公开(公告)号：US20130045588A1

公开(公告)日：2013-02-21

申请号：US13509551

申请日：2011-12-05

Applicant: Huicai Zhong ,  Jun Luo ,  Chao Zhao ,  Qingqing Liang

Inventor： Huicai Zhong ,  Jun Luo ,  Chao Zhao ,  Qingqing Liang

IPC: H01L21/20

CPC classification number: H01L29/6653 ,  H01L29/78

Abstract: A method for manufacturing a semiconductor device is disclosed, comprising: providing a substrate, a gate region on the substrate and a semiconductor region at both sides of the gate region; forming sacrificial spacers, which cover a portion of the semiconductor region, on sidewalls of the gate region; forming a metal layer on a portion of the semiconductor region outside the sacrificial spacers and on the gate region; removing the sacrificial spacers; performing annealing so that the metal layer reacts with the semiconductor region to form a metal-semiconductor compound layer on the semiconductor region; and removing unreacted metal layer. By separating the metal layer from the channel and the gate region of the device with the thickness of the sacrificial spacers, the effect of metal layer diffusion on the channel and the gate region is reduced and performance of the device is improved.

Abstract translation: 公开了一种制造半导体器件的方法，包括：提供衬底，衬底上的栅极区域和栅极区两侧的半导体区域; 在所述栅极区域的侧壁上形成覆盖所述半导体区域的一部分的牺牲间隔物; 在牺牲间隔物外部和栅极区域上的半导体区域的一部分上形成金属层; 去除牺牲隔离物; 进行退火，使得金属层与半导体区域反应，以在半导体区域上形成金属 - 半导体化合物层; 并除去未反应的金属层。 通过将金属层与器件的栅极区域与牺牲间隔物的厚度分开，金属层扩散对沟道和栅极区域的影响降低，并且器件的性能得到改善。

公开(公告)号：US20120261803A1

公开(公告)日：2012-10-18

申请号：US13394935

申请日：2011-10-17

Applicant: Wenwu Wang ,  Chao Zhao ,  Kai Han ,  Dapeng Chen

Inventor： Wenwu Wang ,  Chao Zhao ,  Kai Han ,  Dapeng Chen

IPC: H01L21/31 ,  H01L29/02

CPC classification number: C23C14/08 ,  C23C14/5806 ,  C23C16/401 ,  C23C16/56

Abstract: The present invention forms Hf1-xSixOy having a cubic phase or a tetragonal phase by doping a specific amount of SiO2 component into the high-K gate dielectric material HfO2 in combination with an optimized thermal processing technique, to thereby acquire a high-K gate dielectric thin film material having a greater bandgap, a higher K value and high thermal stability. Besides, the high-K gate dielectric thin film and a preparation method thereof proposed in the present invention are helpful to solve the problem of crystallization of ultra-thin films.

Abstract translation: 本发明通过与优化的热处理技术结合，将特定量的SiO 2成分掺入到高K栅介质材料HfO 2中，形成具有立方相或四方相的Hf1-xSixOy，从而获得高K栅极电介质 具有较大带隙，较高K值和高热稳定性的薄膜材料。 此外，本发明中提出的高K栅介质薄膜及其制备方法有助于解决超薄膜结晶的问题。

公开(公告)号：US20120080792A1

公开(公告)日：2012-04-05

申请号：US13143507

申请日：2011-02-17

Applicant: Chao Zhao

Inventor： Chao Zhao

IPC: H01L23/52 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76834 ,  H01L21/76873 ,  H01L21/76885 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There is provided a method for forming a metal interlayer via, comprising: forming a seed layer on a first dielectric layer and a first metal layer embedded in the first dielectric layer; forming a mask pattern on the seed layer to expose a portion of the seed layer covering some of the first metal layer; growing a second metal layer on the exposed portion of the seed layer; removing the mask pattern and a portion of the seed layer carrying the mask pattern to expose side walls of the second metal layer, a portion of the first metal layer and the first dielectric layer; forming an insulating barrier layer on the side walls, the portion of the first metal layer and the first dielectric layer. There is also provided a method for forming a metal interconnection line. Both of them can suppress the occurrence of voids. There is further provided a metal interconnection structure comprising a contact plug, a via and a metal interconnection line, wherein the via is formed on the metal interconnection line, the metal gate and/or the contact plug.

