公开(公告)号：US20180331040A1

公开(公告)日：2018-11-15

申请号：US16040752

申请日：2018-07-20

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GlobalFoundries, Inc.

发明人： Takashi Ando ,  Hiroaki Niimi ,  Tenko Yamashita

IPC分类号： H01L23/535 ,  H01L21/768 ,  H01L21/02 ,  H01L29/51 ,  H01L21/8238 ,  H01L27/092

CPC分类号： H01L23/535 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/285 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76846 ,  H01L21/76877 ,  H01L21/823871 ,  H01L23/485 ,  H01L27/092 ,  H01L29/517 ,  H01L29/66545

摘要： A method of making a semiconductor device includes forming a first source/drain trench and a second source/drain trench over a first and second source/drain region, respectively; forming a first silicon dioxide layer in the first source/drain trench and a second silicon dioxide layer in the second source/drain trench; forming a first source/drain contact over the first source/drain region, the first source/drain contact including a first tri-layer contact disposed between the first silicon dioxide layer and a first conductive material; and forming a second source/drain contact over the second source/drain region, the second source/drain contact including a second tri-layer contact disposed between the second silicon dioxide layer and a second conductive material; wherein the first tri-layer contact includes a first metal oxide layer in contact with the first silicon dioxide layer, and the second tri-layer contact includes a second metal oxide layer in contact with the second silicon dioxide layer.

公开(公告)号：US20180277390A1

公开(公告)日：2018-09-27

申请号：US15687992

申请日：2017-08-28

申请人： Kabushiki Kaisha Toshiba

发明人： Tsutomu NAKANISHI ,  Yusuke Tanaka ,  Atsushi Hieno ,  Yasuhito Yoshimizu ,  Akihiko Happoya

IPC分类号： H01L21/3213 ,  H01L21/033 ,  H01L21/311

CPC分类号： H01L21/32134 ,  H01L21/0332 ,  H01L21/285 ,  H01L21/3081 ,  H01L21/31144

摘要： A metal pattern forming method according to an embodiment includes forming a metal film on a surface of a substrate by an electroless plating method, the substrate including a first layer including a protrusion and a recess, and a film thickness of the metal film being a half or more of a width of the recess; and performing wet etching, the metal film in the recess removed by the wet etching and the metal film on the protrusion remained after the wet etching.

公开(公告)号：US10077282B2

公开(公告)日：2018-09-18

申请号：US15558262

申请日：2016-05-09

申请人： TANAKA KIKINZOKU KOGYO K.K.

发明人： Ryosuke Harada ,  Toshiyuki Shigetomi ,  Kazuharu Suzuki ,  Shunichi Nabeya ,  Akiko Kumakura ,  Tatsutaka Aoyama ,  Takayuki Sone

IPC分类号： H01L21/31 ,  C07F15/00 ,  C23C16/18 ,  H01L21/285 ,  C09D5/24

CPC分类号： C07F15/0086 ,  C07F15/00 ,  C09D5/24 ,  C23C16/18 ,  H01L21/285 ,  H01L21/28568 ,  H01L21/31

摘要： The present invention relates to a raw material for chemical deposition shown in a formulae below and including an organoplatinum compound in which diimine containing two imines and an alkyl anion are coordinated to divalent platinum. In the formulae, each of substituents R1 to R4 on the diimine represents a hydrogen atom, an alkyl group or the like and has a carbon number of 5 or less. Each of alkyl anions R5 and R6 is an alkyl group having a carbon number of 1 or more and 3 or less. The raw material has high vapor pressure and low decomposition temperature, and thus it is possible to manufacture a platinum thin film at low temperature.

公开(公告)号：US20180226482A1

公开(公告)日：2018-08-09

申请号：US15943790

申请日：2018-04-03

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Peng-Soon Lim ,  Da-Yuan Lee ,  Kuang-Yuan Hsu

IPC分类号： H01L29/423 ,  H01L21/8234 ,  H01L21/28 ,  H01L29/49 ,  H01L21/311 ,  H01L21/285 ,  H01L29/51

CPC分类号： H01L29/42376 ,  H01L21/28114 ,  H01L21/28247 ,  H01L21/285 ,  H01L21/2855 ,  H01L21/31105 ,  H01L21/823456 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

摘要： A device comprises a metal gate structure over a substrate, wherein the metal gate structure comprises a first metal sidewall, a metal bottom layer, a first corner portion between the first metal sidewall and the metal bottom layer, wherein the first corner portion comprises a first step and a first ramp, a second metal sidewall and a second corner portion between the second metal sidewall and the metal bottom layer, wherein the second corner portion comprises a second step and a second ramp.

公开(公告)号：US20180223416A1

公开(公告)日：2018-08-09

申请号：US15749937

申请日：2016-06-03

申请人： KOBELCO RESEARCH INSTITUTE, INC.

