Abstract:
Disclosed is a stateful logic-in-memory using silicon diodes. More particularly, the stateful logic-in-memory according to an embodiment of the present invention includes a plurality of silicon diodes, each of the silicon diodes includes an anode region, a first channel region, a second channel region and a cathode region and is included as a memory cell.
Abstract:
The present invention provides a thermoelectric generator module including one or more module unit bodies disposed between a hot source and a cold source to serve as fundamental structures for performing thermoelectric power generation, wherein the module unit bodies are disposed on a exhaust pipe interposed between the hot source and the cold source, and provides a method of manufacturing the thermoelectric generator module.
Abstract:
The present disclosure relates to an energy harvesting system for generating electrical energy by using a solar cell and a thermoelectric device. The energy harvesting system according to one embodiment of the present disclosure may include a solar cell for generating electrical energy based on sunlight; an interface layer located under the solar cell and including a heat transfer layer for transferring heat generated by the solar cell; a thermoelectric device located under the interface layer, including a first electrode, a second electrode, and a thermoelectric channel located between the first and second electrodes, and configured to generate electrical energy based on a temperature difference between the first and second electrodes that occurs when heat generated by the solar cell is transferred to the first electrode through the heat transfer layer; and a cooling layer located under the thermoelectric device and cooling the second electrode to increase the temperature difference.
Abstract:
The present disclosure relates to a novel neuron circuit using a p-n-p-n diode to realize small size and low power consumption. The neuron circuit according to one embodiment of the present disclosure may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a critical value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a p-n-p-n diode connected to the capacitor.
Abstract:
The present disclosure relates to an energy harvesting technology for generating electrical energy by using a combination of a solar cell and a thermoelectric device. An energy harvesting system according to one embodiment of the present disclosure may include a solar cell for generating electrical energy based on sunlight; a heat transfer layer formed on at least one edge portion of the upper surface of the solar cell on which sunlight is incident; and a thermoelectric device including a first electrode, a second electrode, a thermoelectric channel disposed between the first and second electrodes, having a horizontal structure in which the first electrode is disposed on the heat transfer layer to be arranged horizontally with respect to the solar cell, and configured to generate additional electrical energy based on the temperature difference between the first and second electrodes.
Abstract:
Provided is a spike pulse generation circuit comprising a single silicon device configured to non-periodically or periodically generate a spike pulse. More particularly, the spike pulse generation circuit comprising the single silicon device can utilize a positive feedback loop and a negative feedback loop to be mutually connected so as to selectively output a spike pulse related to a neural oscillation function similar to biological oscillation, thereby being capable of serving as a ring oscillator and performing a neuron function operation.
Abstract:
The present invention provides a method of manufacturing a nanofiber-based thermoelectric generator module, the method comprising: an electrode formation step of forming a plurality of electrodes and a plurality of second electrodes so as to be spaced apart from and opposite to each other in an alternately staggered arrangement relative to each other; a first nanofiber arrangement step of arranging a first nonofiber including an n-type or p-type semiconductor; and a second nanofiber arrangement step of arranging a second nonofiber including a semiconductor of a type different from the type of the semiconductor forming the first nanofiber, a nanofiber-based thermoelectric generator module manufactured by the method, and an electrospinning apparatus of manufacturing nanofibers for the nanofiber-based thermoelectric generator module.
Abstract:
The present disclosure relates to a novel integrate-and-fire (IF) neuron circuit using a single-gated feedback field-effect transistor (FBFET) to realize small size and low power consumption. According to the present disclosure, the neuron circuit according to one embodiment may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a threshold value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a single-gated feedback field-effect transistor connected to the capacitor. Then, the neuron circuit may reset the generated spike voltage using transistors connected to the feedback field-effect transistor.
Abstract:
The present disclosure discloses a transposable feedback field-effect electronic device and an array circuit using the feedback field-effect electronic device. According to one embodiment of the present disclosure, the feedback field-effect electronic device may include a diode structure, a plurality of gate electrodes, and a plurality of access electronic devices, wherein, when the diode structure receives voltage through a first gate electrode of the gate electrodes and a first access electronic device of the access electronic devices, first direction access may be performed, and when the diode structure receives voltage through a second gate electrode of the gate electrodes and a second access electronic device of the access electronic devices, second direction access may be performed.
Abstract:
The present disclosure discloses a feedback field-effect electronic device using a feedback loop operation and an array circuit using the feedback field-effect electronic device. According to one embodiment of the present disclosure, the array circuit includes a plurality of feedback field-effect electronic devices in which the source region of a diode structure and the drain region of an access electronic device are connected in series, wherein the diode structure is connected to a bit line and a first word line, the access electronic device is connected to a source line and a second word line, and a random access operation is performed by selectively applying voltage to the bit line and the first and second word lines.