Two phase flow sensor using tomography techniques
    92.
    发明授权
    Two phase flow sensor using tomography techniques 有权
    两相流量传感器采用断层扫描技术

    公开(公告)号:US06857323B1

    公开(公告)日:2005-02-22

    申请号:US10669065

    申请日:2003-09-23

    IPC分类号: G01F1/66 G01F1/74

    CPC分类号: G01F1/74 G01F1/667

    摘要: A method and system is presented for accurately measuring the two phase flow rate of a fluid mixture that includes two different phase components. Capacitance tomography measurements are made in order to determine the concentration ratio of the different phase components within the fluid. Approximate flow measurements are made by transmitting, for example, ultrasound waves through the fluid mixture, and measuring the different speeds of propagation of the ultrasound waves through the different phase components of the fluid mixture. The exact flow rate of the fluid mixture is determined using the concentration ratio obtained from the tomographic measurements, and the approximate flow measurements made, for example, by ultrasound sensing.

    摘要翻译: 提出了一种用于精确测量包括两个不同相分量的流体混合物的两相流速的方法和系统。 进行电容层析成像测量以确定流体内不同相分量的浓度比。 通过传输例如通过流体混合物的超声波以及测量超声波通过流体混合物的不同相分量的不同传播速度来进行近似流量测量。 使用从断层摄影测量获得的浓度比,以及例如通过超声波感测进行的近似流量测量来确定流体混合物的确切流速。

    System and method for determining stray light in a thermal processing system
    95.
    发明授权
    System and method for determining stray light in a thermal processing system 失效
    用于确定热处理系统中杂散光的系统和方法

    公开(公告)号:US06461036B1

    公开(公告)日:2002-10-08

    申请号:US09413131

    申请日:1999-10-06

    IPC分类号: G01N2500

    摘要: A system and method for determining the stray radiation within a heating chamber of a thermal processing apparatus. The stray radiation is determined by moving a generally unheated wafer vertically through the heating chamber, and measuring with a detector the amount of radiation reflected from the wafer at each vertical wafer position. The total measured radiation is then correlated with the stray radiation component of the total radiation.

    摘要翻译: 一种用于确定热处理装置的加热室内的杂散辐射的系统和方法。 通过将通常不加热的晶片垂直移动通过​​加热室来确定杂散辐射,并且用检测器测量在每个垂直晶片位置处从晶片反射的辐射量。 然后将总测量的辐射与总辐射的杂散辐射分量相关。

    System and method for the real time determination of the in situ emissivity of a workpiece during processing
    96.
    发明授权
    System and method for the real time determination of the in situ emissivity of a workpiece during processing 失效
    用于实时确定加工过程中工件的原位辐射率的系统和方法

    公开(公告)号:US06183127B2

    公开(公告)日:2001-02-06

    申请号:US09280308

    申请日:1999-03-29

    IPC分类号: G01N2500

    摘要: A system and method for determining the reflectivity of a workpiece during processing in a heating chamber of a thermal processing apparatus. The system first determines directly the reflectivity of the workpiece outside of the heating chamber of the thermal processing apparatus, and then determines the reflectivity of the workpiece during processing within the heating chamber of the thermal processing apparatus by correlating the ex situ wafer reflectivity with the intensity of the radiation reflected from the wafer within the heating chamber.

    摘要翻译: 一种用于在热处理装置的加热室中确定加工过程中工件的反射率的系统和方法。 该系统首先直接确定热处理装置的加热室外的工件的反射率,然后通过将非原位晶片的反射率与强度相关联来确定在热处理装置的加热室内的加工过程中工件的反射率 在加热室内从晶片反射的辐射。