提供执行打印命令所需的信息; 并且在执行打印命令所需的信息从云计算机下载到打印机之后执行打印命令。