公开(公告)号：US20190189795A1

公开(公告)日：2019-06-20

申请号：US16327728

申请日：2016-09-30

申请人： Intel Corporation

发明人： Aaron D. Lilak ,  Rishabh Mehandru ,  Patrick Morrow ,  Patrick H. Keys

IPC分类号： H01L29/78 ,  H01L21/304 ,  H01L21/762 ,  H01L21/768 ,  H01L21/78 ,  H01L29/66

CPC分类号： H01L29/785 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/762 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/78 ,  H01L29/66 ,  H01L29/66795

摘要： Methods and apparatus to remove epitaxial defects in semiconductors are disclosed. A disclosed example multilayered die structure includes a fin having a first material, where the fin is epitaxially grown from a first substrate layer having a second material, and where a defect portion of the fin is etched or polished. The disclosed example multilayered die structure also includes a second substrate layer having an opening through which the fin extends.