公开(公告)号：US08710602B2

公开(公告)日：2014-04-29

申请号：US13332305

申请日：2011-12-20

申请人： Xueti Tang ,  Dmytro Apalkov ,  Steven M. Watts ,  Kiseok Moon ,  Vladimir Nikitin

发明人： Xueti Tang ,  Dmytro Apalkov ,  Steven M. Watts ,  Kiseok Moon ,  Vladimir Nikitin

IPC分类号： H01L43/08

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295

摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer adjoining the at least one insulating layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one insulating layer is adjacent to at least one of the free layer and the pinned layer. The at least one magnetic insertion layer adjoins the at least one insulating layer. In some aspects, the insulating layer(s) include at least one of magnesium oxide, aluminum oxide, tantalum oxide, ruthenium oxide, titanium oxide, and nickel oxide The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，自由层，至少一个绝缘层以及与至少一个绝缘层邻接的至少一个磁性插入层。 非磁性间隔层位于被钉扎层和自由层之间。 至少一个绝缘层与自由层和钉扎层中的至少一个相邻。 所述至少一个磁性插入层邻接所述至少一个绝缘层。 在一些方面，绝缘层包括氧化镁，氧化铝，氧化钽，氧化钌，氧化钛和氧化镍中的至少一种。磁结被构造成使得自由层可在多个稳定的 写入电流通过磁性结时的磁状态。

公开(公告)号：US08704319B2

公开(公告)日：2014-04-22

申请号：US13332328

申请日：2011-12-20

申请人： Xueti Tang ,  Vladimir Nikitin ,  Dmytro Apalkov ,  Kiseok Moon ,  Steven M. Watts

发明人： Xueti Tang ,  Vladimir Nikitin ,  Dmytro Apalkov ,  Kiseok Moon ,  Steven M. Watts

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675

摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，自由层和至少一个阻尼减小层。 自由层具有固有阻尼常数。 非磁性间隔层位于被钉扎层和自由层之间。 所述至少一个阻尼减小层与所述自由层的至少一部分相邻并且被配置为减小所述自由层的固有阻尼常数。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US20120261776A1

公开(公告)日：2012-10-18

申请号：US13332328

申请日：2011-12-20

申请人： Xueti Tang ,  Vladimir Nikitin ,  Dmytro Apalkov ,  Kiseok Moon ,  Steven M. Watts

发明人： Xueti Tang ,  Vladimir Nikitin ,  Dmytro Apalkov ,  Kiseok Moon ,  Steven M. Watts

IPC分类号： H01L29/82 ,  H01L21/18

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675

摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，自由层和至少一个阻尼减小层。 自由层具有固有阻尼常数。 非磁性间隔层位于被钉扎层和自由层之间。 所述至少一个阻尼减小层与所述自由层的至少一部分相邻并且被配置为减小所述自由层的固有阻尼常数。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US20130154036A1

公开(公告)日：2013-06-20

申请号：US13332305

申请日：2011-12-20

申请人： Xueti Tang ,  Dmytro Apalkov ,  Steven M. Watts ,  Kiseok Moon ,  Vladimir Nikitin

发明人： Xueti Tang ,  Dmytro Apalkov ,  Steven M. Watts ,  Kiseok Moon ,  Vladimir Nikitin

IPC分类号： H01L43/10 ,  H01L43/12

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295

摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer adjoining the at least one insulating layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one insulating layer is adjacent to at least one of the free layer and the pinned layer. The at least one magnetic insertion layer adjoins the at least one insulating layer. In some aspects, the insulating layer(s) include at least one of magnesium oxide, aluminum oxide, tantalum oxide, ruthenium oxide, titanium oxide, and nickel oxide The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，自由层，至少一个绝缘层以及与至少一个绝缘层邻接的至少一个磁性插入层。 非磁性间隔层位于被钉扎层和自由层之间。 至少一个绝缘层与自由层和钉扎层中的至少一个相邻。 所述至少一个磁性插入层邻接所述至少一个绝缘层。 在一些方面，绝缘层包括氧化镁，氧化铝，氧化钽，氧化钌，氧化钛和氧化镍中的至少一种。磁结被构造成使得自由层可在多个稳定的 写入电流通过磁性结时的磁状态。

公开(公告)号：US08422285B2

公开(公告)日：2013-04-16

申请号：US13033021

申请日：2011-02-23

申请人： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Alexander A. G. Driskill-Smith ,  Steven M. Watts ,  David Druist

发明人： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Alexander A. G. Driskill-Smith ,  Steven M. Watts ,  David Druist

IPC分类号： G11C11/14

CPC分类号： G11C11/5607 ,  G01R33/098 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The pinned layers are nonmagnetic layer-free and self-pinned. In some aspects, the magnetic junction is configured to allow the free and second pinned layers to be switched between stable magnetic states when write currents are passed therethrough. The magnetic junction has greater than two stable states. In other aspects, the magnetic junction includes at least third and fourth spacer layers, a second free layer therebetween, and a third pinned layer having a pinned layer magnetic moment, being nonmagnetic layer-free, and being coupled to the second pinned layer. The magnetic junction is configured to allow the free layers to be switched between stable magnetic states when write currents are passed therethrough.

