公开(公告)号：US08828254B2

公开(公告)日：2014-09-09

申请号：US13363415

申请日：2012-02-01

申请人： Yoshiharu Inoue ,  Tetsuo Ono ,  Michikazu Morimoto ,  Masaki Fujii ,  Masakazu Miyaji

发明人： Yoshiharu Inoue ,  Tetsuo Ono ,  Michikazu Morimoto ,  Masaki Fujii ,  Masakazu Miyaji

IPC分类号： C03C15/00 ,  H01L21/3213 ,  H01J37/32

CPC分类号： H01J37/32266 ,  H01J37/32192 ,  H01J37/3266 ,  H01J37/32935 ,  H01J2237/2485 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32137 ,  H01L21/67069 ,  H01L22/26

摘要： A plasma processing method and a plasma processing apparatus in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

摘要翻译： 一种等离子体处理方法和等离子体处理装置，其中可以从低微波功率到高微波功率的宽范围内确保稳定的处理区域。 等离子体处理方法包括通过连续放电难以制造等离子体的区域以及通过所产生的等离子体等离子体处理被处理物的区域容易地制造等离子体，其中通过脉冲放电产生等离子体，其中ON 和OFF），在ON期间产生脉冲放电的射频功率是通过连续放电促进等离子体生产的功率，并且控制脉冲放电的占空比使得无线电的平均功率 每个循环的频率功率是在难以通过连续放电产生等离子体的区域中的功率。

公开(公告)号：US08801951B2

公开(公告)日：2014-08-12

申请号：US13210490

申请日：2011-08-16

申请人： Yoshiharu Inoue ,  Michikazu Morimoto ,  Tsuyoshi Matsumoto ,  Tetsuo Ono ,  Tadamitsu Kanekiyo ,  Mamoru Yakushiji ,  Masakazu Miyaji

发明人： Yoshiharu Inoue ,  Michikazu Morimoto ,  Tsuyoshi Matsumoto ,  Tetsuo Ono ,  Tadamitsu Kanekiyo ,  Mamoru Yakushiji ,  Masakazu Miyaji

IPC分类号： C03C15/00

CPC分类号： H01L21/31116

摘要： In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to plasma and a second period during which the object to be processed is exposed to plasma and an etching rate is lower as compared with the first period. Consequently, particles due to increase in the number of processed sheets of the object to be processed can be suppressed.

摘要翻译： 在等离子体处理方法中，通过在施加射频电力的状态下，通过从引入到处理室中的沉积气体产生等离子体并将待处理物体暴露于等离子体，对待处理对象进行蚀刻， 在处理室的内壁上的沉积膜通过重复将被处理物暴露于等离子体的第一期间和第二期间，使被处理室的暴露于 等离子体和蚀刻速率比第一阶段低。 因此，能够抑制由于加工对象物的加工张数而增加的粒子。