公开(公告)号：US09899538B1

公开(公告)日：2018-02-20

申请号：US15591126

申请日：2017-05-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Lung Chang ,  Tien-Fan Ou

IPC: H01L27/115 ,  H01L29/788 ,  H01L27/11521 ,  H01L29/417 ,  G11C16/14 ,  G11C16/10 ,  G11C16/26 ,  G11C16/04

CPC classification number: H01L29/7884 ,  G11C16/0408 ,  G11C16/0416 ,  G11C16/10 ,  G11C16/14 ,  G11C16/26 ,  G11C2216/04 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/41775 ,  H01L29/42328

Abstract: The present invention provides a non-volatile memory device, including a source region and a drain region, a channel region, a floating gate, an enhance hot carrier (hole or electron) injection gate and an erasing gate. The floating gate is disposed on the channel region and the source region and a first dielectric layer is disposed therebetween. The enhance hot carrier injection gate is disposed on the floating gate and the substrate wherein the enhance hot carrier injection gate has an L-shape cross-section. A second dielectric layer is disposed between the enhance hot carrier injection gate and the floating gate, and a fourth dielectric layer is disposed between the enhance hot carrier injection gate and the substrate. The erasing gate is disposed on the drain region. A third dielectric layer is disposed between the erasing gate and the substrate.