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公开(公告)号：US20050189988A1
公开(公告)日：2005-09-01
申请号：US10789070
申请日：2004-02-27
申请人： Wayne Killian , Jason Chilcote
发明人： Wayne Killian , Jason Chilcote
CPC分类号： G01D5/142 , G01D3/021 , H03F3/181 , H03F3/45071 , H03F2203/45361
摘要： Two bridge type transducers are coupled in series with their outputs each driving one of a pair of differential amplifiers, with the outputs tied together in a push-pull configuration. In further embodiments, push-pull operation is obtained by matching amplifier gain components and using current mirrors. Lower voltage operation may be achieved by simple diode level shifting of the transducer outputs. In one embodiment, the transducers comprise Hall effect sensors.
摘要翻译： 两个桥式换能器与它们的输出串联耦合，每个驱动一对差分放大器中的一个，其中输出以推挽配置连接在一起。 在另外的实施例中，通过匹配放大器增益分量并使用电流镜来获得推挽操作。 低电压操作可以通过传感器输出的简单二极管电平移位来实现。 在一个实施例中，换能器包括霍尔效应传感器。
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公开(公告)号：US20140332917A1
公开(公告)日：2014-11-13
申请号：US13890462
申请日：2013-05-09
申请人： Jason Chilcote , Richard Alan Davis
发明人： Jason Chilcote , Richard Alan Davis
IPC分类号： G01R33/09
CPC分类号： G01R33/09 , G01R33/0052 , H01L27/22 , H01L43/02 , H01L43/08
摘要： Apparatus and associated methods may relate to Magneto-Resistive Sensing Devices (MRSDs). In accordance with an exemplary embodiment, an MRSD comprises an underlying semiconductor device and a magneto-resistive sensor. In some exemplary embodiments, the semiconductor device is processed through most of a standard process flow. After the standard process flow, in various embodiments, a planarization step may be performed to create a more planar top surface. In some embodiments, the magneto-resistive material, which may be made from a Nickel-Iron alloy, called Permalloy, is deposited on the planar surface. A layer of interconnect metallization also may reside in this top region. The magneto-resistive material may contact the topmost layer of metallization of the semiconductor device via contact openings in the planarized surface. In some embodiments, the magneto-resistive material may similarly contact the topmost layer of metallization through these contact openings. The magneto-resistive material resides directly above the underlying circuitry.
摘要翻译： 装置和相关方法可以涉及磁阻检测装置（MRSD）。 根据示例性实施例，MRSD包括底层半导体器件和磁阻传感器。 在一些示例性实施例中，半导体器件通过大部分标准工艺流程进行处理。 在标准工艺流程之后，在各种实施例中，可以执行平面化步骤以创建更平坦的顶表面。 在一些实施例中，可以由镍 - 铁合金制成的称为坡莫合金的磁阻材料沉积在平面上。 互连金属化层也可以驻留在该顶部区域中。 磁阻材料可以通过平坦化表面中的接触开口接触半导体器件的最上层的金属化层。 在一些实施例中，磁阻材料可以类似地通过这些接触开口接触最上层的金属化层。 磁阻材料直接位于底层电路的上方。
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公开(公告)号：US20120223761A1
公开(公告)日：2012-09-06
申请号：US13038052
申请日：2011-03-01
申请人： Jason Chilcote
发明人： Jason Chilcote
IPC分类号： G06F7/42
CPC分类号： G01D5/2448
摘要： This disclosure is directed to techniques for decoding two or more signals that vary sinusoidally with respect to a parameter value to produce a decoded signal that varies linearly with respect to the parameter value. The techniques may include receiving a first signal and a second signal, the first signal varying with respect to a parameter value according to a first sinusoidal function having a period and a first phase, the second signal varying with respect to the parameter value according to a second sinusoidal function having the period and a second phase different from the first phase. The techniques may further include performing one or more arithmetic operations using the first signal, the second signal, and an offset value to generate a third signal that varies linearly with respect to the parameter value for at least one-half of the period of the first signal and the second signal.
摘要翻译： 本公开涉及用于解码相对于参数值正弦变化的两个或更多个信号的技术，以产生相对于参数值线性变化的解码信号。 所述技术可以包括接收第一信号和第二信号，所述第一信号根据具有周期和第一相位的第一正弦函数相对于参数值而变化，所述第二信号相对于参数值根据a 第二正弦函数具有周期和与第一相位不同的第二相位。 这些技术可以进一步包括使用第一信号，第二信号和偏移值来执行一个或多个算术运算，以生成相对于参数值线性改变的第一信号，该第三信号在第一信号 信号和第二信号。
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公开(公告)号：US20120223699A1
公开(公告)日：2012-09-06
申请号：US13037950
申请日：2011-03-01
IPC分类号： G01B7/30
CPC分类号： G01D5/145 , G01D5/2451
摘要： This disclosure is directed to techniques for magnetic field angular position sensing. A device designed in accordance with this disclosure may include a magnetoresistive sensor configured to generate a signal indicative of an angular position of a magnetic field, the signal having an angular range of 180 degrees, a first polarity sensor configured to generate a signal indicative of a polarity of the magnetic field sensed from a first location, and a second polarity sensor configured to generate a signal indicative of a polarity of the magnetic field sensed from a second location different from the first location.
