Glasses
    91.
    外观设计
    Glasses 有权

    公开(公告)号:USD904501S1

    公开(公告)日:2020-12-08

    申请号:US29691404

    申请日:2019-05-16

    申请人: Qiang Chen

    设计人: Qiang Chen

    Image processing device, image processing method, image processing program, and integrated circuit
    94.
    发明授权
    Image processing device, image processing method, image processing program, and integrated circuit 有权
    图像处理装置,图像处理方法,图像处理程序和集成电路

    公开(公告)号:US08958646B2

    公开(公告)日:2015-02-17

    申请号:US13700241

    申请日:2012-04-04

    CPC分类号: G06K9/46 G11B27/034 H04N5/76

    摘要: An image processing device combines a plurality of contents (e.g. videos) with a story line retained as much as possible, while reducing view's discomfort. The image processing device compares one of the contents, which contains a first partial content and a second partial content subsequent to the first partial content, with another one of the contents, which contains a plurality of consecutive partial contents; detects, as a third partial content, a partial content with the highest similarity value from among the plurality of partial contents; and generates relational information by using the highest similarity value obtained by the first processing unit. The relational information is then used for merging the first partial content, the second partial content and the third partial content.

    摘要翻译: 图像处理装置将多个内容(例如视频)与尽可能保留的故事线相结合,同时减少视图的不适。 图像处理装置将包含第一部分内容和第一部分内容之后的第二部分内容的内容之一与包含多个连续部分内容的内容中的另一个进行比较; 从所述多个部分内容中检测具有最高相似度值的部分内容作为第三部分内容; 并且通过使用由第一处理单元获得的最高相似度值来生成关系信息。 关系信息然后用于合并第一部分内容,第二部分内容和第三部分内容。

    IMAGE RECOGNITION DEVICE, IMAGE RECOGNITION METHOD, AND INTEGRATED CIRCUIT
    96.
    发明申请
    IMAGE RECOGNITION DEVICE, IMAGE RECOGNITION METHOD, AND INTEGRATED CIRCUIT 有权
    图像识别装置,图像识别方法和集成电路

    公开(公告)号:US20140193074A1

    公开(公告)日:2014-07-10

    申请号:US13817631

    申请日:2012-08-29

    IPC分类号: G06T7/00

    摘要: An image recognition device that improves the accuracy of generic object recognition compared with conventional technologies by reducing the influence of the position, size, background clutter and the like of an object that is targeted to be recognized in the input image by the generic object recognition. The image recognition device performs a generic object recognition and includes: a segmenting unit configured to segment an input image into a plurality of regions in accordance with meanings extracted from content of the input image; a generating unit configured to compute feature data for each of the plurality of regions and generate feature data of the input image reflecting the computed feature data; and a checking unit configured to check whether or not a recognition-target object is present in the input image in accordance with the feature data of the input image.

    摘要翻译: 一种图像识别装置,通过减少通过通用对象识别在目标被识别的对象的位置,大小,背景杂波等对传统技术的准确性而提高通用对象识别的精度。 图像识别装置执行通用对象识别,包括:分割单元,被配置为根据从输入图像的内容中提取的含义将输入图像分割成多个区域; 生成单元,被配置为计算所述多个区域中的每一个的特征数据,并且生成反映所计算的特征数据的所述输入图像的特征数据; 以及检查单元,被配置为根据输入图像的特征数据来检查输入图像中是否存在识别对象物体。

    Pulse field assisted spin momentum transfer MRAM design
    97.
    发明授权
    Pulse field assisted spin momentum transfer MRAM design 有权
    脉冲场辅助自旋动量转移MRAM设计

    公开(公告)号:US08422287B2

    公开(公告)日:2013-04-16

    申请号:US12807611

    申请日:2010-09-09

    IPC分类号: G11C11/14

    摘要: An MRAM array structure and a method of its operation that is not subject to accidental writing on half-selected elements. Each element of the MRAM is an MTJ (magnetic tunneling junction) cell operating in accord with an STT (spin torque transfer) scheme for changing its free layer magnetization state and each cell is patterned to have a C-shape in the horizontal plane. The cell thereby operates by C-mode switching to provide stability against accidental writing by half-selection. During operation, switching of a cell's magnetization is accomplished with the assist of the pulsed magnetic fields of additional word lines that are formed either orthogonal to or parallel to the existing bit lines and that can carry currents in either direction as required to provide the assist.

    摘要翻译: MRAM阵列结构及其操作方法,不会在半选择元素上偶然写入。 MRAM的每个元件是根据用于改变其自由层磁化状态的STT(自旋转矩传递)方案操作的MTJ(磁性隧道结)单元,并且每个单元被图案化以在水平面中具有C形。 因此,电池通过C模式切换来操作,以通过半选择提供对意外写入的稳定性。 在操作期间,通过与现有位线正交或平行的附加字线的脉冲磁场的帮助来实现电池的磁化的切换,并且可以根据需要在任一方向上承载电流以提供辅助。

    Keyboard with adjustable top surface temperature function
    98.
    发明授权
    Keyboard with adjustable top surface temperature function 失效
    键盘具有可调顶面温度功能

    公开(公告)号:US08419221B2

    公开(公告)日:2013-04-16

    申请号:US12913794

    申请日:2010-10-28

    申请人: Qiang Chen

    发明人: Qiang Chen

    IPC分类号: F21V33/00 F21V29/00

    CPC分类号: G06F3/0202

    摘要: A keyboard includes a housing, which includes a front surface, a rear surface, and a top surface. The top surface has a key zone. A number of keys formed on the key zone. An air inlet is defined in the rear surface. A number of air outlets are defined in the key zone. A fan is received in the housing adjacent to the air inlet. The fan is configured for forcing air to flow into the housing through the air inlet. A heating element is positioned in the housing and configured to heat up the air in the housing. A switch is configured to switch on or off the heating element.

    摘要翻译: 键盘包括壳体,其包括前表面,后表面和顶表面。 顶面有一个关键区域。 键区上形成的一些键。 空气入口限定在后表面。 关键区域定义了多个出气口。 风扇容纳在与进气口相邻的壳体中。 风扇被配置为迫使空气通过进气口流入壳体。 加热元件定位在壳体中并且构造成加热壳体中的空气。 开关配置为打开或关闭加热元件。

    Method and layout of semiconductor device with reduced parasitics

    公开(公告)号:US07928481B2

    公开(公告)日:2011-04-19

    申请号:US11828944

    申请日:2007-07-26

    IPC分类号: H01L29/76

    摘要: An semiconductor device is disclosed. The device includes a semiconductor body, a layer of insulating material disposed over the semiconductor body, and a region of gate electrode material disposed over the layer of insulating material. Also included are a source region adjacent to gate region and a drain region adjacent to the gate region. A gate connection is disposed over the semiconductor body, wherein the gate connection includes a region of gate electrode material electrically coupling a contact region to the gate electrode. An insulating region is disposed on the semiconductor body beneath the gate connection.