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公开(公告)号：US11737364B2
公开(公告)日：2023-08-22
申请号：US16981586
申请日：2018-12-28
发明人： Masahiro Adachi , Kotaro Hirose , Makoto Kiyama , Takashi Matsuura , Yoshiyuki Yamamoto , Tsunehiro Takeuchi , Shunsuke Nishino
IPC分类号： H01L35/16 , H10N10/852 , C01B19/04 , G01J5/12 , H10N10/857
CPC分类号： H10N10/852 , C01B19/04 , G01J5/12 , H10N10/857
摘要： A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.
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公开(公告)号：US11683984B2
公开(公告)日：2023-06-20
申请号：US17256120
申请日：2019-07-04
申请人： LG INNOTEK CO., LTD.
发明人： Un Hak Lee , Jong Hyun Kang
摘要： A heat conversion device according to an embodiment of the present invention comprises: a frame comprising multiple unit modules arranged in a first direction and in a second direction intersecting with the first direction, respectively, and a first cooling water inflow tube and a first cooling water discharge tube formed along the first direction so as to support the multiple unit modules; multiple second cooling water inflow tubes connected to the first cooling water inflow tube and arranged on one side of the multiple unit modules along the second direction; and multiple second cooling water discharge tubes connected to the first cooling water discharge tube and arranged on the other side of the multiple unit modules along the second direction. Each unit module comprises a cooling water passage chamber, a first thermoelectric module arranged on a first surface of the cooling water passage chamber, and a second thermoelectric module arranged on a second surface of the cooling water passage chamber. A cooling water inflow port is formed on a third surface between the first and second surfaces of the cooling water passage chamber. A cooling water discharge port is formed on a fourth surface between the first and second surface of the cooling water passage chamber. The cooling water inflow port is connected to the second cooling water inflow tubes, and the cooling water discharge port is connected to the second cooling water discharge tubes.
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公开(公告)号：US20230012332A1
公开(公告)日：2023-01-12
申请号：US17949209
申请日：2022-09-20
申请人： Sheetak, Inc.
发明人： Uttam Ghoshal
摘要： The present disclosure is related to structures for and methods for producing thermoelectric devices. The thermoelectric devices include multiple stages of thermoelements. Each stage includes alternating n-type and p-type thermoelements. The stages are sandwiched between upper and lower sets of metal links fabricated on a pair of substrate layers. The metal links electrically connect pairs of n-type and p-type thermoelements from each stage. There may be additional sets of metal links between the multiple stages. The individual thermoelements may be sized to handle differing amounts of electric current to optimize performance based on their location within the multistage device.
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4.发明申请公开(公告)号：US20220384700A1
公开(公告)日：2022-12-01
申请号：US17773811
申请日：2020-10-14
发明人： Jae-Hong LIM , Young Soo YOON , Kang Yeol LEE
摘要： Proposed are an organic-inorganic composite thermoelectric material and a preparation method thereof. The organic-inorganic composite thermoelectric material includes an organic matrix and an inorganic thermoelectric portion dispersed in the organic matrix and including a nanomaterial. The organic matrix includes an organic conductor, and the nanomaterial includes at least one selected from the group consisting of a chalcogen element and a chalcogenide. The organic-inorganic composite thermoelectric material of the present invention has advantages of low cost and excellent thermoelectric properties through complexation of an aligned inorganic thermoelectric material and an organic thermoelectric material.
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公开(公告)号：US11462670B2
公开(公告)日：2022-10-04
申请号：US16328300
申请日：2017-08-29
摘要： A thermoelectric conversion material includes: a base material that is a semiconductor; and an additive element that differs from an element constituting the base material. An additional band formed of the additive element is present within a forbidden band of the base material. A density of states of the additional band has a ratio of greater than or equal to 0.1 relative to a maximum value of a density of states of a valence band adjacent to the forbidden band of the base material.
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公开(公告)号：US20220285571A1
公开(公告)日：2022-09-08
申请号：US17686788
申请日：2022-03-04
发明人： Rama Venkatasubramanian , Meiyong Himmtann , Priyadharshini Gajendiran , Jonathan M. Pierce , Nathan J. Fairbanks , Richard J. Ung , Jacob L. Ballard , Jeffrey P. Maranchi
IPC分类号： H01L31/052 , H01L35/16 , H01L31/0687 , H01L25/16 , H01L31/18
摘要： Systems, apparatuses, and methods are provided for manufacturing nano-engineered thin-film thermoelectric (NETT) devices for photovoltaic applications, such as NETT converters that harness the coldness of space for satellite applications or for integration with terrestrial PV. An example method can include mounting a thin-film thermoelectric device to a photovoltaic device. The example method can further include mounting a heat sink device to the thin-film thermoelectric device. The example method can further include mounting a radiator device or heat exchanger device to the heat sink device.
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公开(公告)号：US20220278263A1
公开(公告)日：2022-09-01
申请号：US17631495
申请日：2020-08-06
摘要： A thermoelectric conversion material is represented by a composition formula Ag2S(1-x)Sex, where x has a value of greater than 0.01 and smaller than 0.6.
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公开(公告)号：US20220223777A1
公开(公告)日：2022-07-14
申请号：US17365245
申请日：2021-07-01
发明人： Sang Sig KIM , Kyoung Ah CHO , Yoon Beom PARK
摘要： The present disclosure relates to an integrated dual-sided all-in-one energy system including a plurality of vertically stacked dual-sided all-in-one energy apparatuses, each including an energy-harvesting device and an energy-storage device disposed on both sides of a substrate, and according to one embodiment of the present disclosure, an integrated dual-sided all-in-one energy system may include a plurality of dual-sided all-in-one energy apparatuses, each including an energy-harvesting device that is formed as an electrode pattern on one side of a substrate and generates electrical energy by harvesting energy based on a temperature difference between a first side and a second side and an energy-storage device that is formed on the other side of the substrate and is selectively connected to the energy-harvesting device based on the electrode pattern to store the generated electrical energy.
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公开(公告)号：US11384107B2
公开(公告)日：2022-07-12
申请号：US17050655
申请日：2019-04-26
摘要： Provided is an easy-to-process thermoelectric conversion device whose shape can be freely changed. The device is provided containing electrodes and an ionic solid, wherein the ionic solid has: an anionic heterometal complex aggregated to form a crystal lattice; and a cationic species present in interstices of the crystal lattice, and wherein the anionic heterometal complex includes: a metal M1 selected from the group consisting of the elements of Groups 8, 9 and 10 of the Periodic Table and Cr and Mn; a metal M2 selected from the group consisting of the elements of Groups 11 and 12 of the Periodic Table; and a ligand.
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公开(公告)号：US11342490B2
公开(公告)日：2022-05-24
申请号：US16998412
申请日：2020-08-20
申请人： LG INNOTEK CO., LTD.
发明人： Tsuyoshi Tosho
IPC分类号： H01L35/16 , H01L35/32 , H01L35/34 , H01L35/18 , H01L35/26 , H01L35/12 , H01L35/02 , H01L35/10
摘要： A method may be provided of manufacturing a thermoelectric leg. The method may include preparing a first metal substrate including a first metal, and forming a first plated layer including a second metal on the first metal substrate. The method may also include disposing a layer including tellurium (Te) on the first plated layer, and forming a portion of the first plated layer as a first bonding layer by reacting the second metal and the Te. The method also includes disposing a thermoelectric material layer including bismuth (Bi) and Te on an upper surface of the first bonding layer, and disposing a second metal substrate, on which a second bonding layer and a second plated layer are formed, on the thermoelectric material layer, and sintering.
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