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公开(公告)号：US20220285602A1
公开(公告)日：2022-09-08
申请号：US17637805
申请日：2020-09-16
摘要： A thermoelectric conversion material is constituted of a semiconductor that contains a constituent element and an additive element having a difference of 1 in the number of electrons in an outermost shell from the constituent element, the additive element having a concentration of not less than 0.01 at % and not more than 30 at %. The semiconductor has a microstructure including an amorphous phase and a granular crystal phase dispersed in the amorphous phase. The amorphous phase includes a first region in which the concentration of the additive element is a first concentration, and a second region in which the concentration of the additive element is a second concentration lower than the first concentration. The first concentration and the second concentration have a difference of not less than 15 at % and not more than 25 at % therebetween.
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公开(公告)号：US20210167270A1
公开(公告)日：2021-06-03
申请号：US17262980
申请日：2019-07-04
摘要： A thermoelectric conversion element includes: a thermoelectric conversion material portion composed of a material having a band gap; a first electrode disposed in contact with the thermoelectric conversion material portion; a second electrode disposed in contact with the thermoelectric conversion material portion and disposed to be separated from the first electrode; and a sealing portion that seals the thermoelectric conversion material portion. A partial pressure of oxygen in a region surrounding the thermoelectric conversion material portion is maintained by the sealing portion so as to be lower than a partial pressure of oxygen in an external air.
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公开(公告)号：US20220399485A1
公开(公告)日：2022-12-15
申请号：US17635379
申请日：2020-06-24
摘要： A thermoelectric conversion element includes a thermoelectric conversion material portion having a compound semiconductor composed of first base material element A and second base material element B and represented by Ax-cBy with value of x being smaller by c with respect to a compound AxBy according to a stoichiometric ratio, a first electrode disposed in contact with the thermoelectric conversion material portion, and a second electrode disposed in contact with the thermoelectric conversion material portion and apart from the first electrode. An A-B phase diagram includes a first region corresponding to low temperature phase, second region corresponding to high temperature phase, and third region corresponding to coexisting phase, sandwiched between the low temperature phase and the high temperature phase, in which the low and high temperature phases coexist. A temperature at a boundary between the first region and the third region changes monotonically with a change in c.
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公开(公告)号：US20220310898A1
公开(公告)日：2022-09-29
申请号：US17633583
申请日：2020-06-25
摘要： A thermoelectric conversion material is represented by a composition formula Ag2S(1-x)Sex. The value of x is not smaller than 0.2 and not greater than 0.95.
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公开(公告)号：US20220416143A1
公开(公告)日：2022-12-29
申请号：US17620742
申请日：2020-06-19
摘要： A thermoelectric conversion material includes a base material that is a semiconductor having Si and Ge as constituent elements, a first additive element that is different from the constituent elements, has a vacant orbital in a d or f orbital located inside an outermost shell thereof, and forms a first additional level in a forbidden band of the base material, and oxygen. The oxygen content ratio is 6 at % or less.
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公开(公告)号：US20220278263A1
公开(公告)日：2022-09-01
申请号：US17631495
申请日：2020-08-06
摘要： A thermoelectric conversion material is represented by a composition formula Ag2S(1-x)Sex, where x has a value of greater than 0.01 and smaller than 0.6.
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公开(公告)号：US20210265550A1
公开(公告)日：2021-08-26
申请号：US16973194
申请日：2019-03-26
摘要： A thermoelectric conversion material is composed of a compound semiconductor including a plurality of base material elements, and includes: an amorphous phase; and crystal phases having an average grain size of more than or equal to 5 nm, each of the crystal phases being in a form of a grain. The plurality of base material elements include a specific base material element that causes an increase of a band gap by increasing a concentration of the specific base material element. An atomic concentration of the specific base material element included in the crystal phases with respect to a whole of the plurality of base material elements included in the crystal phases is higher than an atomic concentration of the specific base material element included in the compound semiconductor with respect to a whole of the plurality of base material elements included in the compound semiconductor.
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8.发明公开公开(公告)号：US20240334832A1
公开(公告)日：2024-10-03
申请号：US18574080
申请日：2022-02-25
IPC分类号： H10N10/817 , H10N10/01 , H10N10/82 , H10N10/851
CPC分类号： H10N10/817 , H10N10/01 , H10N10/82 , H10N10/8556
摘要： A thermoelectric conversion element includes a first electrode, a thermoelectric conversion material portion configured to convert heat into electricity, an intermediate layer arranged on the thermoelectric conversion material portion, a conductive bonding material arranged in between the intermediate layer and the first electrode to bond the first electrode to the intermediate layer, and a second electrode connected to the thermoelectric conversion material portion. The intermediate layer includes a first layer arranged on the thermoelectric conversion material portion and containing a dopant, and a second layer arranged on the first layer and configured to suppress diffusion of elements. The intermediate layer has an interface resistivity of not less than 0.0001 mΩcm2 and not more than 0.5 mΩcm2.
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公开(公告)号：US20220310897A1
公开(公告)日：2022-09-29
申请号：US17633578
申请日：2020-07-15
摘要： A thermoelectric conversion material is represented by a composition formula Ag2-xαxS, where α is one selected from among Ni, V, and Ti. The value of x is greater than 0 and smaller than 0.6.
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公开(公告)号：US20210091289A1
公开(公告)日：2021-03-25
申请号：US16981586
申请日：2018-12-28
发明人： Masahiro ADACHI , Kotaro HIROSE , Makoto KIYAMA , Takashi MATSUURA , Yoshiyuki YAMAMOTO , Tsunehiro TAKEUCHI , Shunsuke NISHINO
摘要： A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.
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