公开(公告)号：US20120155156A1

公开(公告)日：2012-06-21

申请号：US13035726

申请日：2011-02-25

申请人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang ,  Kiseok Moon ,  Mohamad Towfik Krounbi

发明人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang ,  Kiseok Moon ,  Mohamad Towfik Krounbi

IPC分类号： G11C11/02 ,  G11B5/84 ,  G11B5/64

CPC分类号： G11C11/1675 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01F41/325 ,  H01F41/34

摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

摘要翻译： 描述了一种用于提供使用磁性元件的磁性元件和磁性存储器的方法和系统。 磁性元件用于包括电耦合到磁性元件的触点的磁性装置中。 该方法和系统包括提供固定，非磁性间隔物和自由层。 自由层具有对应于小于面外去磁能的垂直各向异性能的平面退磁能和垂直磁各向异性。 非磁性间隔层位于被钉扎层和自由层之间。 该方法和系统还包括提供与自由层和接触相邻的垂直覆盖层。 垂直覆盖层在自由层中引起至少一部分垂直磁各向异性。 磁性元件被配置为当写入电流通过磁性元件时允许自由层在磁状态之间切换。

公开(公告)号：US10446209B2

公开(公告)日：2019-10-15

申请号：US13035726

申请日：2011-02-25

申请人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang ,  Kiseok Moon ,  Mohamad Towfik Krounbi

发明人： Steven M. Watts ,  Zhitao Diao ,  Xueti Tang ,  Kiseok Moon ,  Mohamad Towfik Krounbi

IPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01F41/32 ,  H01F41/34

摘要： A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

公开(公告)号：US08987006B2

公开(公告)日：2015-03-24

申请号：US13451679

申请日：2012-04-20

申请人： Kiseok Moon ,  Xueti Tang ,  Mohamad Towfik Krounbi

发明人： Kiseok Moon ,  Xueti Tang ,  Mohamad Towfik Krounbi

IPC分类号： H01L21/00 ,  H01L43/08 ,  H01L27/22 ,  H01L43/12

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/224 ,  H01L43/12

摘要： A magnetic junction usable in a magnetic memory and a method for providing the magnetic memory are described. The method includes providing a pinned layer, providing an engineered nonmagnetic tunneling barrier layer, and providing a free layer. The pinned layer and the free layer each include at least one ferromagnetic layer. The engineered nonmagnetic tunneling barrier layer has a tuned resistance area product. In some aspects, the step of providing the engineered nonmagnetic tunneling barrier layer further includes radio-frequency depositing a first oxide layer, depositing a metal layer, and oxidizing the metal layer to provide a second oxide.

摘要翻译： 描述可用于磁存储器的磁结和用于提供磁存储器的方法。 该方法包括提供钉扎层，提供工程非磁性隧道势垒层，并提供自由层。 被钉扎层和自由层各自包括至少一个铁磁层。 工程非磁性隧道势垒层具有调谐电阻区域积。 在一些方面，提供工程非磁性隧道势垒层的步骤还包括射频沉积第一氧化物层，沉积金属层，以及氧化金属层以提供第二氧化物。

公开(公告)号：US20120267736A1

公开(公告)日：2012-10-25

申请号：US13451679

申请日：2012-04-20

申请人： Kiseok Moon ,  Xueti Tang ,  Mohamad Towfik Krounbi

发明人： Kiseok Moon ,  Xueti Tang ,  Mohamad Towfik Krounbi

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/224 ,  H01L43/12

摘要： A magnetic junction usable in a magnetic memory and a method for providing the magnetic memory are described. The method includes providing a pinned layer, providing an engineered nonmagnetic tunneling barrier layer, and providing a free layer. The pinned layer and the free layer each include at least one ferromagnetic layer. The engineered nonmagnetic tunneling barrier layer has a tuned resistance area product. In some aspects, the step of providing the engineered nonmagnetic tunneling barrier layer further includes radio-frequency depositing a first oxide layer, depositing a metal layer, and oxidizing the metal layer to provide a second oxide.

