公开(公告)号：US09947673B1

公开(公告)日：2018-04-17

申请号：US15479253

申请日：2017-04-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ting-Chia Chang ,  Shih-Hao Liang ,  Chun-Yen Tseng ,  Yu-Tse Kuo ,  Ching-Cheng Lung ,  Hung-Chan Lin ,  Shao-Hui Wu

IPC: H01L27/02 ,  H01L27/11 ,  G11C11/412 ,  H01L29/24

CPC classification number: H01L27/1104 ,  G11C11/412 ,  G11C14/0054 ,  H01L27/0207 ,  H01L27/1116 ,  H01L29/24

Abstract: The present invention provides a semiconductor memory device, includes at least one static random access memory (SRAM) cell, wherein the SRAM cell includes a first pick-up node, and a dielectric oxide SRAM (DOSRAM), disposed in a first dielectric layer and disposed above the SRAM cell when viewed in a cross section view, wherein the DOSRAM includes an oxide semiconductor filed effect transistor (OSFET) and a capacitor, a source of the OSFET is electrically connected to the first pick-up node of the SRAM cell through a via structure, and at least parts of the first dielectric layer are disposed between the source of the OSFET and the via structure, and the capacitor is disposed above the OSFET and electrically connected to a drain of the OSFET when viewed in the cross section view.