公开(公告)号：US20050275922A1

公开(公告)日：2005-12-15

申请号：US10710050

申请日：2004-06-15

申请人： Brent Anderson ,  Edward Nowak

发明人： Brent Anderson ,  Edward Nowak

IPC分类号： G02F1/03 ,  G02F1/07 ,  G02F1/19

CPC分类号： G02F1/19 ,  G02F2201/16 ,  G02F2202/34 ,  H01L29/785

摘要： The invention relates to optical switching. Rapid, low-power optical switching is achieved by selectively substantially depleting majority carriers in a plurality of planes of semiconducting material to alter their transmissive response to incoming radiation.

摘要翻译： 本发明涉及光切换。 通过选择性地基本消耗半导体材料的多个平面中的多数载流子来改变其对入射辐射的透射响应来实现快速的低功率光开关。

公开(公告)号：US20050063620A1

公开(公告)日：2005-03-24

申请号：US10661684

申请日：2003-09-11

申请人： Brent Anderson

发明人： Brent Anderson

IPC分类号： A44B19/16 ,  B65D33/25 ,  B65D33/16

CPC分类号： B65D33/2541 ,  A44B19/16 ,  Y10T24/15 ,  Y10T24/2534

摘要： The present invention provides a zippered closure comprising a front zipper profile and a back zipper profile. The front and back zipper profiles each have a facing side and an attaching side. The front and back zipper profiles interlock along their facing sides. The facing side of at least one of the front and back zipper profiles is wider than its attaching side.

摘要翻译： 本发明提供了一种拉链封闭物，其包括前拉链型材和后拉链型材。 前后拉链轮廓均具有面对侧和附接侧。 前后拉链轮廓沿其相对侧互锁。 前后拉链轮廓中的至少一个的相对侧比其附接侧宽。

公开(公告)号：US20050009305A1

公开(公告)日：2005-01-13

申请号：US10604116

申请日：2003-06-26

申请人： Brent Anderson ,  Edward Nowak ,  BethAnn Rainey

发明人： Brent Anderson ,  Edward Nowak ,  BethAnn Rainey

IPC分类号： H01L20060101 ,  H01L21/20 ,  H01L21/324 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/04 ,  H01L29/786 ,  H01L31/036

CPC分类号： H01L21/02595 ,  H01L21/02667 ,  H01L21/2022 ,  H01L29/66795 ,  H01L29/785

摘要： A method of providing a freestanding semiconductor layer on a conventional SOI or bulk-substrate silicon device includes forming an amorphous or polycrystalline mandrel on a monocrystalline base structure. A conformal polycrystalline semiconductor layer is then formed on the mandrel and on the base structure, wherein the polycrystalline layer contacts the base structure. The polycrystalline semiconductor layer is then recrystallized so that it has a crystallinity substantially similar to that of the base structure. Thus, a freestanding semiconductor layer is formed with a high degree of control of the thickness and height thereof and maintaining a uniformity of thickness.

摘要翻译： 在传统的SOI或体衬底硅器件上提供独立半导体层的方法包括在单晶基底结构上形成非晶或多晶心轴。 然后在心轴和基底结构上形成共形多晶半导体层，其中多晶层接触基底结构。 然后将多晶半导体层重结晶，使其具有与基础结构基本相似的结晶度。 因此，以高度控制其厚度和高度的方式形成独立的半导体层并保持厚度的均匀性。

公开(公告)号：US08469591B2

公开(公告)日：2013-06-25

申请号：US11974766

申请日：2007-10-16

申请人： Brent Anderson

发明人： Brent Anderson

IPC分类号： B65D33/16

CPC分类号： B65D33/2541 ,  B31B70/8132 ,  B65D33/2591 ,  Y10T24/2534 ,  Y10T24/2596

摘要： The present invention provides a recloseable bag, the bag having a mouth and including a closure at the mouth, the closure having a first end and a second end. The recloseable bag also includes a first crushed section at the first end of the closure, the closure further including an intact portion. It also includes a first transition area between the first crushed section and the intact portion, and a sealing material in the first transition area.

