公开(公告)号：US20220102542A1

公开(公告)日：2022-03-31

申请号：US17264521

申请日：2019-12-20

Applicant: University of Electronic Science and Technology of China

Inventor： Yuehang XU ,  Yan WANG ,  Yunqiu WU

IPC: H01L29/778 ,  H01L23/14 ,  H01L29/66 ,  H01L29/20

Abstract: The present disclosure provides a flexible microwave power transistor and a preparation method thereof. In view of great lattice mismatch and poor performance of a device prepared with a Si substrate in an existing preparation method, the preparation method of the present disclosure grows a gallium nitride high electron mobility transistor (GaN HEMT) layer on a rigid silicon carbide (SiC) substrate to avoid lattice mismatch between a silicon (Si) substrate and gallium nitride (GaN), improving performance of the flexible microwave power transistor. Moreover, in view of problems such as low output power, power added efficiency and power gain with the existing device preparation method, the present disclosure retains part of the rigid SiC substrate and grows a flexible substrates at room temperature to prepare a high-quality device. The present disclosure has greatly improved power output capability, efficiency and gain, and basically unchanged performance of device under 0.75% of stress.

公开(公告)号：US20230327611A1

公开(公告)日：2023-10-12

申请号：US17875465

申请日：2022-07-28

Applicant: University of Electronic Science and Technology of China

Inventor： Yuehang XU ,  Bowen TANG

IPC: H03F1/42 ,  H03F3/24 ,  H03F1/32

CPC classification number: H03F1/42 ,  H03F3/245 ,  H03F1/32 ,  H03F2200/36 ,  H03F2200/451

Abstract: An ultra-wideband power amplifier includes a preamplifier circuit and a post amplifier circuit. The preamplifier circuit includes a first DC blocking capacitor C1, a first decoupling capacitor C2, a second decoupling capacitor C3, a stabilizing resistor Rin, a first AC blocking resistor RG1, a first input inductor L1, a second input inductor L2, an output inductor L3, a first input microstrip line MLIN1, a second input microstrip line MLIN2, an output microstrip line MLIN3, and a first transistor Q1. A first end of the first DC blocking capacitor C1 acts as an input terminal of the preamplifier circuit, and a second end of the first DC blocking capacitor C1 is connected to the stabilizing resistor Rin, the first input inductor L1, the first input microstrip line MLIN1, and a gate electrode of the first transistor Q1 sequentially. One end of the first decoupling capacitor C2 is grounded.

公开(公告)号：US20210279379A1

公开(公告)日：2021-09-09

申请号：US17029087

申请日：2020-09-23

Applicant: University of Electronic Science and Technology of China

Inventor： Yuehang XU ,  Shuman MAO ,  Yunqiu WU ,  Ruimin XU ,  Bo YAN

IPC: G06F30/20

Abstract: A parameter extraction method for quasi-physical large-signal model for microwave gallium nitride high-electron-mobility transistors (GaN HEMTs). The method includes: 1) acquiring a data set of parameters for a large-signal model for a plurality of different microwave transistors GaN HEMTs having the same size; 2) performing statistical analysis of physical parameters of the large-signal model and sub-models thereof: 3) characterizing the correlation between the physical parameters by factor analysis; and 4) predicting the output characteristics of the GaN HEMTs.