公开(公告)号：US11935936B2

公开(公告)日：2024-03-19

申请号：US17055852

申请日：2019-03-28

Applicant: ULVAC, INC.

Inventor： Yuusuke Ujihara ,  Motoshi Kobayashi ,  Yasuhiko Akamatsu ,  Tomohiro Nagata ,  Ryouta Nakamura ,  Junichi Nitta ,  Yasuo Nakadai

IPC: H01L29/49 ,  C22C21/00 ,  C22F1/04 ,  C23C14/14 ,  H01L21/285 ,  C23C14/34

CPC classification number: H01L29/49 ,  C22C21/00 ,  C22F1/04 ,  C23C14/14 ,  H01L21/285 ,  C23C14/34

Abstract: [Object] It is an object of the present invention to provide an aluminum alloy film having excellent bending resistance and heat resistance, and a thin film transistor including the aluminum alloy film.
[Solving Means] In order to achieve the above-mentioned object, an aluminum alloy film according to an embodiment of the present invention includes: an Al pure metal that includes at least one type of a first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb, and Ti. A content of the first additive element is 0.01 atomic % or more and 1.0 atomic % or less. Such an aluminum alloy film has excellent bending resistance and excellent heat resistance. Further, also etching can be performed on the aluminum alloy film.

公开(公告)号：US11335782B2

公开(公告)日：2022-05-17

申请号：US17253257

申请日：2019-06-19

Applicant: ULVAC, INC.

Inventor： Taku Hanna ,  Motoshi Kobayashi ,  Jungo Onoda

IPC: H01L29/24 ,  H01L29/786 ,  C23C14/08 ,  C23C14/34 ,  H01L21/02 ,  H01L29/66 ,  H01L27/12

Abstract: [Solving Means] An oxide semiconductor thin film according to an embodiment of the present invention includes: an oxide semiconductor that mainly contains In, Sn, and Ge. An atom ratio of Ge/(In+Sn+Ge) is 0.07 or more and 0.40 or less. As a result, it is possible to achieve transistor characteristics with a mobility of 10 cm2/Vs or more.

公开(公告)号：US11049976B2

公开(公告)日：2021-06-29

申请号：US15777081

申请日：2016-11-22

Applicant: ULVAC, INC.

Inventor： Mitsuru Ueno ,  Junya Kiyota ,  Motoshi Kobayashi ,  Masaki Takei ,  Kazutoshi Takahashi ,  Koji Hidaka ,  Yuu Kawagoe ,  Kentarou Takesue ,  Masaru Wada

IPC: H01L29/786 ,  C23C14/08 ,  H01L21/02 ,  C23C14/34 ,  H01L29/66 ,  H01J37/34

Abstract: A thin-film transistor according to an embodiment of the present invention includes: a gate electrode; an active layer formed of an oxide containing indium, zinc, and titanium; a gate insulating film formed between the gate electrode and the active layer; and a source electrode and a drain electrode that are electrically connected to the active layer. Atomic proportions of elements relative to the total quantity of indium, zinc, and titanium that constitute the oxide may be not less than 24 at. % and not more than 80 at. % for indium, not less than 16 at. % and not more than 70 at. % for zinc, and not less than 0.1 at. % and not more than 20 at. % for titanium.