公开(公告)号：US20100315735A1

公开(公告)日：2010-12-16

申请号：US12456290

申请日：2009-06-15

申请人： Yuchen Zhou ,  Kenichi Takano ,  Xuhui Jin ,  Erhard Schreck ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Xuhui Jin ,  Erhard Schreck ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/02

CPC分类号： G11B5/314 ,  G11B5/02 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/6088 ,  G11B2005/0005 ,  G11B2005/0021 ,  Y10T29/49032

摘要： A TAMR (Thermal Assisted Magnetic Recording) write head uses the energy of optical-laser generated plasmons in a plasmon antenna to locally heat a magnetic recording medium and reduce its coercivity and magnetic anisotropy. To enable the TAMR head to operate most effectively, the maximum gradient of the magnetic recording field should be concentrated in the small region being heated. Typically this does not occur because the spot being heated by the antenna is offset from the position at which the magnetic pole concentrates its magnetic field. The present invention incorporates a magnetic core within a plasmon antenna, so the antenna effectively becomes an extension of the magnetic pole and produces a magnetic field whose maximum gradient overlaps the region being heated by edge plasmons being generated in a conducting layer surrounding the antenna's magnetic core.

摘要翻译： TAMR（热辅助磁记录）写头使用等离子体天线中激光产生的等离子体激元的能量来局部加热磁记录介质并降低其矫顽力和磁各向异性。 为了使TAMR头能够最有效地运行，磁记录场的最大梯度应该集中在被加热的小区域中。 通常这不会发生，因为被天线加热的点偏离磁极集中其磁场的位置。 本发明在等离子体激元天线内结合有磁芯，因此天线有效地成为磁极的延伸，并产生磁场，其最大梯度与在天线的磁芯周围的导电层中产生的边缘等离子体激元加热的区域重叠 。

公开(公告)号：US07657992B2

公开(公告)日：2010-02-09

申请号：US12001429

申请日：2007-12-11

申请人： Cherng-Chyi Han ,  Kenichi Takano

发明人： Cherng-Chyi Han ,  Kenichi Takano

IPC分类号： G11B5/11 ,  G11B5/17

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062

摘要： A method of making a perpendicular magnetic recording (PMR) head with single or double coil layers and with a small write shield stitched onto a main write shield. The stitched shield allows the main write pole to produce a vertical write field with sharp vertical gradients that is reduced on both sides of the write pole so that adjacent track erasures are eliminated. From a fabrication point of view, both the main pole and the stitched shield are defined and formed using a single photolithographic process, a trim mask and CMP lapping process so that the main shield can be stitched onto a self-aligned main pole and stitched shield.

摘要翻译： 一种制造具有单线圈或双线圈层的垂直磁记录（PMR）头和缝合在主写屏蔽上的小写保护层的方法。 拼接屏蔽允许主写柱产生垂直写入场，其尖锐的垂直梯度在写入极的两侧减小，从而消除相邻的轨迹擦除。 从制造的角度来看，使用单一光刻工艺，修剪掩模和CMP研磨工艺来限定和形成主极和缝合屏蔽物，使得主屏蔽可以缝合到自对准的主极和缝合屏蔽 。

公开(公告)号：US20080117552A1

公开(公告)日：2008-05-22

申请号：US11600380

申请日：2006-11-16

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kunliang Zhang

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kunliang Zhang

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T428/1107 ,  Y10T428/115

摘要： A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that is based on HB easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a conformal soft magnetic layer that may be a top shield contacts the HB layer to provide direct exchange coupling that compensates HB surface charges. Optionally, a thin capping layer on the HB layer enables magneto-static shield-HB coupling. After HB initialization, HB regions along the sensor sidewalls have magnetizations that are perpendicular to the sidewalls as a result of surface charges near the seed layer. Sidewalls may be extended into the substrate (bottom shield) to give enhanced protection against side reading. The top surface of the seed layer may be amorphous or crystalline to promote HB easy axis perpendicular growth.

摘要翻译： 公开了用于纵向偏置MR传感器中的自由层的硬偏置（HB）结构，其基于垂直于衬底上并且沿着传感器的两个侧壁形成的下层种子层的HB易轴生长。 在一个实施例中，可以是顶部屏蔽的共形软磁性层与HB层接触以提供补偿HB表面电荷的直接交换耦合。 可选地，HB层上的薄覆盖层可实现磁静电屏蔽-HB耦合。 在HB初始化之后，沿着传感器侧壁的HB区域由于种子层附近的表面电荷而具有垂直于侧壁的磁化。 侧壁可以延伸到基板（底部屏蔽）中，以提供更强的防侧读保护。 种子层的顶表面可以是无定形的或结晶的以促进HB易轴垂直生长。

公开(公告)号：US20080094759A1

公开(公告)日：2008-04-24

申请号：US12001429

申请日：2007-12-11

申请人： Cherng-Chyi Han ,  Kenichi Takano

发明人： Cherng-Chyi Han ,  Kenichi Takano

IPC分类号： G11B5/10

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062

摘要： A method of making a perpendicular magnetic recording (PMR) head with single or double coil layers and with a small write shield stitched onto a main write shield. The stitched shield allows the main write pole to produce a vertical write field with sharp vertical gradients that is reduced on both sides of the write pole so that adjacent track erasures are eliminated. From a fabrication point of view, both the main pole and the stitched shield are defined and formed using a single photolithographic process, a trim mask and CMP lapping process so that the main shield can be stitched onto a self-aligned main pole and stitched shield.