摘要翻译： 本发明提供了一种可重新封闭的袋子，该袋子具有口部并且在口部包括封闭件，该封闭件具有第一端部和第二端部。 可再封闭袋还包括在封闭件的第一端处的第一破碎部分，封闭件还包括完整部分。 它还包括在第一破碎部分和完整部分之间的第一过渡区域和第一过渡区域中的密封材料。

公开(公告)号：US20100294789A1

公开(公告)日：2010-11-25

申请号：US12470114

申请日：2009-05-21

申请人： Brent Anderson ,  Matthew T. Hoots ,  Gregory S. Smith

发明人： Brent Anderson ,  Matthew T. Hoots ,  Gregory S. Smith

IPC分类号： A47G19/22

CPC分类号： A47G19/2272

摘要： An integrated straw and container. The container includes an interior bottom surface and defines an opening near an upper portion of the container. A cap can be placed onto the container to close the container, and then removed to open the container. The straw includes a shape that operates as a spring operates to create two states: a resting or expanded state and a compressed state. In the resting state of the straw, the overall distance from the first end to the second end is greater than the distance from the interior bottom surface of the container to the opening of the container. The straw is placed into the container and the container is sealed forcing the straw into a compressed state. Upon removal of the cap, the straw returns to a resting state in which the upper end protrudes from the container opening.

摘要翻译： 集成的秸秆和集装箱。 容器包括内部底部表面并且在容器的上部附近限定开口。 可以将盖子放在容器上以关闭容器，然后取出以打开容器。 吸管包括作为弹簧操作以形成两种状态的形状：静止或膨胀状态和压缩状态。 在吸管的静止状态下，从第一端到第二端的总体距离大于从容器的内部底面到容器开口的距离。 将吸管放入容器中，将容器密封，迫使吸管处于压缩状态。 在取下盖子时，吸管返回到上端从容器开口突出的静止状态。

公开(公告)号：US07674152B2

公开(公告)日：2010-03-09

申请号：US11072921

申请日：2005-03-03

申请人： Brent Anderson

发明人： Brent Anderson

IPC分类号： A63H3/06

CPC分类号： A63H27/10 ,  A63H2027/1008 ,  A63H2027/1058 ,  A63H2027/1091

摘要： The present invention provides a balloon weight system for an inflatable balloon having, singularly or in any combination, an electronic music producing device, a line distance adjusting device, to produce a descending and/or ascending of the balloon, and a fragrance distribution device.

摘要翻译： 本发明提供了一种用于充气气球的球囊重量系统，其具有单独地或以任何组合形成电子音乐产生装置，线距离调节装置，以产生气球的下降和/或上升，以及香料分配装置。

公开(公告)号：US07398953B2

公开(公告)日：2008-07-15

申请号：US11020380

申请日：2004-12-22

申请人： Brent Anderson

发明人： Brent Anderson

IPC分类号： F16K31/44

CPC分类号： B65D81/2038

摘要： The present invention provides a one way valve having a valve body, a wall, a fluid inlet, and a fluid outlet. The valve has a plunger which is moveable with respect to the valve body from a first position to a second position. The valve also has a diaphragm positioned in the valve body for movement between a third position and a fourth position when the plunger is in the first position. When the diaphragm is in the third position the fluid outlet is closed and when the diaphragm is in the fourth position the fluid outlet is open.

摘要翻译： 本发明提供一种具有阀体，壁，流体入口和流体出口的单向阀。 该阀具有可从第一位置到第二位置相对于阀体移动的柱塞。 阀还具有位于阀体中的隔膜，用于当柱塞处于第一位置时在第三位置和第四位置之间移动。 当隔膜处于第三位置时，流体出口关闭，当隔膜处于第四位置时，流体出口打开。

