公开(公告)号：US11935936B2

公开(公告)日：2024-03-19

申请号：US17055852

申请日：2019-03-28

Applicant: ULVAC, INC.

Inventor： Yuusuke Ujihara ,  Motoshi Kobayashi ,  Yasuhiko Akamatsu ,  Tomohiro Nagata ,  Ryouta Nakamura ,  Junichi Nitta ,  Yasuo Nakadai

IPC: H01L29/49 ,  C22C21/00 ,  C22F1/04 ,  C23C14/14 ,  H01L21/285 ,  C23C14/34

CPC classification number: H01L29/49 ,  C22C21/00 ,  C22F1/04 ,  C23C14/14 ,  H01L21/285 ,  C23C14/34

Abstract: [Object] It is an object of the present invention to provide an aluminum alloy film having excellent bending resistance and heat resistance, and a thin film transistor including the aluminum alloy film.
[Solving Means] In order to achieve the above-mentioned object, an aluminum alloy film according to an embodiment of the present invention includes: an Al pure metal that includes at least one type of a first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb, and Ti. A content of the first additive element is 0.01 atomic % or more and 1.0 atomic % or less. Such an aluminum alloy film has excellent bending resistance and excellent heat resistance. Further, also etching can be performed on the aluminum alloy film.

公开(公告)号：US11421315B2

公开(公告)日：2022-08-23

申请号：US16759149

申请日：2019-03-28

Applicant: ULVAC, INC.

Inventor： Xiaoli Lu ,  Junichi Nitta ,  Akira Nakamura ,  Miho Satou

IPC: C23C14/34 ,  C22C19/07 ,  C22F1/10 ,  H01F41/18

Abstract: [Object] To provide a sputtering target with further improved sputtering efficiency, and a method of producing the sputtering target.
[Solving Means] In order to achieve the above-mentioned object, a sputtering target according to an embodiment of the present invention is a cobalt target having a sputtering surface and a purity of 99.95 wt % or more. An intensity ratio (I(002)+I(004))/(I(100)+I(002)+I(101)+I(102)+I(110)+I(103)+I(112)+I(004)) of X-ray diffraction peaks corresponding to a (100) plane, a (002) plane, a (101) plane, a (102) plane, a (110) plane, a (103) plane, a (112) plane, and a (004) plane of a hexagonal close-packed lattice structure along the sputtering surface is 0.85 or more.

公开(公告)号：US09363900B2

公开(公告)日：2016-06-07

申请号：US14693159

申请日：2015-04-22

Applicant: ULVAC, Inc.

Inventor： Satoru Takasawa ,  Shuhei Ichikawa ,  Isao Sugiura ,  Satoru Ishibashi ,  Junichi Nitta

IPC: H05K3/16 ,  H05K1/11 ,  H05K3/18 ,  H05K1/03 ,  C23F1/02 ,  H05K3/06 ,  C23C14/20 ,  C23C14/34 ,  C22C9/06 ,  H05K3/38 ,  H05K3/46 ,  H05K3/10

CPC classification number: H05K3/16 ,  C22C9/01 ,  C22C9/06 ,  C23C14/205 ,  C23C14/3414 ,  C23F1/02 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00014 ,  H01L2924/15311 ,  H05K1/0366 ,  H05K1/115 ,  H05K3/06 ,  H05K3/108 ,  H05K3/188 ,  H05K3/388 ,  H05K3/4644 ,  H05K2201/0209 ,  H05K2201/0317 ,  H05K2201/09509 ,  H05K2201/09563 ,  H01L2224/0401

Abstract: A mounting device in which a conductive film that is not separated is formed on a resin substrate. Alloy thin films, which contain more than 50% by atom of Cu, 5% by atom or more and 30% by atom or less of Ni, and 3% by atom or more and 10% by atom or less of Al, are formed on a base consisting of a resin so as to be brought into contact with a surface of the base by sputtering. Conductive films consisting of copper are formed on surfaces of the alloy thin films so as to obtain a wiring film having a two-layer structure and a metal plug filled in a connection hole. The alloy thin films have high adhesion to a resin; and hence, the wiring film and the metal plug are not separated.

Abstract translation: 在树脂基板上形成没有分离的导电膜的安装装置。 含有超过50原子％的Cu，5原子％以上，30原子％以下的Ni，3原子％以上10原子以下的Al的合金薄膜形成为 在由树脂构成的基底上，通过溅射与基底的表面接触。 在合金薄膜的表面上形成由铜组成的导电膜，以获得具有两层结构的布线膜和填充在连接孔中的金属塞。 合金薄膜对树脂的粘附性高; 因此，布线膜和金属插塞不分离。