公开(公告)号：US20210279379A1

公开(公告)日：2021-09-09

申请号：US17029087

申请日：2020-09-23

Applicant: University of Electronic Science and Technology of China

Inventor： Yuehang XU ,  Shuman MAO ,  Yunqiu WU ,  Ruimin XU ,  Bo YAN

IPC: G06F30/20

Abstract: A parameter extraction method for quasi-physical large-signal model for microwave gallium nitride high-electron-mobility transistors (GaN HEMTs). The method includes: 1) acquiring a data set of parameters for a large-signal model for a plurality of different microwave transistors GaN HEMTs having the same size; 2) performing statistical analysis of physical parameters of the large-signal model and sub-models thereof: 3) characterizing the correlation between the physical parameters by factor analysis; and 4) predicting the output characteristics of the GaN HEMTs.

公开(公告)号：US20240267069A1

公开(公告)日：2024-08-08

申请号：US18262503

申请日：2023-01-13

Applicant: University of Electronic Science and Technology of China

Inventor： Chenxi ZHAO ,  Kai KANG ,  Yiming YU ,  Huihua LIU ,  Yunqiu WU

IPC: H04B1/16 ,  H03D7/14 ,  H04B1/24

CPC classification number: H04B1/1607 ,  H03D7/1441 ,  H04B1/24

Abstract: This invention, falling into the field of radio communication technology, discloses 5G millimeter wave dual-band dual-mode mixer and wireless communication terminal. In the said 5G millimeter wave dual-band dual-mode mixer, the first MOSFET is connected to the source of the second MOSFET and the third MOSFET through its drain, with the first MOSFET connected to the drain of the fourth MOSFET through its drain. The second MOSFET is connected to one end of the first capacitor through its gate, with the other end of the first capacitor connected to the drain of the third MOSFET. The third MOSFET is connected to one end of the second capacitor through its gate and the other end of the second capacitor is connected to the drain of the second MOSFET.

公开(公告)号：US20240267002A1

公开(公告)日：2024-08-08

申请号：US18262527

申请日：2023-01-13

Applicant: University of Electronic Science and Technology of China

Inventor： Yiming YU ,  Kai KANG ,  Chenxi ZHAO ,  Huihua LIU ,  Yunqiu WU

IPC: H03D7/14 ,  H04B1/00

CPC classification number: H03D7/1458 ,  H03D7/1441 ,  H04B1/005

Abstract: The present invention belongs to the technical field of 5G millimeter wave communication and discloses a 5G dual-band up-mixer with switching between amplification function and frequency mixing function, and terminal. The first double-balanced active mixer and the second double-balanced active mixer are connected in series, and both ends of the first double-balanced active mixer are connected with a first transformer and a second transformer respectively; both ends of the second double-balanced active mixer are respectively connected with the second transformer and the third transformer; the first double-balanced active mixer is provided with a first MOSFET and a fourth transformer connected with the first MOSFET; the second double-balanced active mixer is provided with a second MOSFET and a fifth transformer connected with the second MOSFET.

公开(公告)号：US20220102542A1

公开(公告)日：2022-03-31

申请号：US17264521

申请日：2019-12-20

Applicant: University of Electronic Science and Technology of China

Inventor： Yuehang XU ,  Yan WANG ,  Yunqiu WU

IPC: H01L29/778 ,  H01L23/14 ,  H01L29/66 ,  H01L29/20

Abstract: The present disclosure provides a flexible microwave power transistor and a preparation method thereof. In view of great lattice mismatch and poor performance of a device prepared with a Si substrate in an existing preparation method, the preparation method of the present disclosure grows a gallium nitride high electron mobility transistor (GaN HEMT) layer on a rigid silicon carbide (SiC) substrate to avoid lattice mismatch between a silicon (Si) substrate and gallium nitride (GaN), improving performance of the flexible microwave power transistor. Moreover, in view of problems such as low output power, power added efficiency and power gain with the existing device preparation method, the present disclosure retains part of the rigid SiC substrate and grows a flexible substrates at room temperature to prepare a high-quality device. The present disclosure has greatly improved power output capability, efficiency and gain, and basically unchanged performance of device under 0.75% of stress.