公开(公告)号：US20210118738A1

公开(公告)日：2021-04-22

申请号：US17072006

申请日：2020-10-15

Applicant: UTAC Headquarters Pte. Ltd.

Inventor： Enrique Jr SARILE ,  Dzafir Bin Mohd SHARIFF ,  Seung Geun PARK ,  Ronnie M. DE VILLA ,  Zhong Hai WANG

IPC: H01L21/78 ,  H01L23/00 ,  H01L23/31

Abstract: A semiconductor package is disclosed. The semiconductor package includes a substrate with a first surface, a second surface and sidewalls. The package also includes backside metallization (BSM) over the second surface of the substrate. The semiconductor package is devoid of metal debris.

公开(公告)号：US20210193522A1

公开(公告)日：2021-06-24

申请号：US17125917

申请日：2020-12-17

Applicant: UTAC Headquarters Pte. Ltd.

Inventor： Dzafir Bin Mohd SHARIFF ,  Enrique Jr SARILE ,  Seung Geun PARK

IPC: H01L21/78 ,  H01L21/768 ,  H01L23/544

Abstract: A semiconductor package which is free of metal debris from backside metallization (BSM) is disclosed. The semiconductor package is singulated by performing a saw street open process from the frontside of the wafer and then includes a singulation process using a plasma etch from the backside of the wafer with BSM. The singulation process results in metal debris free packages.

公开(公告)号：US20230178413A1

公开(公告)日：2023-06-08

申请号：US18072730

申请日：2022-12-01

Applicant: UTAC Headquarters Pte. Ltd.

Inventor： Dzafir Bin Mohd SHARIFF ,  IL KWON SHIM ,  Enrique E. SARILE, JR. ,  Jackson Fernandez ROSARIO ,  Ronnie M. DE VILLA ,  Chan Loong NEO

IPC: H01L21/683 ,  H01L21/78 ,  B23K26/38 ,  H01L21/3065

CPC classification number: H01L21/6836 ,  B23K26/38 ,  H01L21/78 ,  H01L21/3065 ,  H01L2221/68327

Abstract: Reliable plasma dicing of a wafer with a die attach film (DAF) to the bottom wafer surface to singulate it into individual dies is disclosed. Laser processing is employed to form mask openings in a passivation stack of a processed wafer to serve as a dicing mask. A combination of plama dicing and laser cutting is employed. Plasma is employed to etch the wafer while laser is employed to cut the DAF.

公开(公告)号：US20190051614A1

公开(公告)日：2019-02-14

申请号：US16057773

申请日：2018-08-07

Applicant: UTAC Headquarters Pte. Ltd.

Inventor： Antonio Bambalan DIMAANO JR. ,  Dzafir Bin Mohd SHARIFF ,  Seung Guen PARK ,  Roel Adeva ROBLES

IPC: H01L23/552 ,  H01L21/56 ,  H01L23/00 ,  H01L23/50

Abstract: Semiconductor packages having an electromagnetic interference (EMI) shielding layer and methods for forming the same are disclosed. The method includes providing a base carrier defined with an active region and a non-active region. A fan-out redistribution structure is formed over the base carrier. A die having elongated die contacts are provided. The die contacts corresponding to conductive pillars. The die contacts are in electrical communication with the fan-out redistribution structure. An encapsulant having a first major surface and a second major surface opposite to the first major surface is formed. The encapsulant surrounds the die contacts and sidewalls of the die. An electromagnetic interference (EMI) shielding layer is formed to line the first major surface and sides of the encapsulant. An etch process is performed after forming the EMI shielding layer to completely remove the base carrier and singulate the semiconductor package.