公开(公告)号：US20140313835A1

公开(公告)日：2014-10-23

申请号：US14242406

申请日：2014-04-01

Applicant: Yongkyu Lee ,  BoGeun KIM

Inventor： Yongkyu Lee ,  BoGeun KIM

IPC: G11C16/10

CPC classification number: G11C16/10 ,  G11C7/02 ,  G11C7/1006 ,  G11C11/5628 ,  G11C16/3418

Abstract: A data programming method of a semiconductor memory device is provided which includes randomizing write data using a randomization method selected from among a plurality of randomization methods according to whether the write data is programmed in one of a plurality of nonvolatile memories; and programming the randomized write data in at least one of the plurality of nonvolatile memories, wherein the plurality of nonvolatile memories has different types from one another.

Abstract translation: 提供一种半导体存储器件的数据编程方法，其包括使用根据所述写入数据是否被编程在多个非易失性存储器之一中的从多种随机化方法中选择的随机化方法来随机化写入数据; 以及将所述随机写入数据编程在所述多个非易失性存储器中的至少一个中，其中所述多个非易失性存储器具有彼此不同的类型。

公开(公告)号：US20150270008A1

公开(公告)日：2015-09-24

申请号：US14664125

申请日：2015-03-20

Applicant: Doohyun KIM ,  BoGeun KIM ,  Kitae PARK ,  Jinman HAN

Inventor： Doohyun KIM ,  BoGeun KIM ,  Kitae PARK ,  Jinman HAN

IPC: G11C16/34 ,  G11C16/24 ,  G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/7201 ,  G11C11/5621 ,  G11C16/0483

Abstract: According to example embodiments, a method of operating a storage device includes reading a process capability index using a memory controller, adjusting at least one operation condition based on the process capability index, and operating one of at least one nonvolatile memory device according to the at least one operation condition adjusted. The process capability index indicates how a structure associated with a memory cell to be operated deviates from a target shape.

Abstract translation: 根据示例性实施例，一种操作存储设备的方法包括使用存储器控制器读取过程能力指数，基于过程能力指数来调整至少一个操作条件，以及根据at处理至少一个非易失性存储器设备 调整至少一个操作条件。 过程能力指数指示与要操作的存储器单元相关联的结构如何偏离目标形状。