公开(公告)号：US10199277B2

公开(公告)日：2019-02-05

申请号：US15268630

申请日：2016-09-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chen-Kuo Chiang ,  Chun-Hsien Lin

IPC: H01L21/8232 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L29/423 ,  H01L29/51 ,  H01L27/092

Abstract: A semiconductor structure includes a stacked metal oxide layer on a substrate, wherein the stacked metal oxide layer includes a first metal oxide layer, a second metal oxide layer, and a third metal oxide layer from top to bottom, and the energy bandgap of the second metal oxide layer is lower than the energy bandgap of the first metal oxide layer and that of the third metal oxide layer. The semiconductor structure includes a metal oxide layer on a substrate, wherein the energy bandgap of the metal oxide layer changes along a direction perpendicular to the surface of the substrate. The present invention also provides a semiconductor process forming said semiconductor structure.

公开(公告)号：US20170005007A1

公开(公告)日：2017-01-05

申请号：US15268630

申请日：2016-09-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chen-Kuo Chiang ,  Chun-Hsien Lin

IPC: H01L21/8234 ,  H01L29/423 ,  H01L21/02 ,  H01L29/51

CPC classification number: H01L21/823462 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/0228 ,  H01L27/092 ,  H01L29/42364 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

Abstract: A semiconductor structure includes a stacked metal oxide layer on a substrate, wherein the stacked metal oxide layer includes a first metal oxide layer, a second metal oxide layer, and a third metal oxide layer from top to bottom, and the energy bandgap of the second metal oxide layer is lower than the energy bandgap of the first metal oxide layer and that of the third metal oxide layer. The semiconductor structure includes a metal oxide layer on a substrate, wherein the energy bandgap of the metal oxide layer changes along a direction perpendicular to the surface of the substrate. The present invention also provides a semiconductor process forming said semiconductor structure.

Abstract translation: 半导体结构包括在基板上的堆叠的金属氧化物层，其中堆叠的金属氧化物层包括从顶部到底部的第一金属氧化物层，第二金属氧化物层和第三金属氧化物层，以及第二金属氧化物层的能带隙 金属氧化物层比第一金属氧化物层和第三金属氧化物层的能带隙低。 半导体结构包括在基板上的金属氧化物层，其中金属氧化物层的能带隙沿着垂直于衬底表面的方向改变。 本发明还提供了形成所述半导体结构的半导体工艺。

公开(公告)号：US20140242811A1

公开(公告)日：2014-08-28

申请号：US13778147

申请日：2013-02-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jui-Chen Chang ,  Chen-Kuo Chiang ,  Chin-Fu Lin ,  Chih-Chien Liu

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/02359 ,  H01L21/28194 ,  H01L29/517

Abstract: An ALD method includes providing a substrate in an ALD reactor, performing a pre-ALD treatment to the substrate in the ALD reactor, and performing one or more ALD cycles to form a dielectric layer on the substrate in the ALD reactor. The pre-ALD treatment includes providing a hydroxylating agent to the substrate in a first duration, and providing a precursor to the substrate in a second duration. Each of the ALD cycles includes providing the hydroxylating agent to the substrate in a third duration, and providing the precursor to the substrate in a fourth duration. The first duration is longer than the third duration.

Abstract translation: ALD方法包括在ALD反应器中提供衬底，对ALD反应器中的衬底进行预ALD处理，以及执行一个或多个ALD循环以在ALD反应器中的衬底上形成电介质层。 前ALD治疗包括在第一持续时间内向基质提供羟化剂，并在第二持续时间内向基质提供前体。 每个ALD循环包括在第三个持续时间内向基质提供羟基化试剂，并在第四个持续时间内向基质提供前体。 第一个时间长于第三个持续时间。