公开(公告)号：US08710602B2

公开(公告)日：2014-04-29

申请号：US13332305

申请日：2011-12-20

申请人： Xueti Tang ,  Dmytro Apalkov ,  Steven M. Watts ,  Kiseok Moon ,  Vladimir Nikitin

发明人： Xueti Tang ,  Dmytro Apalkov ,  Steven M. Watts ,  Kiseok Moon ,  Vladimir Nikitin

IPC分类号： H01L43/08

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295

摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer adjoining the at least one insulating layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one insulating layer is adjacent to at least one of the free layer and the pinned layer. The at least one magnetic insertion layer adjoins the at least one insulating layer. In some aspects, the insulating layer(s) include at least one of magnesium oxide, aluminum oxide, tantalum oxide, ruthenium oxide, titanium oxide, and nickel oxide The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，自由层，至少一个绝缘层以及与至少一个绝缘层邻接的至少一个磁性插入层。 非磁性间隔层位于被钉扎层和自由层之间。 至少一个绝缘层与自由层和钉扎层中的至少一个相邻。 所述至少一个磁性插入层邻接所述至少一个绝缘层。 在一些方面，绝缘层包括氧化镁，氧化铝，氧化钽，氧化钌，氧化钛和氧化镍中的至少一种。磁结被构造成使得自由层可在多个稳定的 写入电流通过磁性结时的磁状态。

公开(公告)号：US08704319B2

公开(公告)日：2014-04-22

申请号：US13332328

申请日：2011-12-20

申请人： Xueti Tang ,  Vladimir Nikitin ,  Dmytro Apalkov ,  Kiseok Moon ,  Steven M. Watts

发明人： Xueti Tang ,  Vladimir Nikitin ,  Dmytro Apalkov ,  Kiseok Moon ,  Steven M. Watts

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675

摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，自由层和至少一个阻尼减小层。 自由层具有固有阻尼常数。 非磁性间隔层位于被钉扎层和自由层之间。 所述至少一个阻尼减小层与所述自由层的至少一部分相邻并且被配置为减小所述自由层的固有阻尼常数。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US20120261776A1

公开(公告)日：2012-10-18

申请号：US13332328

申请日：2011-12-20

申请人： Xueti Tang ,  Vladimir Nikitin ,  Dmytro Apalkov ,  Kiseok Moon ,  Steven M. Watts

发明人： Xueti Tang ,  Vladimir Nikitin ,  Dmytro Apalkov ,  Kiseok Moon ,  Steven M. Watts

IPC分类号： H01L29/82 ,  H01L21/18

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675

摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，自由层和至少一个阻尼减小层。 自由层具有固有阻尼常数。 非磁性间隔层位于被钉扎层和自由层之间。 所述至少一个阻尼减小层与所述自由层的至少一部分相邻并且被配置为减小所述自由层的固有阻尼常数。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US20130154036A1

公开(公告)日：2013-06-20

申请号：US13332305

申请日：2011-12-20

申请人： Xueti Tang ,  Dmytro Apalkov ,  Steven M. Watts ,  Kiseok Moon ,  Vladimir Nikitin

发明人： Xueti Tang ,  Dmytro Apalkov ,  Steven M. Watts ,  Kiseok Moon ,  Vladimir Nikitin

IPC分类号： H01L43/10 ,  H01L43/12

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295

摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer adjoining the at least one insulating layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one insulating layer is adjacent to at least one of the free layer and the pinned layer. The at least one magnetic insertion layer adjoins the at least one insulating layer. In some aspects, the insulating layer(s) include at least one of magnesium oxide, aluminum oxide, tantalum oxide, ruthenium oxide, titanium oxide, and nickel oxide The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，自由层，至少一个绝缘层以及与至少一个绝缘层邻接的至少一个磁性插入层。 非磁性间隔层位于被钉扎层和自由层之间。 至少一个绝缘层与自由层和钉扎层中的至少一个相邻。 所述至少一个磁性插入层邻接所述至少一个绝缘层。 在一些方面，绝缘层包括氧化镁，氧化铝，氧化钽，氧化钌，氧化钛和氧化镍中的至少一种。磁结被构造成使得自由层可在多个稳定的 写入电流通过磁性结时的磁状态。