公开(公告)号：US20080096370A1

公开(公告)日：2008-04-24

申请号：US11955436

申请日：2007-12-13

申请人： Brent Anderson ,  John Ellis-Monaghan ,  Alain Loiseau ,  Kirk Peterson

发明人： Brent Anderson ,  John Ellis-Monaghan ,  Alain Loiseau ,  Kirk Peterson

IPC分类号： H01L21/20

CPC分类号： H01L21/823807 ,  H01L21/823878 ,  H01L21/8252

摘要： Disclosed is a method of manufacturing dual orientation wafers. A trench is formed in a multi-layer wafer to a silicon substrate with a first crystalline orientation. The trench is filled with a silicon material (e.g., amorphous silicon or polysilicon trench). Isolation structures are formed to isolate the silicon material in the trench from a semiconductor layer with a second crystalline orientation. Additional isolation structures are formed within the silicon material in the trench and within the semiconductor layer. A patterned amorphization process is performed on the silicon material in the trench and followed by a recrystallization anneal such that the silicon material in the trench recrystallizes with the same crystalline orientation as the silicon substrate. The resulting structure is a semiconductor wafer with isolated semiconductor areas on the same plane having different crystalline orientations as well as isolated sections within each semiconductor area for device formation.

摘要翻译： 公开了制造双取向晶片的方法。 在多层晶片中形成具有第一晶体取向的硅衬底的沟槽。 沟槽填充有硅材料（例如，非晶硅或多晶硅沟槽）。 形成隔离结构以将沟槽中的硅材料与具有第二晶体取向的半导体层隔离。 另外的隔离结构形成在沟槽内和半导体层内的硅材料内。 对沟槽中的硅材料进行图案化非晶化处理，然后进行再结晶退火，使得沟槽中的硅材料以与硅衬底相同的结晶取向重结晶。 所得到的结构是在具有不同晶体取向的同一平面上的隔离半导体区域以及用于器件形成的每个半导体区域内的隔离部分的半导体晶片。

公开(公告)号：US20080083951A1

公开(公告)日：2008-04-10

申请号：US11869766

申请日：2007-10-10

申请人： Brent Anderson ,  Andres Bryant ,  Edward Nowak ,  Richard Williams

发明人： Brent Anderson ,  Andres Bryant ,  Edward Nowak ,  Richard Williams

IPC分类号： H01L27/12

CPC分类号： H01L29/78612 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78648

摘要： Embodiments of the invention disclose a design structure for a FET with a shallow source/drain region, a deep channel region, a gate stack and a back gate that is surrounded by dielectric. The FET structure also includes halo or pocket implants that extend through the entire depth of the channel region. Because a portion of the halo and well doping of the channel is deeper than the source/drain depth, better threshold voltage and process control is achieved. A back-gated FET structure is also provided having a first dielectric layer in this structure that runs under the shallow source/drain region between the channel region and the back gate. This first dielectric layer extends from under the source/drain regions on either side of the back gate and is in contact with a second dielectric such that the back gate is bounded on each side or isolated by dielectric.

摘要翻译： 本发明的实施例公开了具有浅电源/漏极区域，深沟道区域，栅极叠层和被电介质包围的背栅的FET的设计结构。 FET结构还包括延伸通过通道区域的整个深度的晕或凹坑植入物。 因为沟道的一部分光晕和阱掺杂比源极/漏极深度更深，所以实现了更好的阈值电压和过程控制。 还提供了后栅化FET结构，其具有在该结构中的第一介电层，其在沟道区域和后栅极之间的浅源极/漏极区域下方延伸。 该第一电介质层从背栅的两侧的源极/漏极区下方延伸并与第二电介质接触，使得后栅极在每一侧上界定或通过电介质隔离。

公开(公告)号：US20080044112A1

公开(公告)日：2008-02-21

申请号：US11974766

申请日：2007-10-16

申请人： Brent Anderson

发明人： Brent Anderson

IPC分类号： B65D33/16 ,  B65D33/22

CPC分类号： B65D33/2541 ,  B31B70/8132 ,  B65D33/2591 ,  Y10T24/2534 ,  Y10T24/2596

摘要： The present invention provides a recloseable bag, the bag having a mouth and including a closure at the mouth, the closure having a first end and a second end. The recloseable bag also includes a first crushed section at the first end of the closure, the closure further including an intact portion. It also includes a first transition area between the first crushed section and the intact portion, and a sealing material in the first transition area.

摘要翻译： 本发明提供了一种可重新封闭的袋子，该袋子具有口部并且在口部包括封闭件，该封闭件具有第一端部和第二端部。 可再封闭袋还包括在封闭件的第一端处的第一破碎部分，封闭件还包括完整部分。 它还包括在第一破碎部分和完整部分之间的第一过渡区域和第一过渡区域中的密封材料。