公开(公告)号：US10969687B2

公开(公告)日：2021-04-06

申请号：US16209871

申请日：2018-12-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Harn-Jiunn Wang ,  Kai-Ming Liu ,  Chin-Lung Lin ,  Yi-Hsiu Lee

IPC: G03F7/20 ,  H01L21/3213 ,  H01L21/027

Abstract: A method for forming patterns is provided in the present invention. The process includes the steps of using a first mask to perform a first exposure process to a photoresist, using a second mask to perform a second exposure process to the photoresist, wherein the corners of the second opening patterns in the second mask and the corners of the first opening patterns in the first mask overlap each other, and performing a development process to remove the unexposed portions of the photoresist in the two exposure processes to form staggered hole patterns therein.

公开(公告)号：US20190187562A1

公开(公告)日：2019-06-20

申请号：US16209871

申请日：2018-12-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Harn-Jiunn Wang ,  Kai-Ming Liu ,  Chin-Lung Lin ,  Yi-Hsiu Lee

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/3213

CPC classification number: G03F7/2022 ,  H01L21/027 ,  H01L21/3213

Abstract: A method for forming patterns is provided in the present invention. The process includes the steps of using a first mask to perform a first exposure process to a photoresist, using a second mask to perform a second exposure process to the photoresist, wherein the corners of the second opening patterns in the second mask and the corners of the first opening patterns in the first mask overlap each other, and performing a development process to remove the unexposed portions of the photoresist in the two exposure processes to form staggered hole patterns therein.