Abstract translation: 提供一种用于形成金属中间层通孔的方法，包括：在第一电介质层上形成晶种层和嵌入第一介电层中的第一金属层; 在种子层上形成掩模图案以暴露覆盖一些第一金属层的种子层的一部分; 在种子层的暴露部分上生长第二金属层; 去除掩模图案和携带掩模图案的种子层的一部分以暴露第二金属层的侧壁，第一金属层和第一介电层的一部分; 在侧壁上形成绝缘阻挡层，第一金属层和第一介电层的部分。 还提供了一种用于形成金属互连线的方法。 他们都可以抑制空洞的发生。 还提供了一种金属互连结构，其包括接触插塞，通孔和金属互连线，其中通孔形成在金属互连线，金属栅极和/或接触插塞上。

公开(公告)号：US20110158259A1

公开(公告)日：2011-06-30

申请号：US12868200

申请日：2010-08-25

Applicant: Ting-Hsuan Chen ,  Gaung-Hui Gu ,  Ying-Chiang Hu ,  Tsung-Min Hsieh ,  Jun-Chao Zhao

Inventor： Ting-Hsuan Chen ,  Gaung-Hui Gu ,  Ying-Chiang Hu ,  Tsung-Min Hsieh ,  Jun-Chao Zhao

IPC: H04J1/00

CPC classification number: G06F17/14 ,  H04J1/05

Abstract: An apparatus and method for frequency division and filtering are provided. The apparatus includes a memory unit, an extrema calculation unit, and an envelope calculation unit. The memory unit is for storing sample data. The extrema calculation unit is for outputting and storing a number of maximum values and a number of minimum values to the memory unit according to the sample data. The envelope calculation unit is for calculating a mean envelope according to the maximum values and the minimum values, wherein within a duration when the envelope calculation unit respectively calculates an upper envelope and a lower envelope according to the maximum values and the minimum values, the envelope calculation unit outputs a value of the mean envelope to the memory unit according to a value of the upper envelope and a value of the lower envelope with respect to a corresponding identical address.

Abstract translation: 提供了一种用于分频和滤波的装置和方法。 该装置包括存储器单元，极值计算单元和包络计算单元。 存储单元用于存储采样数据。 极值计算单元用于根据样本数据将多个最大值和最小值的数量存储到存储器单元。 信封计算单元用于根据最大值和最小值计算平均包络，其中在包络计算单元根据最大值和最小值分别计算上包络和下包络的持续时间内，包络 计算单元根据上包络的值和相对于相应相同地址的下包络的值将平均包络的值输出到存储器单元。

公开(公告)号：US07587549B1

公开(公告)日：2009-09-08

申请号：US11539392

申请日：2006-10-06

Applicant: Ambalavanar Arulambalam ,  Jian-Guo Chen ,  Nevin C. Heintze ,  Qian Gao Xu ,  Jun Chao Zhao

Inventor： Ambalavanar Arulambalam ,  Jian-Guo Chen ,  Nevin C. Heintze ,  Qian Gao Xu ,  Jun Chao Zhao

IPC: G06F5/12

CPC classification number: G06F3/0659 ,  G06F3/0613 ,  G06F3/0656 ,  G06F3/0676

Abstract: A method includes assigning each of a plurality of disk write and disk read requests to respective ones of a plurality of queues. Each queue has an occupancy level and a weight. A score is assigned to each of the plurality of queues, based on the occupancy and weight of the respective queue. An operation type is selected to be granted a next disk access. The selection is from the group consisting of disk write, disk read, and processor request. One of the queues is selected based on the score assigned to each queue, if the selected operation type is disk write request or disk read request. The next disk access is granted to the selected operation type and, if the selected operation type is disk write or disk read, to the selected queue.

Abstract translation: 一种方法包括将多个盘写入和盘读取请求中的每一个分配给多个队列中的相应的一个。 每个队列具有占用等级和权重。 基于相应队列的占有率和权重，将得分分配给多个队列中的每一个队列。 选择操作类型以被授予下一个磁盘访问。 该选择来自由磁盘写入，磁盘读取和处理器请求组成的组。 如果选择的操作类型是磁盘写入请求或磁盘读取请求，则根据分配给每个队列的分数选择其中一个队列。 下一个磁盘访问被授予所选择的操作类型，并且如果所选择的操作类型是磁盘写入或磁盘读取，则返回到所选择的队列。