摘要翻译： 描述了一种用于提供可用于磁存储器中的磁结的方法和系统。 磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。 固定层是非磁性层，并且是自固定的。 在一些方面，磁结被配置为允许自由和第二被钉扎层在写入电流通过时在稳定的磁状态之间切换。 磁结有两个以上的稳定状态。 在其它方面，磁结包括至少第三和第四间隔层，在它们之间的第二自由层和具有固定层磁矩的第三被钉扎层是非磁性层，并且耦合到第二被钉扎层。 磁结被配置为允许当写入电流通过时自由层在稳定的磁状态之间切换。

公开(公告)号：US20110141804A1

公开(公告)日：2011-06-16

申请号：US13033021

申请日：2011-02-23

申请人： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Alexander A.G. Driskill-Smith ,  Steven M. Watts ,  David Druist

发明人： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Alexander A.G. Driskill-Smith ,  Steven M. Watts ,  David Druist

IPC分类号： G11C11/15 ,  H01L29/82

CPC分类号： G11C11/5607 ,  G01R33/098 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The pinned layers are nonmagnetic layer-free and self-pinned. In some aspects, the magnetic junction is configured to allow the free and second pinned layers to be switched between stable magnetic states when write currents are passed therethrough. The magnetic junction has greater than two stable states. In other aspects, the magnetic junction includes at least third and fourth spacer layers, a second free layer therebetween, and a third pinned layer having a pinned layer magnetic moment, being nonmagnetic layer-free, and being coupled to the second pinned layer. The magnetic junction is configured to allow the free layers to be switched between stable magnetic states when write currents are passed therethrough.

摘要翻译： 描述了一种用于提供可用于磁存储器中的磁结的方法和系统。 磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。 固定层是非磁性层，并且是自固定的。 在一些方面，磁结被配置为允许自由和第二被钉扎层在写入电流通过时在稳定的磁状态之间切换。 磁结有两个以上的稳定状态。 在其它方面，磁结包括至少第三和第四间隔层，在它们之间的第二自由层和具有固定层磁矩的第三被钉扎层是非磁性层，并且耦合到第二被钉扎层。 磁结被配置为允许当写入电流通过时自由层在稳定的磁状态之间切换。

公开(公告)号：US08698259B2

公开(公告)日：2014-04-15

申请号：US13332282

申请日：2011-12-20

申请人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

发明人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

IPC分类号： H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.

摘要翻译： 描述了磁连接。 磁结包括钉扎层，非磁性间隔层和自由层。 磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层被配置为可以使用通过磁结的写入电流来切换。 自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。 在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料 层。

公开(公告)号：US20130154035A1

公开(公告)日：2013-06-20

申请号：US13332282

申请日：2011-12-20

申请人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

发明人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

IPC分类号： H01L27/22 ,  G11B5/84 ,  B05D5/12 ,  G11B5/66 ,  G11B5/673

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.

摘要翻译： 描述了磁连接。 磁结包括钉扎层，非磁性间隔层和自由层。 磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层被配置为可以使用通过磁结的写入电流来切换。 自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。 在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料 层。

公开(公告)号：US09142758B2

公开(公告)日：2015-09-22

申请号：US13495830

申请日：2012-06-13

申请人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin

发明人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L27/22

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228

摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a first pinned layer having a first pinned layer magnetization, a first nonmagnetic spacer layer, and a free layer having an easy axis. The first nonmagnetic spacer layer is between the first pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction and such that the free layer employs precessional switching.

摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括具有第一固定层磁化的第一被钉扎层，第一非磁性间隔层和具有易轴的自由层。 第一非磁性间隔层位于第一被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结并且使得自由层采用进动切换时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US08697484B2

公开(公告)日：2014-04-15

申请号：US13332093

申请日：2011-12-20

申请人： Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi ,  Xueti Tang ,  Se Chung Oh ,  Woo Chang Lim ,  Jang Eun Lee ,  Ki Woong Kim ,  Kyoung Sun Kim

发明人： Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy ,  Vladimir Nikitin ,  Mohamad Towfik Krounbi ,  Xueti Tang ,  Se Chung Oh ,  Woo Chang Lim ,  Jang Eun Lee ,  Ki Woong Kim ,  Kyoung Sun Kim

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

摘要： A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.

摘要翻译： 描述了用于设置磁结中的钉扎层的方向的方法和系统。 一方面，施加大于被钉扎层中的层的矫顽力但小于层之间的耦合场的磁场。 在另一方面，使用自旋转移转矩电流将钉扎层从反双重状态切换到双重状态。 在另一方面，提供了在钉扎层中具有部分垂直各向异性（PPMA）层的磁性结。 在一些方面，PPMA层是合成反铁磁结构的一部分。 在一些实施方案中，在固着层中的PPMA层和另一铁磁层之间提供去耦层。