公开(公告)号：US20210279379A1

公开(公告)日：2021-09-09

申请号：US17029087

申请日：2020-09-23

Applicant: University of Electronic Science and Technology of China

Inventor： Yuehang XU ,  Shuman MAO ,  Yunqiu WU ,  Ruimin XU ,  Bo YAN

IPC: G06F30/20

Abstract: A parameter extraction method for quasi-physical large-signal model for microwave gallium nitride high-electron-mobility transistors (GaN HEMTs). The method includes: 1) acquiring a data set of parameters for a large-signal model for a plurality of different microwave transistors GaN HEMTs having the same size; 2) performing statistical analysis of physical parameters of the large-signal model and sub-models thereof: 3) characterizing the correlation between the physical parameters by factor analysis; and 4) predicting the output characteristics of the GaN HEMTs.