公开(公告)号：US10446209B2

公开(公告)日：2019-10-15

申请号：US13035726

申请日：2011-02-25

申请人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang ,  Kiseok Moon ,  Mohamad Towfik Krounbi

发明人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang ,  Kiseok Moon ,  Mohamad Towfik Krounbi

IPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01F41/32 ,  H01F41/34

摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

公开(公告)号：US20120155156A1

公开(公告)日：2012-06-21

申请号：US13035726

申请日：2011-02-25

申请人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang ,  Kiseok Moon ,  Mohamad Towfik Krounbi

发明人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang ,  Kiseok Moon ,  Mohamad Towfik Krounbi

IPC分类号： G11C11/02 ,  G11B5/84 ,  G11B5/64

CPC分类号： G11C11/1675 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01F41/325 ,  H01F41/34

摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

摘要翻译： 描述了一种用于提供使用磁性元件的磁性元件和磁性存储器的方法和系统。 磁性元件用于包括电耦合到磁性元件的触点的磁性装置中。 该方法和系统包括提供固定，非磁性间隔物和自由层。 自由层具有对应于小于面外去磁能的垂直各向异性能的平面退磁能和垂直磁各向异性。 非磁性间隔层位于被钉扎层和自由层之间。 该方法和系统还包括提供与自由层和接触相邻的垂直覆盖层。 垂直覆盖层在自由层中引起至少一部分垂直磁各向异性。 磁性元件被配置为当写入电流通过磁性元件时允许自由层在磁状态之间切换。

公开(公告)号：US08987006B2

公开(公告)日：2015-03-24

申请号：US13451679

申请日：2012-04-20

申请人： Kiseok Moon ,  Xueti Tang ,  Mohamad Towfik Krounbi

发明人： Kiseok Moon ,  Xueti Tang ,  Mohamad Towfik Krounbi

IPC分类号： H01L21/00 ,  H01L43/08 ,  H01L27/22 ,  H01L43/12

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/224 ,  H01L43/12

摘要： A magnetic junction usable in a magnetic memory and a method for providing the magnetic memory are described. The method includes providing a pinned layer, providing an engineered nonmagnetic tunneling barrier layer, and providing a free layer. The pinned layer and the free layer each include at least one ferromagnetic layer. The engineered nonmagnetic tunneling barrier layer has a tuned resistance area product. In some aspects, the step of providing the engineered nonmagnetic tunneling barrier layer further includes radio-frequency depositing a first oxide layer, depositing a metal layer, and oxidizing the metal layer to provide a second oxide.

摘要翻译： 描述可用于磁存储器的磁结和用于提供磁存储器的方法。 该方法包括提供钉扎层，提供工程非磁性隧道势垒层，并提供自由层。 被钉扎层和自由层各自包括至少一个铁磁层。 工程非磁性隧道势垒层具有调谐电阻区域积。 在一些方面，提供工程非磁性隧道势垒层的步骤还包括射频沉积第一氧化物层，沉积金属层，以及氧化金属层以提供第二氧化物。

公开(公告)号：US20120267736A1

公开(公告)日：2012-10-25

申请号：US13451679

申请日：2012-04-20

申请人： Kiseok Moon ,  Xueti Tang ,  Mohamad Towfik Krounbi

发明人： Kiseok Moon ,  Xueti Tang ,  Mohamad Towfik Krounbi

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/224 ,  H01L43/12

摘要： A magnetic junction usable in a magnetic memory and a method for providing the magnetic memory are described. The method includes providing a pinned layer, providing an engineered nonmagnetic tunneling barrier layer, and providing a free layer. The pinned layer and the free layer each include at least one ferromagnetic layer. The engineered nonmagnetic tunneling barrier layer has a tuned resistance area product. In some aspects, the step of providing the engineered nonmagnetic tunneling barrier layer further includes radio-frequency depositing a first oxide layer, depositing a metal layer, and oxidizing the metal layer to provide a second oxide.

