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75 条记录 (耗时 0.012 秒)

    Non-volatile semiconductor memory device and process of manufacturing the same
    1.
    发明授权
    Non-volatile semiconductor memory device and process of manufacturing the same 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US07948038B2

    公开(公告)日：2011-05-24

    申请号：US12789224

    申请日：2010-05-27

    申请人： Toshitake Yaegashi ,  Koki Ueno

    发明人： Toshitake Yaegashi ,  Koki Ueno

    IPC分类号： H01L27/088

    CPC分类号： H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

    摘要： In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film.

    摘要翻译： 在器件隔离沟槽中，第一器件隔离绝缘膜形成为具有凹槽，并且在凹部中形成第二器件隔离绝缘膜。 第一器件隔离绝缘膜的两端的最上部位于比第二器件隔离绝缘膜的两端的最上部更高位置。

    Non-volatile semiconductor memory device and process of manufacturing the same
    2.
    发明授权
    Non-volatile semiconductor memory device and process of manufacturing the same 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US07732873B2

    公开(公告)日：2010-06-08

    申请号：US12367590

    申请日：2009-02-09

    申请人： Toshitake Yaegashi ,  Koki Ueno

    发明人： Toshitake Yaegashi ,  Koki Ueno

    IPC分类号： H01L29/76

    CPC分类号： H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

    摘要： In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film.

    摘要翻译： 在器件隔离沟槽中，第一器件隔离绝缘膜形成为具有凹槽，并且在凹部中形成第二器件隔离绝缘膜。 第一器件隔离绝缘膜的两端的最上部位于比第二器件隔离绝缘膜的两端的最上部更高位置。

    Non-volatile semiconductor memory device and process of manufacturing the same
    5.
    发明授权
    Non-volatile semiconductor memory device and process of manufacturing the same 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US08217468B2

    公开(公告)日：2012-07-10

    申请号：US13112769

    申请日：2011-05-20

    申请人： Toshitake Yaegashi ,  Koki Ueno

    发明人： Toshitake Yaegashi ,  Koki Ueno

    IPC分类号： H01L29/76

    CPC分类号： H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

    摘要： In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film.

    摘要翻译： 在器件隔离沟槽中，第一器件隔离绝缘膜形成为具有凹槽，并且在凹部中形成第二器件隔离绝缘膜。 第一器件隔离绝缘膜的两端的最上部位于比第二器件隔离绝缘膜的两端的最上部更高位置。

    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND PROCESS OF MANUFACTURING THE SAME
    6.
    发明申请
    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND PROCESS OF MANUFACTURING THE SAME 有权
    非挥发性半导体存储器件及其制造方法

    公开(公告)号：US20090149011A1

    公开(公告)日：2009-06-11

    申请号：US12367590

    申请日：2009-02-09

    申请人： Toshitake YAEGASHI ,  Koki Ueno

    发明人： Toshitake YAEGASHI ,  Koki Ueno

    IPC分类号： H01L21/3205

    CPC分类号： H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

    摘要： In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film.

    摘要翻译： 在器件隔离沟槽中，第一器件隔离绝缘膜形成为具有凹槽，并且在凹部中形成第二器件隔离绝缘膜。 第一器件隔离绝缘膜的两端的最上部位于比第二器件隔离绝缘膜的两端的最上部更高位置。

    Non-volatile semiconductor memory device and process of manufacturing the same
    7.
    发明授权
    Non-volatile semiconductor memory device and process of manufacturing the same 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US07504304B2

    公开(公告)日：2009-03-17

    申请号：US11580929

    申请日：2006-10-16

    申请人： Toshitake Yaegashi ,  Koki Ueno

    发明人： Toshitake Yaegashi ,  Koki Ueno

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

    摘要： In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film.

    摘要翻译： 在器件隔离沟槽中，第一器件隔离绝缘膜形成为具有凹槽，并且在凹部中形成第二器件隔离绝缘膜。 第一器件隔离绝缘膜的两端的最上部位于比第二器件隔离绝缘膜的两端的最上部更高位置。

    Vehicle shift control system
    10.
    发明授权
    Vehicle shift control system 有权

    公开(公告)号：US10166953B2

    公开(公告)日：2019-01-01

    申请号：US13510967

    申请日：2010-11-05

    申请人： Takahiko Tsutsumi ,  Keisuke Sekiya ,  Koki Ueno ,  Ichiro Kitaori ,  Toshinari Suzuki

    发明人： Takahiko Tsutsumi ,  Keisuke Sekiya ,  Koki Ueno ,  Ichiro Kitaori ,  Toshinari Suzuki

    IPC分类号： B60T1/00 ,  B60L11/14 ,  F16H63/48 ,  B60L11/18 ,  F16H63/42 ,  F16H59/74

    摘要： When a P lock state is set on the basis of a predetermined request signal for setting the P lock state, a P position indicator lamp (62) is turned on or off on the basis of the status of power supplied to the vehicle (10). For example, when the P lock state is set, the P position indicator lamp (62) is turned off when the power status is an ALL-OFF status where a combination meter (56), or the like, is not turned on or is raised to an ACC-ON status; whereas, when the P lock state is set, the P position indicator lamp (62) is turned on when the power status is an IG-ON status, when the power status is changed from the IG-ON status during vehicle driving to the ACC-ON status, or within a predetermined period of time from when the power status is changed from the IG-ON status to the ALL-OFF status.