发明人： Hiromi MATSUMURA

IPC分类号： C23C14/34 ,  H01L21/285

CPC分类号： C23C14/3407 ,  C22C21/00 ,  C23C14/165 ,  C23C14/3414 ,  H01L21/285

摘要： Provided is a sputtering target that can reduce the occurrence of flaws while having the same level of conductivity as a conventional aluminum sputtering target. The aluminum sputtering target contains 0.005 atomic % to 0.04 atomic % of Ni; and 0.005 atomic % to 0.06 atomic % of La, with the balance being Al and inevitable impurities.

公开(公告)号：US20180204768A1

公开(公告)日：2018-07-19

申请号：US15922291

申请日：2018-03-15

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Kimihiko Nakatani

IPC分类号： H01L21/768 ,  H01L21/285 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02

CPC分类号： H01L21/76876 ,  C23C16/045 ,  C23C16/14 ,  C23C16/34 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/52 ,  H01L21/02271 ,  H01L21/285

摘要： Described herein is a technique capable of forming a film having excellent step coverage and superior filling properties. According to the technique, there is provided a method of manufacturing a semiconductor device including: (a) preparing a substrate provided with a groove having thereon a base film selected from a group consisting of a metal nitride film and an insulating film; and (b) performing a cycle a predetermined number of time to selectively form a first metal, film at a lower portion of the groove with the base film at an upper portion of the groove exposed, the cycle including: (b-1) supplying a first reducing gas to the substrate; and (b-2) supplying a first, metal-containing gas to the substrate, wherein (b-1) an (b-2) are non-simultaneously performed, and a supply condition of the first reducing gas in (b-1) is adjusted according to am aspect ratio of the groove.

公开(公告)号：US09994593B2

公开(公告)日：2018-06-12

申请号：US15306812

申请日：2015-04-08

申请人： ADEKA CORPORATION

发明人： Tomoharu Yoshino ,  Masaki Enzu ,  Atsushi Sakurai ,  Akihiro Nishida ,  Makoto Okabe

IPC分类号： C07F1/08 ,  C07C215/08 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/455

CPC分类号： C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285

摘要： This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

公开(公告)号：US20180006141A1

公开(公告)日：2018-01-04

申请号：US15597650

申请日：2017-05-17

申请人： International Business Machines Corporation ,  GlobalFoundries, Inc.

发明人： Jody Fronheiser ,  Shogo Mochizuki ,  Hiroaki Niimi ,  Balasubramanian Pranatharthiharan ,  Mark Raymond ,  Tenko Yamashita

IPC分类号： H01L29/66 ,  H01L21/768 ,  H01L21/285 ,  H01L23/535 ,  H01L21/02

CPC分类号： H01L21/76895 ,  H01L21/02068 ,  H01L21/285 ,  H01L21/28525 ,  H01L21/76814 ,  H01L21/76831 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/0895 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/66795 ,  H01L29/785

摘要： Forming a contact is disclosed. A trench through an interlayer dielectric layer is opened down to a substrate. The interlayer dielectric layer is formed on the substrate such that the substrate is the bottom surface of the trench. A cleaning process of the trench is performed. The bottom surface of the trench is recessed. A trench contact epitaxial layer is formed in the trench. An oxide layer is formed on top of the trench contact epitaxial layer in the trench. A metal oxide layer is formed on top of the oxide layer in the trench. A metal contact is formed on top of the metal oxide layer, where the oxide layer and the metal oxide layer together form a dipole layer.

公开(公告)号：US20170301767A1

公开(公告)日：2017-10-19

申请号：US15641861

申请日：2017-07-05

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES INC.

发明人： Hiroaki Niimi ,  Shariq Siddiqui ,  Tenko Yamashita

IPC分类号： H01L29/45 ,  H01L21/02 ,  H01L29/08 ,  H01L27/092 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/285 ,  H01L29/161 ,  H01L29/417

CPC分类号： H01L21/76843 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/285 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76895 ,  H01L21/823814 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/535 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41725 ,  H01L29/41783 ,  H01L29/45 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/7848

摘要： An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an aluminum titanium and silicon alloy and a first tungsten fill. A second device contact is in contact with at least one of the silicon containing source and drain region of the second semiconductor device including a material stack of a titanium oxide layer and a titanium layer. The second device contact may further include a second tungsten fill.

公开(公告)号：US20170287777A1

公开(公告)日：2017-10-05

申请号：US15091138

申请日：2016-04-05

申请人： GLOBALFOUNDRIES Inc.

发明人： Suraj K. Patil ,  Zhiguo Sun ,  Keith Tabakman

IPC分类号： H01L21/768 ,  H01L29/417 ,  H01L29/66

CPC分类号： H01L29/41725 ,  H01L21/285 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76859 ,  H01L21/76864 ,  H01L21/76897 ,  H01L21/823871 ,  H01L23/485 ,  H01L29/66477

摘要： One method disclosed herein includes performing a plurality of conformal deposition processes to form first, second and third layers of material within a contact opening, wherein the first layer comprises a contact insulating material, the second layer comprises a metal-containing material and the third layer comprises a conductive cap material, wherein the third layer is positioned above the second layer. The method further includes forming a contact ion implant region that is positioned at least partially in at least one of the first, second or third layers of material, forming a conductive material above the third layer and removing portions of the layers of material positioned outside of the contact opening.