摘要翻译： 描述可用于磁存储器的磁结和用于提供磁存储器的方法。 该方法包括提供钉扎层，提供工程非磁性隧道势垒层，并提供自由层。 被钉扎层和自由层各自包括至少一个铁磁层。 工程非磁性隧道势垒层具有调谐电阻区域积。 在一些方面，提供工程非磁性隧道势垒层的步骤还包括射频沉积第一氧化物层，沉积金属层，以及氧化金属层以提供第二氧化物。

公开(公告)号：US08698259B2

公开(公告)日：2014-04-15

申请号：US13332282

申请日：2011-12-20

申请人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

发明人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

IPC分类号： H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.

摘要翻译： 描述了磁连接。 磁结包括钉扎层，非磁性间隔层和自由层。 磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层被配置为可以使用通过磁结的写入电流来切换。 自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。 在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料 层。

公开(公告)号：US20130154035A1

公开(公告)日：2013-06-20

申请号：US13332282

申请日：2011-12-20

申请人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

发明人： Mohamad Towfik Krounbi ,  Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin

IPC分类号： H01L27/22 ,  G11B5/84 ,  B05D5/12 ,  G11B5/66 ,  G11B5/673

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.

摘要翻译： 描述了磁连接。 磁结包括钉扎层，非磁性间隔层和自由层。 磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层被配置为可以使用通过磁结的写入电流来切换。 自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。 在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料 层。

公开(公告)号：US20120319221A1

公开(公告)日：2012-12-20

申请号：US13495830

申请日：2012-06-13

申请人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin

发明人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin

IPC分类号： H01L27/22 ,  H01L43/12 ,  H01L43/02

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228

摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a first pinned layer having a first pinned layer magnetization, a first nonmagnetic spacer layer, and a free layer having an easy axis. The first nonmagnetic spacer layer is between the first pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction and such that the free layer employs precessional switching.

摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括具有第一固定层磁化的第一被钉扎层，第一非磁性间隔层和具有易轴的自由层。 第一非磁性间隔层位于第一被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结并且使得自由层采用进动切换时，自由层可在多个稳定磁状态之间切换。

公开(公告)号：US08766383B2

公开(公告)日：2014-07-01

申请号：US13517731

申请日：2012-06-14

申请人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin ,  Alexey Vasilyevitch Khvalkovskiy

发明人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin ,  Alexey Vasilyevitch Khvalkovskiy

IPC分类号： H01L29/82 ,  G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： H01L43/10 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the free layer and the pinned layer include at least one half-metal.

摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 自由层和钉扎层中的至少一个包括至少一个半金属。

公开(公告)号：US20130009260A1

公开(公告)日：2013-01-10

申请号：US13517731

申请日：2012-06-14

申请人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin ,  Alexey Vasilyevitch Khvalkovskiy

发明人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin ,  Alexey Vasilyevitch Khvalkovskiy

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the free layer and the pinned layer include at least one half-metal.

摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。 自由层和钉扎层中的至少一个包括至少一个半金属。

公开(公告)号：US09142758B2

公开(公告)日：2015-09-22

申请号：US13495830

申请日：2012-06-13

申请人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin

发明人： Dmytro Apalkov ,  Xueti Tang ,  Mohamad Towfik Krounbi ,  Vladimir Nikitin

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L27/22

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228

摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a first pinned layer having a first pinned layer magnetization, a first nonmagnetic spacer layer, and a free layer having an easy axis. The first nonmagnetic spacer layer is between the first pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction and such that the free layer employs precessional switching.

摘要翻译： 一种方法和系统提供可用于磁性装置的磁结。 磁结包括具有第一固定层磁化的第一被钉扎层，第一非磁性间隔层和具有易轴的自由层。 第一非磁性间隔层位于第一被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结并且使得自由层采用进动切换时，自由层可在多个稳定磁状态之间切换。