公开(公告)号：US20150042208A1

公开(公告)日：2015-02-12

申请号：US14446602

申请日：2014-07-30

Applicant: YOKOGAWA ELECTRIC CORPORATION

Inventor： Takashi YOSHIDA ,  Takeshi MISHIMA ,  Shigeto IWAI ,  Yuusaku YOSHIDA

IPC: H01L41/083 ,  H01L41/331

CPC classification number: H01L41/083 ,  H01L41/331 ,  H03H3/0072 ,  H03H9/1057 ,  Y10T29/42

Abstract: A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole over the resonator, a second layer disposed over the first layer, the second layer covering a gap being positioned above the through-hole and being communicated with the through-hole, and a third layer covering the first layer and the second layer, and the third layer sealing the gap.

Abstract translation: 谐振换能器包括硅单晶衬底，设置在硅单晶衬底上的硅单晶谐振器，由硅构成的外壳，围绕谐振器间隙，并与硅单晶衬底一起形成腔室，令人兴奋的 模块，其被配置为激励所述谐振器;振动检测模块，被配置为检测所述谐振器的振动;第一层，设置在所述腔室上，所述第一层在所述谐振器上方具有通孔;第二层，设置在所述第一层上， 所述间隙覆盖位于所述通孔的上方且与所述通孔连通的间隙，以及覆盖所述第一层和所述第二层的第三层，所述第三层密封所述间隙。

公开(公告)号：US20220120627A1

公开(公告)日：2022-04-21

申请号：US17566326

申请日：2021-12-30

Applicant: Yokogawa Electric Corporation

Inventor： Takashi YOSHIDA ,  Yuusaku YOSHIDA ,  Atsushi YUMOTO ,  Yoshitaka SUZUKI

IPC: G01L7/08 ,  G01L7/02 ,  G01L9/00

Abstract: A resonant pressure sensor includes a first substrate and a resonator. The first substrate includes a diaphragm and a projection disposed on the diaphragm. The resonator is disposed in the first substrate, a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate. The first substrate is an SOI substrate in which a silicon dioxide layer is inserted between a silicon substrate and a superficial silicon layer. The intermediate level of the first substrate is disposed in the silicon substrate, and the resonator is disposed in the projection included in the superficial silicon layer.

公开(公告)号：US20150047434A1

公开(公告)日：2015-02-19

申请号：US14460684

申请日：2014-08-15

Applicant: YOKOGAWA ELECTRIC CORPORATION

Inventor： Takashi Yoshida ,  Yuusaku YOSHIDA ,  Atsushi YUMOTO ,  Yoshitaka SUZUKI

IPC: G01L7/08 ,  G01L7/02

CPC classification number: G01L7/082 ,  G01L7/022 ,  G01L7/08 ,  G01L9/0008 ,  G01L9/0047 ,  Y10T29/4913

Abstract: A resonant pressure sensor includes a first substrate including a diaphragm and at least one projection disposed on the diaphragm, and at least one resonator disposed in the first substrate, at least a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate.

Abstract translation: 谐振压力传感器包括：第一衬底，包括隔膜和设置在隔膜上的至少一个突起;以及设置在第一衬底中的至少一个谐振器，所述谐振器的至少一部分包括在所述突起中，并且所述谐振器被布置 在所述突起的顶部和所述第一基板的中间水平面之间。