摘要翻译： 描述可用于磁存储器的磁结和用于提供磁存储器的方法。 该方法包括提供钉扎层，提供工程非磁性隧道势垒层，并提供自由层。 被钉扎层和自由层各自包括至少一个铁磁层。 工程非磁性隧道势垒层具有调谐电阻区域积。 在一些方面，提供工程非磁性隧道势垒层的步骤还包括射频沉积第一氧化物层，沉积金属层，以及氧化金属层以提供第二氧化物。

公开(公告)号：US08796796B2

公开(公告)日：2014-08-05

申请号：US13721214

申请日：2012-12-20

申请人： Steven M. Watts ,  Kiseok Moon

发明人： Steven M. Watts ,  Kiseok Moon

IPC分类号： H01L29/82

CPC分类号： H01L29/82 ,  G11C11/161 ,  H01L29/66007 ,  H01L43/08

摘要： A magnetic junction is provided. The magnetic junction includes a reference stack, a nonmagnetic spacer layer and a free layer. The reference stack includes a high perpendicular magnetic anisotropy (PMA) layer and a graded polarization enhancement layer (PEL) between the high PMA and nonmagnetic spacer layers. The PEL is magnetically coupled with the reference layer. The PEL includes magnetic layers and nonmagnetic insertion layers. At least part of the PEL has a spin polarization greater than the PMA layer's. The nonmagnetic insertion layers are configured such that the magnetic layers are ferromagnetically coupled and the crystalline orientations of the high PMA and nonmagnetic spacer layers are decoupled. Each nonmagnetic insertion layer's thickness is insufficient for the crystalline orientations to be decoupled in the absence of the remaining nonmagnetic insertion layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 提供一个磁性结。 磁结包括参考叠层，非磁性间隔层和自由层。 参考堆叠包括高PMA和非磁性间隔层之间的高垂直磁各向异性（PMA）层和渐变极化增强层（PEL）。 PEL与参考层磁耦合。 PEL包括磁性层和非磁性插入层。 PEL的至少一部分具有大于PMA层的自旋极化。 非磁性插入层被配置为使得磁性层被铁磁耦合并且高PMA和非磁性间隔层的结晶取向被解耦。 每个非磁性插入层的厚度不足以使晶体取向在不存在剩余的非磁性插入层的情况下被去耦合。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。

公开(公告)号：US20140175574A1

公开(公告)日：2014-06-26

申请号：US13721214

申请日：2012-12-20

申请人： Steven M. Watts ,  Kiseok Moon

发明人： Steven M. Watts ,  Kiseok Moon

IPC分类号： H01L29/82 ,  H01L29/66

CPC分类号： H01L29/82 ,  G11C11/161 ,  H01L29/66007 ,  H01L43/08

摘要： A magnetic junction is provided. The magnetic junction includes a reference stack, a nonmagnetic spacer layer and a free layer. The reference stack includes a high perpendicular magnetic anisotropy (PMA) layer and a graded polarization enhancement layer (PEL) between the high PMA and nonmagnetic spacer layers. The PEL is magnetically coupled with the reference layer. The PEL includes magnetic layers and nonmagnetic insertion layers. At least part of the PEL has a spin polarization greater than the PMA layer's. The nonmagnetic insertion layers are configured such that the magnetic layers are ferromagnetically coupled and the crystalline orientations of the high PMA and nonmagnetic spacer layers are decoupled. Each nonmagnetic insertion layer's thickness is insufficient for the crystalline orientations to be decoupled in the absence of the remaining nonmagnetic insertion layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 提供一个磁性结。 磁结包括参考叠层，非磁性间隔层和自由层。 参考堆叠包括高PMA和非磁性间隔层之间的高垂直磁各向异性（PMA）层和渐变极化增强层（PEL）。 PEL与参考层磁耦合。 PEL包括磁性层和非磁性插入层。 PEL的至少一部分具有大于PMA层的自旋极化。 非磁性插入层被配置为使得磁性层被铁磁耦合并且高PMA和非磁性间隔层的结晶取向被解耦。 每个非磁性插入层的厚度不足以使晶体取向在不存在剩余的非磁性插入层的情况下被去耦合。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。