摘要翻译： 一种制造具有单线圈或双线圈层的垂直磁记录（PMR）头和缝合在主写屏蔽上的小写保护层的方法。 拼接屏蔽允许主写柱产生垂直写入场，其尖锐的垂直梯度在写入极的两侧减小，从而消除相邻的轨迹擦除。 从制造的角度来看，使用单一光刻工艺，修剪掩模和CMP研磨工艺来限定和形成主极和缝合屏蔽物，使得主屏蔽可以缝合到自对准的主极和缝合屏蔽 。

公开(公告)号：US07327532B2

公开(公告)日：2008-02-05

申请号：US10789097

申请日：2004-02-27

申请人： Kenichi Takano ,  Moris Dovek

发明人： Kenichi Takano ,  Moris Dovek

IPC分类号： G11B5/187

CPC分类号： G11B5/1274

摘要： To generate a high data transfer rate from a magnetic write head, a faster flux rise time is needed. This often brings about severe excess saturation of the head and, as a result, adjacent track erasures often occur. This problem has been overcome by dividing the bottom pole into front and rear sections with a step between them. The write gap is part of the front section while the rear section (to which the front section is attached) is closer to the top pole so excess flux generated by higher write currents can be absorbed in a direction normal to the ABS instead of being diverted to the bottom pole shoulder.

摘要翻译： 为了从磁写头产生高数据传输速率，需要更快的通量上升时间。 这通常会导致头部的严重过度饱和，因此经常发生相邻的轨迹擦除。 通过将底极分成前后两部分之间的台阶，已经克服了这个问题。 写入间隙是前部的一部分，而后部（前部附接到其上）更接近顶极，因此由较高写入电流产生的过量磁通可以沿着垂直于ABS的方向吸收，而不是被转向 到底极肩。

公开(公告)号：US07320167B2

公开(公告)日：2008-01-22

申请号：US11546146

申请日：2006-10-11

申请人： Kenichi Takano

发明人： Kenichi Takano

IPC分类号： G11B5/127

CPC分类号： G11B5/3912 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49046

摘要： It is necessary to stabilize the free layer of GMR or TMR devices by providing a longitudinal bias field. As read tracks become very narrow, this field can drastically reduce the strength of the output signal. This problem has been overcome by adding an additional, compensatory, bias layer. This layer is permanently magnetized in the same direction as the main bias magnet. Through control of the magnetization strength and location of the compensatory bias layer, cancellation of the field induced in the free layer, by the main bias layers, is achieved. A process for manufacturing the devices is also described.

摘要翻译： 需要通过提供纵向偏置场来稳定GMR或TMR器件的自由层。 随着读取轨迹变得非常窄，该领域可以显着降低输出信号的强度。 通过添加额外的补偿性偏置层已经克服了这个问题。 该层在与主偏置磁铁相同的方向上永久磁化。 通过控制补偿偏置层的磁化强度和位置，实现由主偏置层在自由层中感应的场的消除。 还描述了用于制造器件的工艺。

公开(公告)号：US07224220B2

公开(公告)日：2007-05-29

申请号：US10918904

申请日：2004-08-16

申请人： Hisao Kakitani ,  Kenichi Takano

发明人： Hisao Kakitani ,  Kenichi Takano

IPC分类号： H03F1/14 ,  H03F1/02

CPC分类号： H03G1/0088

摘要： An amplifier which comprises an operational amplifier, a semiconductor switch that selectively connects at least one circuit to an input terminal of the operational amplifier, and a device for virtual shorting of both terminals of the semiconductor switch in an isolated state.

摘要翻译： 一种放大器，包括运算放大器，选择性地将至少一个电路连接到运算放大器的输入端的半导体开关，以及用于在隔离状态下虚拟短路半导体开关的两个端子的装置。

公开(公告)号：US20050174686A1

公开(公告)日：2005-08-11

申请号：US10776813

申请日：2004-02-11

申请人： Kenichi Takano

发明人： Kenichi Takano

IPC分类号： G11B5/147 ,  G11B5/33

CPC分类号： G11B5/147 ,  G11B5/33

摘要： A planar top yoke in a magnetic write head is disclosed. The top yoke includes a backside region and a second pole tip region that is thinner than the backside region and forms a step at the ABS. Alternatively, a front section of the backside region includes a step with a thickness greater than the second pole tip region. Therefore, flux is directed from a thicker backside region toward the gap side of the second pole tip layer near the ABS. A lower flux density is formed at the top of the step at the ABS which reduces the flank field/gap field ratio and prevents unwanted erasure of adjacent data tracks. A high gap field is achieved while maintaining a low flank field during high write current conditions. The step recess from the ABS toward the backside region is about 0.2 to 2 microns.

摘要翻译： 公开了磁写头中的平面顶轭。 顶部磁轭包括背面区域和比背面区域薄的第二极尖端区域，并在ABS处形成台阶。 或者，背侧区域的前部包括具有大于第二极尖端区域的厚度的台阶。 因此，焊剂从较厚的背面区域朝向ABS附近的第二极尖端层的间隙侧引导。 在ABS的台阶顶部形成较低的通量密度，其降低了侧面场/间隙场比，并且防止相邻数据轨道的不必要的擦除。 在高写入电流条件期间，在保持低侧面场的同时实现高间隙场。 从ABS向后侧区域的台阶凹槽为约0.2至2微米。