公开(公告)号：US09685387B1

公开(公告)日：2017-06-20

申请号：US15185014

申请日：2016-06-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhe Wang ,  Ching Hwa Tey ,  Lu Zou

IPC: H01L23/58 ,  H01L21/66 ,  H01L27/092 ,  H01L29/06 ,  H01L21/8238 ,  G01R31/26 ,  G01R31/28

CPC classification number: H01L22/34 ,  G01R31/2884 ,  H01L21/823878 ,  H01L21/823892 ,  H01L22/30 ,  H01L27/092 ,  H01L27/0928 ,  H01L29/0653

Abstract: A test key and a method for checking the window of a doped region using the test key are provided in the present invention. The test key includes a P-type first well region on a substrate, a P-type substrate region adjacent to the first well region, a N-type first doped region partially overlapping the first well region, two P-type second doped regions at two opposite sides of the first well region, a N-type second well region surrounding the first doped region, the substrate region and the two second doped regions, and a plurality of test pads above the above-identified region.

公开(公告)号：US11749741B2

公开(公告)日：2023-09-05

申请号：US17489813

申请日：2021-09-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhe Wang ,  Lu Zou

IPC: H01L21/324 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02

CPC classification number: H01L29/66492 ,  H01L21/02334 ,  H01L21/324 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7848

Abstract: The invention provides a method for forming a semiconductor structure. The method includes providing a substrate, forming a gate structure on the substrate, respectively forming an epitaxial layer on both sides of the gate structure, and performing a pre-amorphization doping step on the substrate. After the pre-amorphization doping step, a defect is generated in the epitaxial layer, an outer spacer is formed beside the gate structure, and a chemical cleaning step is performed to remove a part of the epitaxial layer, and the defect in the epitaxial layer is removed.

公开(公告)号：US20230070135A1

公开(公告)日：2023-03-09

申请号：US17489813

申请日：2021-09-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： ZHE WANG ,  Lu Zou

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/324 ,  H01L21/02

Abstract: The invention provides a method for forming a semiconductor structure. The method includes providing a substrate, forming a gate structure on the substrate, respectively forming an epitaxial layer on both sides of the gate structure, and performing a pre-amorphization doping step on the substrate. After the pre-amorphization doping step, a defect is generated in the epitaxial layer, an outer spacer is formed beside the gate structure, and a chemical cleaning step is performed to remove a part of the epitaxial layer, and the defect in the epitaxial layer is removed.