摘要翻译： 本公开涉及用于磁场角位置感测的技术。 根据本公开设计的装置可以包括磁阻传感器，其被配置为产生指示磁场的角位置的信号，该信号具有180度的角度范围，第一极性传感器被配置为产生指示 从第一位置感测的磁场的极性和第二极性传感器被配置为产生指示从与第一位置不同的第二位置感测的磁场的极性的信号。
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公开(公告)号：US09041387B2
公开(公告)日：2015-05-26
申请号：US13037950
申请日：2011-03-01
CPC分类号： G01D5/145 , G01D5/2451
摘要： This disclosure is directed to techniques for magnetic field angular position sensing. A device designed in accordance with this disclosure may include a magnetoresistive sensor configured to generate a signal indicative of an angular position of a magnetic field, the signal having an angular range of 180 degrees, a first polarity sensor configured to generate a signal indicative of a polarity of the magnetic field sensed from a first location, and a second polarity sensor configured to generate a signal indicative of a polarity of the magnetic field sensed from a second location different from the first location.
摘要翻译： 本公开涉及用于磁场角位置感测的技术。 根据本公开设计的装置可以包括磁阻传感器，其被配置为产生指示磁场的角位置的信号，该信号具有180度的角度范围，第一极性传感器被配置为产生指示 从第一位置感测的磁场的极性和第二极性传感器被配置为产生指示从与第一位置不同的第二位置感测的磁场的极性的信号。
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公开(公告)号：US20070007951A1
公开(公告)日：2007-01-11
申请号：US11178654
申请日：2005-07-09
申请人： Jason Chilcote , Gregory Furlong , Joseph Murdock , Aaron Meyers
发明人： Jason Chilcote , Gregory Furlong , Joseph Murdock , Aaron Meyers
IPC分类号： G01B7/30
CPC分类号： G01D5/24476
摘要： A magnetic sensing apparatus includes a first magnetic transducer separated spatially from a second magnetic transducer and proximate to a target and a direction decoding circuit associated with the first and second magnetic transducers, wherein the direction decoding circuit produces output pulses that provide data indicative of a rotation of the target while rejecting rotational vibration signals associated with the target during a rotational detection of the target utilizing the first and second magnetic transducers without producing erroneous output pulses or missing an excessive number of the output pulses during speed and rotational detection operations thereof.
摘要翻译： 磁感测装置包括：第一磁换能器，其与第二磁换能器在空间上分离，并且靠近目标，以及与第一和第二磁换能器相关联的方向解码电路，其中方向解码电路产生输出脉冲，其提供指示旋转的数据 的目标物，同时在利用第一和第二磁换能器的目标旋转检测期间拒绝与目标相关联的旋转振动信号，而不会在其速度和旋转检测操作期间产生错误的输出脉冲或丢失过多的输出脉冲。
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公开(公告)号：US20160033588A1
公开(公告)日：2016-02-04
申请号：US14819320
申请日：2015-08-05
申请人： Jason Chilcote , Richard Alan Davis
发明人： Jason Chilcote , Richard Alan Davis
CPC分类号： G01R33/09 , G01R33/0052 , H01L27/22 , H01L43/02 , H01L43/08
摘要： Apparatus and associated methods may relate to Magneto-Resistive Sensing Devices (MRSDs). In accordance with an exemplary embodiment, an MRSD comprises an underlying semiconductor device and a magneto-resistive sensor. In some exemplary embodiments, the semiconductor device is processed through most of a standard process flow. After the standard process flow, in various embodiments, a planarization step may be performed to create a more planar top surface. In some embodiments, the magneto-resistive material, which may be made from a Nickel-Iron alloy, called Permalloy, is deposited on the planar surface. A layer of interconnect metallization also may reside in this top region. The magneto-resistive material may contact the topmost layer of metallization of the semiconductor device via contact openings in the planarized surface. In some embodiments, the magneto-resistive material may similarly contact the topmost layer of metallization through these contact openings. The magneto-resistive material resides directly above the underlying circuitry.
