公开(公告)号：US20150225635A1

公开(公告)日：2015-08-13

申请号：US14684206

申请日：2015-04-10

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD. ,  A.L.M.T. Corp.

Inventor： Isao IWAYAMA ,  Yoshihiro NAKAI ,  Taichiro NISHIKAWA ,  Yoshiyuki TAKAKI ,  Misato KUSAKARI ,  Toshiya IKEDA

IPC: C09K5/14 ,  H01L23/373 ,  B32B15/01

CPC classification number: C09K5/14 ,  B22D19/14 ,  B22F2998/00 ,  B32B15/01 ,  C22C1/1036 ,  C22C1/1068 ,  C22C29/02 ,  C22C29/065 ,  C22C32/00 ,  C22C32/0063 ,  H01L23/3733 ,  H01L23/3736 ,  H01L23/3738 ,  H01L2924/0002 ,  Y10T428/12049 ,  Y10T428/12576 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/249969 ,  Y10T428/259 ,  B22F1/02 ,  H01L2924/00

Abstract: A composite member suitable for a heat radiation member of a semiconductor element and a method of manufacturing the same are provided. This composite member is a composite of magnesium or a magnesium alloy and SiC, and it has porosity lower than 3%. This composite member can be manufactured by forming an oxide film on a surface of raw material SiC, arranging coated SiC having the oxide film formed in a cast, and infiltrating this coated SiC aggregate with a molten metal (magnesium or the magnesium alloy). The porosity of the composite member can be lowered by improving wettability between SiC and the molten metal by forming the oxide film. According to this manufacturing method, a composite member having excellent thermal characteristics such as a coefficient of thermal expansion not lower than 4 ppm/K and not higher than 10 ppm/K and thermal conductivity not lower than 180 W/m·K can be manufactured.

Abstract translation: 提供一种适用于半导体元件的散热构件的复合构件及其制造方法。 该复合构件是镁或镁合金与SiC的复合材料，其孔隙率低于3％。 该复合部件可以通过在原料SiC的表面上形成氧化膜，配置具有形成于铸型中的氧化膜的被覆SiC，并用熔融金属（镁或镁合金）渗透该被覆SiC集合体来制造。 通过形成氧化膜，可以通过改善SiC与熔融金属之间的润湿性来降低复合构件的孔隙率。 根据该制造方法，可以制造具有不低于4ppm / K且不高于10ppm / K的热膨胀系数以及不低于180W / m·K的热导率的热特性优异的复合构件 。

公开(公告)号：US20140141281A1

公开(公告)日：2014-05-22

申请号：US14130204

申请日：2013-03-12

Applicant: A.L.M.T. Corp.

Inventor： Takanori Kadokura ,  Hidenobu Nishino ,  Ayuri Tsuji ,  Shigekazu Yamazaki ,  Akihiko Ikegaya

IPC: B21C25/02 ,  C22C27/04

CPC classification number: C22C27/04 ,  B21C25/025 ,  B22F3/17 ,  B22F3/20 ,  C22C1/045 ,  C22C1/0491 ,  C22C32/0031 ,  C22C32/0052 ,  C22C38/44 ,  C22C38/50 ,  Y10T428/12819 ,  Y10T428/12826 ,  Y10T428/12847 ,  Y10T428/24355 ,  Y10T428/265

Abstract: A heat-resistant molybdenum alloy of this invention comprises a first phase containing Mo as a main component and a second phase comprising a Mo—Si—B-based intermetallic compound particle phase, wherein the balance is an inevitable impurity and wherein the Si content is 0.05 mass % or more and 0.80 mass % or less and the B content is 0.04 mass % or more and 0.60 mass % or less.

Abstract translation: 本发明的耐热钼合金包含含有Mo作为主要成分的第一相和包含Mo-Si-B系金属间化合物粒子相的第二相，其中余量为不可避免的杂质，Si含量为 0.05质量％以上且0.80质量％以下，B含量为0.04质量％以上且0.60质量％以下。