摘要翻译： 装置和相关方法可以涉及磁阻检测装置（MRSD）。 根据示例性实施例，MRSD包括底层半导体器件和磁阻传感器。 在一些示例性实施例中，半导体器件通过大部分标准工艺流程进行处理。 在标准工艺流程之后，在各种实施例中，可以执行平面化步骤以创建更平坦的顶表面。 在一些实施例中，可以由镍 - 铁合金制成的称为坡莫合金的磁阻材料沉积在平面上。 互连金属化层也可以驻留在该顶部区域中。 磁阻材料可以通过平坦化表面中的接触开口接触半导体器件的最上层的金属化层。 在一些实施例中，磁阻材料可以类似地通过这些接触开口接触最上层的金属化层。 磁阻材料直接位于底层电路的上方。
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公开(公告)号：US09134385B2
公开(公告)日：2015-09-15
申请号：US13890462
申请日：2013-05-09
申请人： Jason Chilcote , Richard Alan Davis
发明人： Jason Chilcote , Richard Alan Davis
CPC分类号： G01R33/09 , G01R33/0052 , H01L27/22 , H01L43/02 , H01L43/08
摘要： Apparatus and associated methods may relate to Magneto-Resistive Sensing Devices (MRSDs). In accordance with an exemplary embodiment, an MRSD comprises an underlying semiconductor device and a magneto-resistive sensor. In some exemplary embodiments, the semiconductor device is processed through most of a standard process flow. After the standard process flow, in various embodiments, a planarization step may be performed to create a more planar top surface. In some embodiments, the magneto-resistive material, which may be made from a Nickel-Iron alloy, called Permalloy, is deposited on the planar surface. A layer of interconnect metallization also may reside in this top region. The magneto-resistive material may contact the topmost layer of metallization of the semiconductor device via contact openings in the planarized surface. In some embodiments, the magneto-resistive material may similarly contact the topmost layer of metallization through these contact openings. The magneto-resistive material resides directly above the underlying circuitry.
摘要翻译： 装置和相关方法可以涉及磁阻检测装置（MRSD）。 根据示例性实施例，MRSD包括底层半导体器件和磁阻传感器。 在一些示例性实施例中，半导体器件通过大部分标准工艺流程进行处理。 在标准工艺流程之后，在各种实施例中，可以执行平面化步骤以创建更平坦的顶表面。 在一些实施例中，可以由镍 - 铁合金制成的称为坡莫合金的磁阻材料沉积在平面上。 互连金属化层也可以驻留在该顶部区域中。 磁阻材料可以通过平坦化表面中的接触开口接触半导体器件的最上层的金属化层。 在一些实施例中，磁阻材料可以类似地通过这些接触开口接触最上层的金属化层。 磁阻材料直接位于底层电路的上方。
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公开(公告)号：US08712722B2
公开(公告)日：2014-04-29
申请号：US13038052
申请日：2011-03-01
申请人： Jason Chilcote
发明人： Jason Chilcote
CPC分类号： G01D5/2448
摘要： This disclosure is directed to techniques for decoding two or more signals that vary sinusoidally with respect to a parameter value to produce a decoded signal that varies linearly with respect to the parameter value. The techniques may include receiving a first signal and a second signal, the first signal varying with respect to a parameter value according to a first sinusoidal function having a period and a first phase, the second signal varying with respect to the parameter value according to a second sinusoidal function having the period and a second phase different from the first phase. The techniques may further include performing one or more arithmetic operations using the first signal, the second signal, and an offset value to generate a third signal that varies linearly with respect to the parameter value for at least one-half of the period of the first signal and the second signal.
摘要翻译： 本公开涉及用于解码相对于参数值正弦变化的两个或更多个信号的技术，以产生相对于参数值线性变化的解码信号。 所述技术可以包括接收第一信号和第二信号，所述第一信号根据具有周期和第一相位的第一正弦函数相对于参数值而变化，所述第二信号相对于参数值根据a 第二正弦函数具有周期和与第一相位不同的第二相位。 这些技术可以进一步包括使用第一信号，第二信号和偏移值来执行一个或多个算术运算，以生成相对于参数值线性改变的第一信号，该第三信号在第一信号 信号和第二信号。
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公开(公告)号：US20070052400A1
公开(公告)日：2007-03-08
申请号：US11221467
申请日：2005-09-07
申请人： Jason Chilcote
发明人： Jason Chilcote
IPC分类号： G05F1/00
CPC分类号： G05F1/575
摘要： A low dropout voltage regulator apparatus is disclosed, which includes a low dropout voltage regulator circuit connected to a supply voltage, wherein at least one input voltage is input to the low dropout voltage regulator circuit to generate at least one output voltage from the low dropout voltage regulator circuit. A feedback compensation component is also provided, which is integrated with the low dropout voltage regulator circuit. The feedback compensation component is located generally within the low dropout voltage regulator circuit to take advantage of a Miller effect associated with the low dropout voltage regulator circuit in order to withstand high voltages associated with the supply voltage and generate the output voltage from the low dropout voltage regulator circuit.
摘要翻译： 公开了一种低压差稳压器装置，其包括连接到电源电压的低压差稳压器电路，其中至少一个输入电压被输入到低压差稳压器电路以从低压差电压产生至少一个输出电压 调节电路。 还提供了一个反馈补偿元件，它与低压差稳压器电路集成在一起。 反馈补偿分量通常位于低压降稳压器电路内，以利用与低压差稳压器电路相关联的米勒效应，以便承受与电源电压相关的高电压并从低压降电压产生输出电压 调节电路。
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